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1. 发明申请

US20050059373A1 Frequency generator and communication system using the same 失效
标题翻译：频率发生器和通信系统使用相同
公开(公告)号：US20050059373A1
公开(公告)日：2005-03-17
申请号：US10901966
申请日：2004-07-30
申请人： Takahiro Nakamura , Kenichi Ohhata , Toru Masuda
发明人： Takahiro Nakamura , Kenichi Ohhata , Toru Masuda
IPC分类号： H03B5/04 , H03B5/12 , H03F1/30 , H03F3/343 , H03F3/345 , H03F3/45 , H03F3/50 , H04B1/26 , H04B1/16 , H04B1/06 , H04B7/00
CPC分类号： H03F3/345 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1231 , H03B5/1243 , H03F1/30 , H03F3/3435 , H03F3/4508 , H03F3/50 , H03F2200/372 , H03F2203/45264
摘要： A frequency generator which can perform stable frequency oscillation unaffected by temperature variation. A frequency generator having a differential amplifier (1) having an LC resonance circuit (10) as a load and buffer circuits (21, 22) feeding back an output of the differential amplifier to its input, wherein a temperature coefficient converter (5) converting an output voltage of a reference voltage generator (4) and its temperature dependence to a voltage having a predetermined voltage and temperature coefficient and outputting it is provided to control bias currents IEF of emitter follower circuits to be in proportion to temperature variation. There are a characteristic in which delay time of the emitter follower circuits constructing the buffer circuits is in inverse proportion to a transconductance of transistors and a characteristic in which the transconductance is in inverse proportion to temperature and is in proportion to the bias currents IEF. An oscillation frequency stable to temperature variation can be obtained.
摘要翻译：频率发生器，可以进行不受温度变化影响的稳定频率振荡。一种频率发生器，具有作为负载的LC谐振电路（10）的差分放大器（1）和将差分放大器的输出反馈到其输入端的缓冲电路（21,22），其中温度系数转换器（5）转换参考电压发生器（4）的输出电压及其与具有预定电压和温度系数的电压的温度依赖性并输出，以将射极跟随器电路的偏置电流IEF控制为与温度变化成比例。构成缓冲电路的射极跟随器电路的延迟时间与晶体管的跨导成反比的特性以及跨导与温度成反比并与偏置电流IEF成比例的特性。可以得到温度变化稳定的振荡频率。

2. 发明授权

US07177612B2 Frequency generator and communication system using the same 失效
标题翻译：频率发生器和通信系统使用相同
公开(公告)号：US07177612B2
公开(公告)日：2007-02-13
申请号：US10901966
申请日：2004-07-30
申请人： Takahiro Nakamura , Kenichi Ohhata , Toru Masuda
发明人： Takahiro Nakamura , Kenichi Ohhata , Toru Masuda
IPC分类号： H04B7/00 , H04B1/18 , H04B1/16
CPC分类号： H03F3/345 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1231 , H03B5/1243 , H03F1/30 , H03F3/3435 , H03F3/4508 , H03F3/50 , H03F2200/372 , H03F2203/45264
摘要： A frequency generator which can perform stable frequency oscillation unaffected by temperature variation.A frequency generator having a differential amplifier (1) having an LC resonance circuit (10) as a load and buffer circuits (21, 22) feeding back an output of the differential amplifier to its input, wherein a temperature coefficient converter (5) converting an output voltage of a reference voltage generator (4) and its temperature dependence to a voltage having a predetermined voltage and temperature coefficient and outputting it is provided to control bias currents IEF of emitter follower circuits to be in proportion to temperature variation. There are a characteristic in which delay time of the emitter follower circuits constructing the buffer circuits is in inverse proportion to a transconductance of transistors and a characteristic in which the transconductance is in inverse proportion to temperature and is in proportion to the bias currents IEF. An oscillation frequency stable to temperature variation can be obtained.
摘要翻译：频率发生器，可以进行不受温度变化影响的稳定频率振荡。一种频率发生器，具有作为负载的LC谐振电路（10）的差分放大器（1）和将差分放大器的输出反馈到其输入端的缓冲电路（21,22），其中温度系数转换器（5）转换参考电压发生器（4）的输出电压及其与具有预定电压和温度系数的电压的温度依赖性并输出，以将射极跟随器电路的偏置电流IEF控制为与温度变化成比例。构成缓冲电路的射极跟随器电路的延迟时间与晶体管的跨导成反比的特性以及跨导与温度成反比并与偏置电流IEF成比例的特性。可以得到温度变化稳定的振荡频率。

