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1. 发明授权

US07550385B2 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US07550385B2
公开(公告)日：2009-06-23
申请号：US11240005
申请日：2005-09-30
申请人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
发明人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

2. 发明授权

US07524765B2 Direct tailoring of the composition and density of ALD films 失效
标题翻译：直接定制ALD膜的组成和密度
公开(公告)号：US07524765B2
公开(公告)日：2009-04-28
申请号：US11266131
申请日：2005-11-02
申请人： Juan E. Dominquez , Adrien R. Lavoie , Harsono S. Simka , John Plombon , David M. Thompson , John D. Peck
发明人： Juan E. Dominquez , Adrien R. Lavoie , Harsono S. Simka , John Plombon , David M. Thompson , John D. Peck
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/45525 , C23C16/45529 , H01L21/76843 , H01L21/76846 , H01L21/76864
摘要： A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.
摘要翻译：一种方法，包括在底物存在下根据第一组条件引入有机金属前体; 在基材存在下根据不同的第二组条件引入有机金属前体; 并且根据原子层沉积工艺在基底上形成包含有机金属前体的部分的层。一种包括计算设备的系统，包括微处理器，所述微处理器耦合到印刷电路板，所述微处理器包括具有多个电路器件的衬底，所述电路器件具有通过形成在多个电介质层中的互连结构而形成于所述多个电路器件的电连接形成在所述基板上，并且所述多个互连结构中的每一个通过根据原子层沉积工艺形成的阻挡层与所述多个电介质层分离。

3. 发明授权

US07956207B2 Heteroleptic organometallic compounds 有权
标题翻译：杂音有机金属化合物
公开(公告)号：US07956207B2
公开(公告)日：2011-06-07
申请号：US11899784
申请日：2007-09-07
申请人： Scott Houston Meiere , John D. Peck , Ronald F. Spohn , David M. Thompson
发明人： Scott Houston Meiere , John D. Peck , Ronald F. Spohn , David M. Thompson
IPC分类号： C07F7/00 , C07F11/00 , C23C16/00
CPC分类号： C07F7/10
摘要： This invention relates to organometallic compounds represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.
摘要翻译：本发明涉及由式（L1）xM（L2）y表示的有机金属化合物，其中M是金属或准金属，L1和L2不同，并且各自是烃基或含杂原子的基团; x是至少为1的值; y值至少为1; x + y等于M的氧化态; 并且其中（i）L1具有足够大的空间体积，使得由于空间阻力，x不能是等于M的氧化态的值，（ii）L2具有足够小的空间体积，使得由于缺乏空间阻碍，y只有在x不是至少为1的值的情况下才可以是等于M的氧化态的值，以及（iii）L1和L2具有足够的空间体积以保持其中x的杂波结构 + y等于M的氧化态; 一种生产有机金属化合物的方法，以及一种由有机金属前体化合物制备薄膜或涂层的方法。

