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1. 发明授权

US07459392B2 Noble metal barrier and seed layer for semiconductors 有权
标题翻译：贵金属屏障和半导体种子层
公开(公告)号：US07459392B2
公开(公告)日：2008-12-02
申请号：US11096345
申请日：2005-03-31
申请人： Steven W. Johnston , Juan E. Dominguez , Michael L. McSwiney
发明人： Steven W. Johnston , Juan E. Dominguez , Michael L. McSwiney
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76871
摘要： A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region between the barrier and noble metal layers to prevent oxidation of the barrier layer.
摘要翻译：描述了用于半导体镶嵌工艺的阻挡层和籽晶层。种子层由贵金属形成，在阻挡层和贵金属层之间具有中间区域，以防止阻挡层氧化。

2. 发明授权

US07435679B2 Alloyed underlayer for microelectronic interconnects 有权
标题翻译：用于微电子互连的合金底层
公开(公告)号：US07435679B2
公开(公告)日：2008-10-14
申请号：US11006844
申请日：2004-12-07
申请人： Steven W. Johnston , Juan E. Dominguez
发明人： Steven W. Johnston , Juan E. Dominguez
IPC分类号： H01L21/44
CPC分类号： H01L21/76808 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76858 , H01L23/5226 , H01L23/53238 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during thermal post-treatment, such as thermal annealing, conducted after two separately depositing the noble metal and the barrier material, which are substantially soluble in one another. The use of a barrier material within the underlayer prevents the electromigration of the interconnect conductive material and the use of noble material within the underlayer allows for the direct plating of the interconnect conductive material.
摘要翻译：制造具有作为阻挡层和种子层两者的底层的微电子互连的装置和方法。底层是通过共沉积贵金属和诸如难熔金属的阻挡材料形成的，或者在热后处理之后形成，例如热退火，在两个分开沉积贵金属和阻挡材料之后进行彼此基本溶解。在底层内使用阻挡材料防止互连导电材料的电迁移，并且在底层内使用贵金属允许互连导电材料的直接电镀。

3. 发明授权

US07550385B2 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US07550385B2
公开(公告)日：2009-06-23
申请号：US11240005
申请日：2005-09-30
申请人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
发明人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

4. 发明授权

US08344352B2 Using unstable nitrides to form semiconductor structures 有权
标题翻译：使用不稳定的氮化物形成半导体结构
公开(公告)号：US08344352B2
公开(公告)日：2013-01-01
申请号：US13185094
申请日：2011-07-18
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

5. 发明申请

US20100022083A1 CARBON NANOTUBE INTERCONNECT STRUCTURES 审中-公开
标题翻译：碳纳米管互连结构
公开(公告)号：US20100022083A1
公开(公告)日：2010-01-28
申请号：US12548779
申请日：2009-08-27
申请人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
发明人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76838 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/75 , H01L2924/00
摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.
摘要翻译：一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

6. 发明申请

US20080045013A1 Iridium encased metal interconnects for integrated circuit applications 审中-公开
标题翻译：铱壳金属互连用于集成电路应用
公开(公告)号：US20080045013A1
公开(公告)日：2008-02-21
申请号：US11506358
申请日：2006-08-18
申请人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka , Ting Zhong , Eric Dickey , Bill Barrow
发明人： Adrien R. Lavoie , John J. Plombon , Juan E. Dominguez , Joseph H. Han , Harsono S. Simka , Ting Zhong , Eric Dickey , Bill Barrow
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An iridium encased copper interconnect comprises an iridium liner formed within a trench in a dielectric layer, wherein the iridium liner is formed directly on the dielectric layer, a copper interconnect formed on the iridium liner, and an iridium capping layer formed on the copper interconnect. The iridium encased copper interconnect may be fabricated by providing a semiconductor substrate in a reactor, wherein the semiconductor substrate includes a trench etched into a dielectric layer, pulsing trimethylaluminum into the reactor proximate to the semiconductor substrate, pulsing an iridium precursor into the reactor proximate to the semiconductor substrate, wherein the trimethylaluminum enables an iridium species to deposit directly on the dielectric layer, depositing a copper seed layer on the iridium species layer using an electroless deposition process, and depositing a bulk copper layer on the copper seed layer using an electroplating process.
摘要翻译：铱包裹的铜互连包括形成在电介质层的沟槽内的铱衬里，其中铱衬垫直接形成在电介质层上，形成在铱衬垫上的铜互连以及形成在铜互连上的铱覆盖层。可以通过在反应器中提供半导体衬底来制造铱包络铜互连，其中半导体衬底包括蚀刻到电介质层中的沟槽，将靠近半导体衬底的三甲基铝脉冲发射到反应器中，将铱前驱物脉冲至接近于所述半导体衬底，其中所述三甲基铝能够使铱物质直接沉积在所述电介质层上，使用无电沉积工艺在所述铱物质层上沉积铜籽晶层，并且使用电镀工艺在所述铜籽晶层上沉积大块铜层。