3. 发明授权

US06658217B2 Optical receiver 失效
公开(公告)号：US06658217B2
公开(公告)日：2003-12-02
申请号：US09946450
申请日：2001-09-06
申请人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
发明人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H04B10/6933 , H04B10/695
摘要： An optical receiver generates a voltage signal having a predetermined swing from a current signal, and feeds the voltage signal to a decision circuit. An optical receiving element receives the input optical signal, converts the optical signal to a current signal, and provides the current signal to a preamplifier, which converts the input current signal into a voltage signal. The voltage signal is input to an amplifier having a limiting function, which linearly amplifies the voltage signal when the swing of the voltage signal is smaller than a predetermined value, and limitedly amplifies the voltage signal when the voltage signal is greater than the predetermined value. An automatic-gain-control amplifier receives the output from the amplifier with the limiting function, and amplifies the input voltage signal to a voltage signal having a constant swing. The decision circuit receives the output of the automatic-gain-control amplifier and decides the binary nature of the voltage, and thus of the input optical signal.

4. 发明授权

US5402377A Semiconductor memory device having a controlled auxiliary decoder 失效
标题翻译：具有受控辅助解码器的半导体存储器件
公开(公告)号：US5402377A
公开(公告)日：1995-03-28
申请号：US243908
申请日：1994-05-17
申请人： Kenichi Ohhata , Hiroaki Nambu , Kazuo Kanetani , Youji Idei , Takeshi Kusunoki , Toru Masuda
发明人： Kenichi Ohhata , Hiroaki Nambu , Kazuo Kanetani , Youji Idei , Takeshi Kusunoki , Toru Masuda
IPC分类号： G11C29/00 , G11C29/04 , G11C8/00
CPC分类号： G11C29/70
摘要： A semiconductor memory device has a primary memory cell array, a primary decoder having a first circuit producing an intermediate signal from an address signal and a second circuit producing a first cell selection signal from the intermediate signal for selectively driving a word line and a bit line, an auxiliary memory cell array having a plurality of memory cells, each being used for a defective memory cell found in the primary memory cell array, an auxiliary decoder connected to the primary decoder to receive the intermediate signal, a non-volatile memory for storing first information indicating that the primary memory cell array contains a defective memory cell from which a cell defect signal is produced and for storing second information indicating an address of the defective memory cell from which a defective cell address signal is produced, and a control circuit responsive to the cell defect signal and the defective cell address signal for producing a first control signal to be supplied to the second circuit and a second control signal to be supplied to the auxiliary decoder. The primary decoder is prohibited by the first control signal from accessing a defective memory cell having an address represented by the defective cell address signal. The auxiliary decoder produces a second cell selection signal from the intermediate signal under control of the second control signal and of the cell defect signal for selectively accessing a memory cell in the auxiliary memory cell array.
摘要翻译：半导体存储器件具有主存储单元阵列，主解码器具有产生来自地址信号的中间信号的第一电路和从该中间信号产生第一单元选择信号的第二电路，用于选择性地驱动字线和位线，具有多个存储单元的辅助存储单元阵列，每个存储单元用于存储在主存储单元阵列中的缺陷存储单元，连接到主解码器以接收中间信号的辅助解码器，用于存储的非易失性存储器指示主存储单元阵列包含产生单元缺陷信号的缺陷存储单元的第一信息，以及用于存储表示产生有缺陷单元地址信号的缺陷存储单元的地址的第二信息，以及响应于控制电路的控制电路到单元缺陷信号和用于产生第一控制信号的有缺陷单元地址信号提供给第二电路和第二控制信号以提供给辅助解码器。主解码器被第一控制信号禁止访问具有由缺陷单元地址信号表示的地址的有缺陷的存储单元。辅助解码器在第二控制信号和单元缺陷信号的控制下，从中间信号产生第二单元选择信号，用于选择性地访问辅助存储单元阵列中的存储单元。