4. 发明授权

US07927658B2 Deposition processes using group 8 (VIII) metallocene precursors 有权
标题翻译：使用第8（VIII）族茂金属前体的沉积方法
公开(公告)号：US07927658B2
公开(公告)日：2011-04-19
申请号：US10685785
申请日：2003-10-16
申请人： David M. Thompson , Cynthia A. Hoover , John D. Peck , Michael M. Litwin
发明人： David M. Thompson , Cynthia A. Hoover , John D. Peck , Michael M. Litwin
IPC分类号： C23C16/06
CPC分类号： C23C16/406 , C23C16/18 , C23C16/40
摘要： Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp′, where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1, where D1 is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C═O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C═O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C═O)Ca1Hb1Xc1; and Cp′ is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D1′, where D1′ is X; Ca1Hb1Xc1; Ca2Hb2Xc2(C═O)Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2(C═O)OCa1Hb1Xc1; or Ca2Hb2Xc2O(C═O)Ca1Hb1Xc1. D1 and D1′ are different from one another. X is a halogen atom or NO2; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1−c1; c1 is an integer between 0 and 2(a1)+1−b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1−c2; and c2 is an integer between 0 and 2(a2)+1−b2. The process can be used in manufacturing or processing electronic devices.
摘要翻译：本文公开了使用具有通式CpMCp'的茂金属或茂金属样前体制备膜，涂层或粉末的方法，其中M是选自Ru，Os和Fe的金属; Cp是包括至少一个取代基组D1的第一取代的环戊二烯基或环戊二烯基，例如茚基，部分，其中D1是X; Ca1Hb1Xc1; Ca2Hb2Xc2（C = O）Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2（C = O）OCa1Hb1Xc1; 或Ca2Hb2Xc2O（C = O）Ca1Hb1Xc1; 并且Cp'是包含至少一个取代基组D1'的第二取代的环戊二烯基或环戊二烯基，例如茚基，部分，其中D1'是X; Ca1Hb1Xc1; Ca2Hb2Xc2（C = O）Ca1Hb1Xc1; Ca2Hb2Xc2OCa1Hb1Xc1; Ca2Hb2Xc2（C = O）OCa1Hb1Xc1; 或Ca2Hb2Xc2O（C = O）Ca1Hb1Xc1。 D1和D1'彼此不同。 X是卤素原子或NO 2; a1是1〜8之间的整数; b1是0和2（a1）+ 1-c1之间的整数; c1是0和2（a1）+ 1-b1之间的整数; b1 + c1至少为1; a2是0和8之间的整数; b2是0和2（a2）+ 1-c2之间的整数; c2为0〜2（a2）+ 1-b2之间的整数。该方法可用于制造或处理电子设备。

5. 发明申请

US20080081922A1 Heteroleptic organometallic compounds 有权
标题翻译：杂音有机金属化合物
公开(公告)号：US20080081922A1
公开(公告)日：2008-04-03
申请号：US11899784
申请日：2007-09-07
申请人： Scott Houston Meiere , John D. Peck , Ronald F. Spohn , David M. Thompson
发明人： Scott Houston Meiere , John D. Peck , Ronald F. Spohn , David M. Thompson
IPC分类号： C07F7/00
CPC分类号： C07F7/10
摘要： This invention relates to organometallic compounds represented by the formula (L1)xM(L2)y wherein M is a metal or metalloid, L1 and L2 are different and are each a hydrocarbon group or a heteroatom-containing group; x is a value of at least 1; y is a value of at least 1; x+y is equal to the oxidation state of M; and wherein (i) L1 has a steric bulk sufficiently large such that, due to steric hinderance, x cannot be a value equal to the oxidation state of M, (ii) L2 has a steric bulk sufficiently small such that, due to lack of steric hinderance, y can be a value equal to the oxidation state of M only in the event that x is not a value of at least 1, and (iii) L1 and L2 have a steric bulk sufficient to maintain a heteroleptic structure in which x+y is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.
摘要翻译：本发明涉及由下式（L 1/2）M M（L 2）n Y表示的有机金属化合物，其中 M是金属或准金属，L 1和L 2不同，并且各自是烃基或含杂原子的基团; x是至少为1的值; y是至少为1的值; y =等于X的氧化态; 并且其中（i）L 1具有足够大的空间体积，使得由于空间阻碍，X不能是等于M的氧化态的值（（ ii）L 2 2具有足够小的空间体积，使得由于缺乏空间阻力，只有在Y的氧化状态下，Y可以是等于M的氧化态的值事件： x不是至少为1的值，并且（iii）L 1和L 2具有足以维持的空间体积其中 x + y的异质结构等于M的氧化态; 一种生产有机金属化合物的方法，以及一种由有机金属前体化合物制备薄膜或涂层的方法。