7. 发明申请

US20070205510A1 Noble metal barrier layers 有权
标题翻译：贵金属阻隔层
公开(公告)号：US20070205510A1
公开(公告)日：2007-09-06
申请号：US11540386
申请日：2006-09-28
申请人： Adrien R. Lavoie , Juan E. Dominguez , Aaron A. Budrevich
发明人： Adrien R. Lavoie , Juan E. Dominguez , Aaron A. Budrevich
IPC分类号： C23C28/00
CPC分类号： C23C28/00 , C23C28/021 , C23C28/023 , C23C28/028 , C23C28/321 , C23C28/322 , C23C28/325 , C23C28/34 , C23C28/345
摘要： Noble metal barrier layers are disclosed. In one aspect, an apparatus may include a substrate, a dielectric layer over the substrate, and an interconnect structure within the dielectric layer. The interconnect structure may have a bulk metal and a barrier layer. The barrier layer may be disposed between the bulk metal and the dielectric layer. The barrier layer may include one or more metals selected from iridium, platinum, palladium, rhodium, osmium, gold, silver, rhenium, ruthenium, tungsten, and nickel.
摘要翻译：公开了贵金属阻挡层。在一个方面，一种装置可以包括衬底，在衬底上的电介质层，以及电介质层内的互连结构。互连结构可以具有体金属和阻挡层。阻挡层可以设置在本体金属和电介质层之间。阻挡层可以包括选自铱，铂，钯，铑，锇，金，银，铼，钌，钨和镍中的一种或多种金属。

8. 发明申请

US20110272811A1 USING UNSTABLE NITRIDES TO FORM SEMICONDUCTOR STRUCTURES 有权
标题翻译：使用不稳定的氮素形成半导体结构
公开(公告)号：US20110272811A1
公开(公告)日：2011-11-10
申请号：US13185094
申请日：2011-07-18
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L23/532
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

9. 发明授权

US07964746B2 Copper precursors for CVD/ALD/digital CVD of copper metal films 有权
标题翻译：铜金属膜CVD / ALD /数字化CVD的铜前体
公开(公告)号：US07964746B2
公开(公告)日：2011-06-21
申请号：US12058751
申请日：2008-03-30
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
IPC分类号： C07F1/08 , C23C18/40
CPC分类号： C07F17/00 , C23C16/45553
摘要： Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
摘要翻译：用于在基底上沉积铜或含铜膜的铜前体，例如微电子器件衬底或其它表面。前体包括各种类型的铜化合物，包括硼氢化铜，具有环戊二烯基型配体的铜化合物，具有环戊二烯基型的铜化合物和异氰化物配体，以及稳定的氢化铜。这些前体可以固体或液体形式使用，以便形成用于与基底接触的前体蒸气，通过诸如化学气相沉积（CVD），原子层沉积（ALD）或快速蒸镀（数字式）技术形成沉积的铜 CVD）。

10. 发明授权

US07687911B2 Silicon-alloy based barrier layers for integrated circuit metal interconnects 失效
标题翻译：用于集成电路金属互连的硅基合金阻挡层
公开(公告)号：US07687911B2
公开(公告)日：2010-03-30
申请号：US11517736
申请日：2006-09-07
申请人： Juan E. Dominguez , Adrien R. Lavoie
发明人： Juan E. Dominguez , Adrien R. Lavoie
IPC分类号： H01L21/48
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/342 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a silicon alloy based barrier layer comprises providing a substrate having a dielectric layer including a trench, placing the substrate in a reactor, and carrying out a process cycle, wherein the process cycle comprises introducing a silicon containing precursor into the reactor, introducing a metal containing precursor into the reactor, and introducing a co-reactant into the reactor, wherein the silicon, metal, and co-reactant react to form a silicon alloy layer that is conformally deposited on a bottom and a sidewall of the trench.
摘要翻译：一种用于形成基于硅合金的阻挡层的方法包括提供具有包括沟槽的介电层的衬底，将衬底放置在反应器中并执行工艺循环，其中工艺循环包括将含硅前体引入反应器中，将含金属的前体引入反应器中，并将共反应物引入反应器中，其中硅，金属和共反应物反应以形成共形沉积在沟槽的底部和侧壁上的硅合金层。

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