5. 发明授权

US06304357B1 Optical receiver 失效
标题翻译：光接收机
公开(公告)号：US06304357B1
公开(公告)日：2001-10-16
申请号：US09041973
申请日：1998-03-13
申请人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
发明人： Kenichi Ohhata , Ryoji Takeyari , Toru Masuda , Katsuyoshi Washio , Yasushi Hatta
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H04B10/6933 , H04B10/695
摘要： An optical receiver generates a voltage signal having a predetermined swing from a current signal, and feeds the voltage signal to a decision circuit. An optical receiving element receives the input optical signal, converts the optical signal to a current signal, and provides the current signal to a preamplifier, which converts the input current signal into a voltage signal. The voltage signal is input to an amplifier having a limiting function, which linearly amplifies the voltage signal when the swing of the voltage signal is smaller than a predetermined value, and limitedly amplifies the voltage signal when the voltage signal is greater than the predetermined value. An automatic-gain-control amplifier receives the output from the amplifier with the limiting function, and amplifies the input voltage signal to a voltage signal having a constant swing. The decision circuit receives the output of the automatic-gain-control amplifier and decides the binary nature of the voltage, and thus of the input optical signal.
摘要翻译：光接收器从电流信号产生具有预定摆幅的电压信号，并将电压信号馈送到判定电路。光接收元件接收输入光信号，将光信号转换为电流信号，并将电流信号提供给前置放大器，将前置放大器转换成电压信号。电压信号被输入到具有限制功能的放大器，当电压信号的摆动小于预定值时线性放大电压信号，并且当电压信号大于预定值时有限地放大电压信号。自动增益控制放大器以限制功能接收来自放大器的输出，并将输入电压信号放大到具有恒定摆幅的电压信号。决定电路接收自动增益控制放大器的输出，并确定电压的二进制特性，从而确定输入光信号的二进制特性。

6. 发明授权

US06785477B1 Optical receiver using variable negative-capacitance circuit 失效
标题翻译：光接收机采用可变负电容电路
公开(公告)号：US06785477B1
公开(公告)日：2004-08-31
申请号：US09646509
申请日：2000-09-19
申请人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
发明人： Toru Masuda , Katsuyoshi Washio , Taizo Yoshikawa , Eiji Ohue , Kenichi Ohhata
IPC分类号： H04B1006
CPC分类号： H04B10/6932 , H03F3/08 , H03F3/082 , H03F3/343 , H03F3/3432 , H03F3/345 , H04B10/6931
摘要： A large time constant is caused due to parasitic capacitance at an anode terminal of a photodetector of an optical receiver. Therefore, an optical receiver wherein a variable negative capacitor mainly including an NPN-type transistor operable at high speed is configured and is connected to the input terminal of a preamplifier to which the output of the photodetector is input so that parasitic capacitance caused in the photodetector and due to packaging is equivalently reduced and the fluctuation of parasitic capacitance caused due to manufacturing dispersion is also compensated is provided.
摘要翻译：由于光接收器的光电检测器的阳极端子处的寄生电容引起大的时间常数。因此，其中主要包括以高速工作的NPN型晶体管的可变负电容器的光接收器被配置并连接到前置放大器的输入端子，输入光电检测器的输出端，使得在光电探测器中产生的寄生电容并且由于封装等效地减少，并且还补偿了由于制造分散引起的寄生电容的波动。

7. 发明授权

US5523966A Memory cell and a memory device having reduced soft error 失效
标题翻译：存储单元和具有降低的软错误的存储器件
公开(公告)号：US5523966A
公开(公告)日：1996-06-04
申请号：US530421
申请日：1995-09-18
申请人： Youji Idei , Hiroaki Nambu , Kazuo Kanetani , Toru Masuda , Kunihiko Yamaguchi , Kenichi Ohhata , Takeshi Kusunoki
发明人： Youji Idei , Hiroaki Nambu , Kazuo Kanetani , Toru Masuda , Kunihiko Yamaguchi , Kenichi Ohhata , Takeshi Kusunoki
IPC分类号： G11C11/41 , G11C11/412 , H01L21/8244 , H01L27/11 , G11C11/00
CPC分类号： G11C11/4125 , H01L27/11 , H01L27/1104
摘要： Disclosed is a static type memory cell with high immunity from alpha ray-induced soft errors. The memory cell has a coupling capacitance C.sub.c between two data storage nodes 1 and 2. The p-well (or p-substrate) in which the driver-MOS transistors MN3, MN4 and the transfer MOS transistors MN1, MN2 are formed is connected to a V.sub.bb generator. The voltage V.sub.bb is set lower than the low level V.sub.L of the memory cell signal potential. Even when the potential variation .DELTA.V.sub.L of the low-voltage side node 2 is large, the parasitic diode present between the n-type diffusion layer corresponding to the source or drain of MN1-MN4 and the p-well (or p-substrate) does not turn on. Erroneous operations can therefore be prevented.
摘要翻译：公开了一种具有高抗α射线诱导的软错误免疫力的静态型记忆体。存储单元在两个数据存储节点1和2之间具有耦合电容Cc。其中形成驱动器MOS晶体管MN3，MN4和传输MOS晶体管MN1，MN2的p阱（或p衬底）连接到一个Vbb发生器。电压Vbb被设定为低于存储单元信号电位的低电平VL。即使当低电压侧节点2的电位变化量DELTA VL大时，存在于与MN1-MN4的源极或漏极对应的n型扩散层与p阱（或p-衬底）之间的寄生二极管，不打开因此可以防止错误的操作。