6. 发明授权

US10118823B2 Method of thermally-stabilizing an oxygen transport membrane-based reforming system 有权
公开(公告)号：US10118823B2
公开(公告)日：2018-11-06
申请号：US14969486
申请日：2015-12-15
申请人： Sean M. Kelly , Sadashiv M. Swami , John D. Peck
发明人： Sean M. Kelly , Sadashiv M. Swami , John D. Peck
IPC分类号： C01B3/38 , C01B13/02
摘要： A method of operating an oxygen transport membrane based reforming system employing one or more packs of thermally coupled panels of reformer tubes and oxygen transport membrane (“OTM”) reactors close to thermo-neutral point is provided. The method produces syngas by converting a hydrocarbon-containing feed, such as natural gas in the reformer tubes of a pack by endothermic steam reforming reactions. The heat required for endothermic reforming reactions is provided by exothermic oxidizing reactions occurring inside the OTM reactors of the pack. At a thermo-neutral point the heat released by exothermic reactions matches the heat required to support endothermic reactions and heat losses in the pack. The method modulates the flow rate of hydrocarbon-containing feed and/or steam-to-carbon ratio of the combined feed to the pack to maintain the surface temperature of oxygen transport membrane reactors below a target maximum temperature. The syngas product oxygen-to-carbon ratio is maintained within a desired target range such that the OTM based reforming system is operated close to thermo-neutral point.

7. 发明申请

US20100227476A1 ATOMIC LAYER DEPOSITION PROCESSES 审中-公开
标题翻译：原子层沉积过程
公开(公告)号：US20100227476A1
公开(公告)日：2010-09-09
申请号：US12714579
申请日：2010-03-01
申请人： John D. Peck
发明人： John D. Peck
IPC分类号： H01L21/3205
CPC分类号： C23C16/40 , C23C16/45527
摘要： This invention relates to method of forming a thin film on a substrate in a reaction chamber by an atomic layer deposition process comprising a plurality of individual cycles. The plurality of individual cycles comprise at least two groupings of individual cycles. The individual cycles comprise (i) introducing a gaseous metal containing precursor into the reaction chamber and exposing the substrate to the gaseous metal containing precursor, wherein at least a portion of the metal containing precursor is chemisorbed onto the surface of the substrate to form a monolayer thereon, (ii) stopping introduction of the metal containing precursor and purging the volume of the reaction chamber; (iii) introducing a gaseous oxygen source compound into the reaction chamber and exposing the monolayer to the gaseous oxygen source compound, wherein at least a portion of the oxygen source compound chemically reacts with the monolayer; and (iv) stopping introduction of the oxygen source compound and purging the volume of the reaction chamber. The method involves repeating the individual cycles until a thin film of desired thickness is obtained. The method also involves carrying out at least two groupings of individual cycles at different process conditions. The methods are useful for producing a thin film on a semiconductor substrate, particularly metal containing thin films for electrode applications in microelectronics.
摘要翻译：本发明涉及通过包括多个单独循环的原子层沉积工艺在反应室中的衬底上形成薄膜的方法。多个单独循环包括至少两组单独循环。单个循环包括（i）将含气态金属的前体引入反应室并将基底暴露于含气态金属的前体，其中至少一部分含金属的前体被化学吸附到基底的表面上以形成单层（ii）停止引入含有金属的前体并净化反应室的体积; （iii）将气态氧源化合物引入反应室并将单层暴露于气态氧源化合物，其中至少一部分氧源化合物与单层化学反应; 和（iv）停止引入氧源化合物并清除反应室的体积。该方法包括重复各个循环，直到获得所需厚度的薄膜。该方法还涉及在不同的工艺条件下进行至少两组单独的循环。该方法可用于在半导体衬底上制造薄膜，特别是用于在微电子学中用于电极应用的金属薄膜。

