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1. 发明专利

JP2010147366A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010147366A
公开(公告)日：2010-07-01
申请号：JP2008325085
申请日：2008-12-22
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SHOJI TOMOYUKI , NISHIDA SHUICHI
IPC分类号： H01L29/78 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To provide such technology that suppresses effects due to impingement of cosmic rays, while controlling the increase in power loss.
SOLUTION: A semiconductor layer 30 of a semiconductor device 1 includes an n-type drift region 33 and p-type body region 34. The drift region 33 includes a high resistance lower drift region 33b, separated from a surface of pn junction with the body region 34. A depletion layer extended from the surface of the p-n junction to an inside of a drift region 33 is formed, in a state with the power off, and the lower drift region 33b is disposed outside the range to which the depletion layer is extended.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抑制由于宇宙射线的撞击引起的影响的技术，同时控制功率损耗的增加。解决方案：半导体器件1的半导体层30包括n型漂移区33和p型体区34.漂移区33包括与pn结的表面分离的高电阻下漂移区33b 与主体区域34形成。在断电的状态下，形成从pn结的表面向漂移区域33的内部延伸的耗尽层，下部漂移区域33b配置在耗尽层延长。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009152465A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2009152465A
公开(公告)日：2009-07-09
申请号：JP2007330404
申请日：2007-12-21
申请人： Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社豊田中央研究所
发明人： SHOJI TOMOYUKI , NISHIDA SHUICHI , ONISHI TOYOKAZU
IPC分类号： H01L29/739 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7397 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/0834 , H01L29/407 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To provide a technology to reduce the ON resistance (or ON voltage) in a vertical semiconductor device having a carrier shielding layer.
SOLUTION: A semiconductor substrate 20 of the semiconductor device 10 has a channel region 10A and a non-channel region 10B. A body region 25 of the channel region 10A includes an emitter region 26 which is in contact with a side surface of a trench gate 30 and electrically connected to an emitter electrode 28. The body region 25 of the non-channel region 10B includes no emitter region 26. The carrier shielding layer 52 is arranged in the non-channel region 10B and opens at least one part of the channel region 10A.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低具有载体屏蔽层的垂直半导体器件中的导通电阻（或导通电压）的技术。解决方案：半导体器件10的半导体衬底20具有沟道区10A和非沟道区10B。沟道区域10A的主体区域25包括与沟槽栅极30的侧表面接触并电连接到发射极电极28的发射极区域26.非沟道区域10B的主体区域25不包括发射极载体屏蔽层52布置在非沟道区域10B中并且打开沟道区域10A的至少一部分。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2010251614A Semiconductor module and method of manufacturing the same 审中-公开
标题翻译：半导体模块及其制造方法
公开(公告)号：JP2010251614A
公开(公告)日：2010-11-04
申请号：JP2009101258
申请日：2009-04-17
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： TOJO SATOSHI , NISHIDA SHUICHI , MATSUMOTO MASAHIRO , IKEGAMI KATSUYA , NOSE NOBORU
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L24/32
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor module that can improve adhesion between a housing of the semiconductor module and a heat sink in an easy manner, and the semiconductor module manufactured by the method. SOLUTION: The method of manufacturing the semiconductor module includes embedding the heat sink 5 in a lower portion of the housing 4 (Fig.1(a)), fixing a semiconductor chip 1 and a DBA substrate 3 on the heat sink 5 with solder 2 (Fig.1(b)), and filling the inside space enclosed by the housing 4 with a sealing material 6 (Fig.1(c)) to protect the semiconductor chip 1. Then a process of evacuating the housing 4 from the lower portion thereafter is further added (Fig.1(d)). Namely, suction from the lower portion of the housing 4 by a vacuum pump, etc., is carried out to fill the inside space with the sealing material 6 up to a junction between the housing 4 and heat sink 5. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体模块的方法，该半导体模块可以以简单的方式提高半导体模块的壳体和散热器之间的粘附性，以及通过该方法制造的半导体模块。解决方案：制造半导体模块的方法包括将散热器5嵌入壳体4的下部（图1（a）），将半导体芯片1和DBA基板3固定在散热器5上使用焊料2（图1（b）），并用密封材料6（图1（c））填充由壳体4包围的内部空间，以保护半导体芯片1.然后，将壳体4 从其后的下部进一步添加（图1（d））。即，通过真空泵等从壳体4的下部进行抽吸，以将密封材料6填充到内部空间，直到壳体4和散热器5之间的接合点。版权所有：（C）2011，JPO＆INPIT

4. 发明专利

JP2010091333A Device for testing temperature change in semiconductor chip 审中-公开
标题翻译：用于测试半导体芯片温度变化的器件
公开(公告)号：JP2010091333A
公开(公告)日：2010-04-22
申请号：JP2008259897
申请日：2008-10-06
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： NISHIDA SHUICHI , NOSE NOBORU , TOJO SATOSHI , MATSUMOTO MASAHIRO , IKEGAMI KATSUYA
IPC分类号： G01R31/26