8. 发明授权

US08121579B2 Active mixer circuit and a receiver circuit or a millimeter-wave communication unit using it 有权
标题翻译：有源混频器电路和接收器电路或使用它的毫米波通信单元
公开(公告)号：US08121579B2
公开(公告)日：2012-02-21
申请号：US12370159
申请日：2009-02-12
申请人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
发明人： Nobuhiro Shiramizu , Toru Masuda , Takahiro Nakamura , Katsuyoshi Washio , Masamichi Tanabe
IPC分类号： H04B1/16 , H04B1/26 , H03D7/16
CPC分类号： H04B1/28 , H03D7/1433 , H03D7/1441 , H03D7/1458 , H03D2200/0023 , H03D2200/0043
摘要： The present invention provides a semiconductor integrated circuit including an active mixer circuit that is operated at low voltage, low noise, and low power consumption. It includes a transconductance amplifier, a transformer, and a multiplier, connects a transformer between the transconductance amplifier and the multiplier, and separates between the transconductance amplifier and the multiplier with respect to direct current inside the transformer. Further, each of the tranconductance amplifier and the multiplier is configured of transistors that are single-stacked between the supply voltage terminal and ground terminal.
摘要翻译：本发明提供一种半导体集成电路，包括以低电压，低噪声和低功耗工作的有源混频器电路。它包括跨导放大器，变压器和乘法器，连接跨导放大器和乘法器之间的变压器，并且相对于变压器内部的直流电流在跨导放大器和乘法器之间分离。此外，跨导放大器和乘法器中的每一个由在电源电压端子和接地端子之间单层堆叠的晶体管构成。

9. 发明授权

US07642618B2 Semiconductor devices with inductors 有权
标题翻译：具有电感器的半导体器件
公开(公告)号：US07642618B2
公开(公告)日：2010-01-05
申请号：US11183800
申请日：2005-07-19
申请人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
发明人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
IPC分类号： H01L27/00 , H01F27/28
CPC分类号： H01L23/5227 , H01F17/0006 , H01L2924/0002 , H01L2924/3011 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B5/1271 , H01L2924/00
摘要： Semiconductor devices are provided with high performance high-frequency circuits in which interference caused by inductors is reduced. In a semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.
摘要翻译：半导体器件设置有由电感器引起的干扰减小的高性能高频电路。在包括通过基带信号调制载波以调制RF信号的调制器电路以及解调器电路的半导体器件中，通过使用载波来解调RF信号以获得基带信号和本地振荡器以产生采用载波，分别具有闭环线的电感器。通过闭环线减少互感造成的干扰。例如，在调制器电路中采用电感器的情况下，围绕电感器的外周设置闭环线。

10. 发明申请

US20060038621A1 Semiconductor devices with inductors 有权
标题翻译：具有电感器的半导体器件
公开(公告)号：US20060038621A1
公开(公告)日：2006-02-23
申请号：US11183800
申请日：2005-07-19
申请人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
发明人： Nobuhiro Shiramizu , Takahiro Nakamura , Toru Masuda , Nobuhiro Kasa , Hiroshi Mori
IPC分类号： H03J7/02
CPC分类号： H01L23/5227 , H01F17/0006 , H01L2924/0002 , H01L2924/3011 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B5/1271 , H01L2924/00
摘要： Semiconductor devices provided with high performance high-frequency circuits that reduce interference caused by inductors are provided. In the semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.
摘要翻译：提供了具有降低由电感器引起的干扰的高性能高频电路的半导体器件。在包括通过基带信号调制载波以调制RF信号的调制器电路和解调器电路的半导体器件中，通过使用载波来解调RF信号以获得基带信号和本地振荡器以产生采用载波，分别具有闭环线的电感器。通过闭环线减少互感造成的干扰。例如，在调制器电路中采用电感器的情况下，围绕电感器的外周设置闭环线。

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