8. 发明申请

US20090258143A1 REAGENT DISPENSING APPARATUS AND DELIVERY METHOD 审中-公开
公开(公告)号：US20090258143A1
公开(公告)日：2009-10-15
申请号：US12407322
申请日：2009-03-19
申请人： John D. Peck
发明人： John D. Peck
IPC分类号： C23C16/00 , G05D7/00
CPC分类号： C23C16/4482 , B01J4/001 , C23C16/4481 , F16L19/0218 , Y10T137/0324
摘要： This invention relates to a vapor or liquid phase reagent dispensing apparatus that may be used for dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. This invention reduces the number of container designs required to support different applications. A standard two port container without a tube can be converted to a container capable of being used in applications which require a tube (i.e., bubbler tube for gas delivery or a dip tube for liquid delivery), by inserting a gasket/tube adapter between one of the ports and the corresponding valve in accordance with this invention.

9. 发明申请

US20170166445A1 METHOD OF THERMALLY-STABILIZING AN OXYGEN TRANSPORT MEMBRANE-BASED REFORMING SYSTEM 审中-公开
公开(公告)号：US20170166445A1
公开(公告)日：2017-06-15
申请号：US14969486
申请日：2015-12-15
申请人： Sean M. Kelly , Sadashiv M. Swami , John D. Peck
发明人： Sean M. Kelly , Sadashiv M. Swami , John D. Peck
IPC分类号： C01B3/38
CPC分类号： C01B3/382 , C01B13/0251 , C01B2203/0233 , C01B2203/0244 , C01B2203/0844 , C01B2203/142
摘要： A method of operating an oxygen transport membrane based reforming system employing one or more packs of thermally coupled panels of reformer tubes and oxygen transport membrane (“OTM”) reactors close to thermo-neutral point is provided. The method produces syngas by converting a hydrocarbon-containing feed, such as natural gas in the reformer tubes of a pack by endothermic steam reforming reactions. The heat required for endothermic reforming reactions is provided by exothermic oxidizing reactions occurring inside the OTM reactors of the pack. At a thermo-neutral point the heat released by exothermic reactions matches the heat required to support endothermic reactions and heat losses in the pack. The method modulates the flow rate of hydrocarbon-containing feed and/or steam-to-carbon ratio of the combined feed to the pack to maintain the surface temperature of oxygen transport membrane reactors below a target maximum temperature. The syngas product oxygen-to-carbon ratio is maintained within a desired target range such that the OTM based reforming system is operated close to thermo-neutral point.

10. 发明授权

US08726551B2 Retroreflective film 有权
标题翻译：逆反射膜
公开(公告)号：US08726551B2
公开(公告)日：2014-05-20
申请号：US11722102
申请日：2006-01-10
申请人： John D. Peck , Eduardo da Silva Matos
发明人： John D. Peck , Eduardo da Silva Matos
IPC分类号： G09F13/16
CPC分类号： B60R13/10 , B29C43/021 , B29C43/203 , B29C2043/023 , B29D11/00605 , B29K2105/256 , B29K2995/003 , B29L2011/0083 , B29L2031/3061 , B29L2031/723 , B29L2031/7232 , G02B5/124
摘要： A retroreflective film (30) comprising a cover layer (40), a prismatic layer (42), a reflective layer (44), an adhesive layer (46), and a protective liner (48). The prismatic layer (42) has retroreflective prism elements (60) formed on its rear surface and the reflective layer (44) covers the rear surfaces of the prism elements. The film (30) has an elongation of at least 20% and can be constructed for use with a substrate subjected to a cold-work deformation process, such as stamping, embossing, or pressing.
摘要翻译：包括覆盖层（40），棱镜层（42），反射层（44），粘合剂层（46）和保护衬垫（48）的回射膜（30）。棱镜层（42）具有形成在其后表面上的反光棱镜元件（60），反射层（44）覆盖棱镜元件的后表面。膜（30）具有至少20％的伸长率，并且可以被构造用于经受经过冷加工变形处理的基底，例如冲压，压花或压制。

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