摘要： PROBLEM TO BE SOLVED: To provide a device for testing temperature change which can suitably perform a test for temperature change in a semiconductor chip. SOLUTION: The device 10 for testing the temperature change semiconductor chip includes: a vacuum pipe 12, which can contact the semiconductor chip at least three points and wherein communication holes 12d for making the inside and the outside of the pipe communicate with each other are formed at these points of contact; a suction means 18 which sucks gas in the vacuum pipe 12; a high-temperature pipe 14 which is provided, at a position that approaches the semiconductor chip, when the chip comes into contact with the vacuum pipe 12; a first circulation means 20 which circulates a liquid inside the high-temperature pipe 14; a low-temperature pipe 16 which is provided, at a position approaching the semiconductor chip, when the chip comes into contact with the vacuum pipe 12; and a second circulation means 22, which makes a liquid having a temperature lower than that in the high-temperature pipe 14 circulate, inside the low-temperature pipe 16. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测试温度变化的装置，其可以适当地进行半导体芯片中的温度变化的测试。解决方案：用于测试温度变化半导体芯片的装置10包括：真空管12，其可以与至少三个点接触半导体芯片，并且其中用于使管内部和外部的连通孔12d与每个其他形成在这些接触点处; 吸入真空管12中的气体的抽吸装置18; 当芯片与真空管12接触时，设置在接近半导体芯片的位置处的高温管14; 第一循环装置20，其使高温管14内的液体循环; 当芯片与真空管12接触时，设置在接近半导体芯片的位置处的低温管16; 以及第二循环装置22，其使具有低于高温管14中的温度的液体循环的第二循环装置22在低温管16的内部。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010258233A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2010258233A
公开(公告)日：2010-11-11
申请号：JP2009106917
申请日：2009-04-24
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： NAKAJIMA KIYOFUMI , NISHIDA SHUICHI , SHOJI TOMOYUKI , YAGI YUJI , WADA KENSUKE
IPC分类号： H01L27/06 , H01L21/822 , H01L21/8234 , H01L23/40 , H01L27/04 , H01L27/088 , H01L29/739 , H01L29/78
CPC分类号： H01L2224/32225 , H01L2224/48091 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To simply and accurately detect occurrence of cracks in a semiconductor device and to make control according to detection results. SOLUTION: A semiconductor device is provided with the semiconductor device which is bonded to a substrate in a metal joint. In the peripheral region of the semiconductor device, a thermistor element 160 in which an electric resistance changes according to a temperature is provided, and is connected to a control electrode 122 of a transistor element 120. When there occurs abnormal heat generation due to cracks in the joint, the resistance of the thermistor element 160 changes to control the operation state of the transistor element 120. The operation of the semiconductor device is stopped thereby at an abnormal temperature. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：简单且准确地检测半导体装置中的裂纹的发生，并根据检测结果进行控制。解决方案：半导体器件设置有在金属接头中结合到基板的半导体器件。在半导体器件的周边区域中，设置有电阻根据温度变化的热敏电阻元件160，并连接到晶体管元件120的控制电极122.当发生由于裂纹引起的异常发热接头时，热敏电阻元件160的电阻改变以控制晶体管元件120的工作状态。半导体器件的操作停止在异常温度。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010091334A Irradiation test method for semiconductor device 有权
标题翻译：半导体器件的辐照测试方法
公开(公告)号：JP2010091334A
公开(公告)日：2010-04-22
申请号：JP2008259898
申请日：2008-10-06
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： NISHIDA SHUICHI
IPC分类号： G01N17/00 , G01R31/26
摘要： PROBLEM TO BE SOLVED: To provide an irradiation test method capable of more efficiently performing an irradiation test for a semiconductor device. SOLUTION: The irradiation test method for a semiconductor device 10 includes disposing a plurality of semiconductor devices 10 at overlapping positions, as viewed from one direction 50; and delivering irradiation along the one direction 50, at such an intensity as to penetrate all of the plurality of semiconductor devices 10. Irradiation can be carried out to the plurality of semiconductor devices 10 in one sitting, and irradiation test can be implemented efficiently. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够更有效地进行半导体装置的照射试验的照射试验方法。解决方案：半导体器件10的照射测试方法包括：从一个方向50观察重叠位置处的多个半导体器件10; 并沿着一个方向传送辐射，以能够穿透所有多个半导体器件10的强度。一次可以对多个半导体器件10进行照射，并且可以有效地实现照射测试。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010133852A Cold and hot impact testing machine and method for cold and hot impact testing 审中-公开
标题翻译：冷和热冲击试验机和冷热冲击试验方法
公开(公告)号：JP2010133852A
公开(公告)日：2010-06-17
申请号：JP2008311028
申请日：2008-12-05
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： TOJO SATOSHI , IKEGAMI KATSUYA , NOSE NOBORU , NISHIDA SHUICHI , MATSUMOTO MASAHIRO
IPC分类号： G01N3/60
摘要： PROBLEM TO BE SOLVED: To provide a cold and hot impact testing machine and a method for cold and hot impact testing, capable of preventing samples from dispersing even if powerful cold blast and hot blast are supplied, while suppressing an increase of the cost to the minimum.
SOLUTION: The cold and hot impact testing machine 100, which applies high-temperature and low-temperature cold impacts to a sample, includes: an input means 24 for inputting a condition temperature of high and low temperatures; a hot blast supplying means 21 for supplying the hot blast whose temperature is adjusted to the high temperature of the condition temperature; a cold blast supplying means 22 for supplying the cold blast whose temperature is adjusted to the low temperature of the condition temperature; a first test tank 1 equipped with a supply port for supplying the cold blast and the hot blast; a second test tank 2 which is disposed in the first test tank 1 in a nested fashion and has an openable/closable slit 18 at a position where the cold blast and the hot blast are blocked by a chassis 12; a temperature sensor 15 for detecting a temperature of the second test tank 2; and an aperture control means 31 which brings the slit 18 being in its closed state to open so as to have a prescribed aperture A, when the temperature reaches a first reference temperature, and which brings the slit 18 to open so as to have an aperture B larger than the aperture A, when the temperature reaches a second reference temperature.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种冷热冲击试验机和一种用于冷热冲击试验的方法，即使提供强力的冷风和热风也能防止样品分散，同时抑制成本降至最低。解决方案：对样品进行高温和低温冷冲击的冷热冲击试验机100包括：用于输入高低温条件温度的输入装置24; 用于将温度调节到条件温度的高温的热风提供的热风供给装置21; 用于将温度调节到条件温度的低温的冷风供应的冷风供给装置22; 配备有用于供应冷风和热风的供应口的第一测试槽1; 第二测试槽2以嵌套的方式设置在第一测试槽1中，并且在冷风和热风由底盘12阻挡的位置处具有可开闭的狭缝18; 用于检测第二试验箱2的温度的温度传感器15; 以及当温度达到第一基准温度时使狭缝18处于其闭合状态以打开以便具有规定孔径A的孔径控制装置31，并且使狭缝18打开以具有孔径 B大于孔径A，当温度达到第二参考温度时。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2007202280A Inspection method and inspection device of inverter module 有权
标题翻译：逆变器模块检测方法和检测装置
公开(公告)号：JP2007202280A
公开(公告)日：2007-08-09
申请号：JP2006016929
申请日：2006-01-25
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： NISHIDA SHUICHI , TAGAMI RYUZO , HIROSE SATOSHI
IPC分类号： H02M7/48 , G01R31/00
摘要： PROBLEM TO BE SOLVED: To detect an inherent fault that is caused when a plurality of switching elements and a plurality of diodes are combined to form an inverter module. SOLUTION: In an inspection method of this invention, an inductor load is connected to two or more P-side switching elements selected out of a group of P-side switching elements or to two or more N-side switching elements selected out of a group of N-side switching elements (S12). Then, short pulse signals are inputted one by one to each control terminal of a plurality of the switching elements to which the induction load is connected (S14) to measure an output signal outputted from each switching element (S16). Then, whether or not the measured output signals are oscillating is judged (S18). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：检测当组合多个开关元件和多个二极管以形成逆变器模块时引起的固有故障。解决方案：在本发明的检查方法中，电感器负载连接到从一组P侧开关元件中选择的两个或更多个P侧开关元件或者选择出的两个或更多个N侧开关元件的一组N侧开关元件（S12）。然后，将短脉冲信号逐个输入到与感应负载连接的多个开关元件的各个控制端子（S14），以测量从各开关元件输出的输出信号（S16）。然后，判定所测量的输出信号是否振荡（S18）。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2010067821A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010067821A
公开(公告)日：2010-03-25
申请号：JP2008233239
申请日：2008-09-11
申请人： Toyota Motor Corp , トヨタ自動車株式会社
发明人： TOJO SATOSHI , IKEGAMI KATSUYA , NISHIDA SHUICHI , MATSUMOTO MASAHIRO , NOSE NOBORU
IPC分类号： H01L21/316 , H01L23/29 , H01L23/31
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a passivation film which is hardly deteriorated in humidity resistance and has high versatility.
SOLUTION: The method of manufacturing the semiconductor device includes steps of forming a first passivation film 16 on a substrate, generating a crack in the first passivation film 16, and forming a second passivation film 18 on the first passivation film 16 in which the crack is generated.
COPYRIGHT: (C)2010,JPO&INPIT

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