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1. 发明授权

US07550385B2 Amine-free deposition of metal-nitride films 有权
标题翻译：无氮化物沉积金属氮化物膜
公开(公告)号：US07550385B2
公开(公告)日：2009-06-23
申请号：US11240005
申请日：2005-09-30
申请人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
发明人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译：形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。将基板放置在反应室内; 并加热。然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂并且等离子体在基板表面反应形成金属碳化物层。可以重复和改变工艺循环以形成渐变的金属碳化物层。

2. 发明申请

US20100022083A1 CARBON NANOTUBE INTERCONNECT STRUCTURES 审中-公开
标题翻译：碳纳米管互连结构
公开(公告)号：US20100022083A1
公开(公告)日：2010-01-28
申请号：US12548779
申请日：2009-08-27
申请人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
发明人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76838 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/75 , H01L2924/00
摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.
摘要翻译：一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

3. 发明申请

US20080157212A1 Tunable gate electrode work function material for transistor applications 有权
标题翻译：晶体管应用的可调栅电极功能材料
公开(公告)号：US20080157212A1
公开(公告)日：2008-07-03
申请号：US11647893
申请日：2006-12-28
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L27/092 , H01L21/8238 , H01L21/28
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

4. 发明授权

US08319287B2 Tunable gate electrode work function material for transistor applications 有权
标题翻译：晶体管应用的可调栅电极功能材料
公开(公告)号：US08319287B2
公开(公告)日：2012-11-27
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

5. 发明申请

US20100140717A1 TUNABLE GATE ELECTRODE WORK FUNCTION MATERIAL FOR TRANSISTOR APPLICATIONS 有权
标题翻译：用于晶体管应用的可控栅极电极功能材料
公开(公告)号：US20100140717A1
公开(公告)日：2010-06-10
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

6. 发明授权

US07625817B2 Method of fabricating a carbon nanotube interconnect structures 有权
标题翻译：制造碳纳米管互连结构的方法
公开(公告)号：US07625817B2
公开(公告)日：2009-12-01
申请号：US11325774
申请日：2005-12-30
申请人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
发明人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76838 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/75 , H01L2924/00
摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.
摘要翻译：一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

7. 发明授权

US07682891B2 Tunable gate electrode work function material for transistor applications 有权
标题翻译：晶体管应用的可调栅电极功能材料
公开(公告)号：US07682891B2
公开(公告)日：2010-03-23
申请号：US11647893
申请日：2006-12-28
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

8. 发明申请

US20070281476A1 Methods for forming thin copper films and structures formed thereby 审中-公开
标题翻译：用于形成薄铜膜的方法及由此形成的结构
公开(公告)号：US20070281476A1
公开(公告)日：2007-12-06
申请号：US11446339
申请日：2006-06-02
申请人： Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon , Valery M. Dubin , Harsono S. Simka , Joseph H. Han , Bryan C. Hendrix , Gregory T. Stauf , Jeffrey F. Roeder , Tiannu Chen , Chongying Xu , Thomas H. Baum
发明人： Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon , Valery M. Dubin , Harsono S. Simka , Joseph H. Han , Bryan C. Hendrix , Gregory T. Stauf , Jeffrey F. Roeder , Tiannu Chen , Chongying Xu , Thomas H. Baum
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45525 , C23C16/45553 , C23C16/56
摘要： Methods and associated structures of forming a microelectronic structure are described. Those methods may comprise forming a thin conformal copper layer on a surface by utilizing a formation temperature below about 125 degrees Celsius.
摘要翻译：描述了形成微电子结构的方法和相关结构。那些方法可以包括通过利用低于约125摄氏度的地层温度在表面上形成薄的共形铜层。

9. 发明申请

US20090209777A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
标题翻译：有机化合物，其制备方法及其使用方法
公开(公告)号：US20090209777A1
公开(公告)日：2009-08-20
申请号：US12352256
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： C07F17/02
CPC分类号： C07F15/0053 , C08K5/56 , C09D1/00 , C09D7/63 , C23C16/18
摘要： This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.
摘要翻译：本发明涉及具有式（L1）M（L2）y的有机金属化合物，其中M是金属或准金属，L1是取代或未取代的阴离子6电子供体配体，L2相同或不同，为（i）取代的或未取代的阴离子2电子供体配体，（ii）取代或未取代的阴离子4电子供体配体，（iii）取代或未取代的中性2电子供体配体，或（iv）取代或未取代的具有侧基的阴离子4电子给体配体中性2电子供体部分; y为1〜3的整数，并且其中M的氧化数和L1和L2的电荷之和等于0; 一种生产有机金属化合物的方法，以及由有机金属化合物制备薄膜或涂层的方法。有机金属化合物可用作半导体应用，作为用于膜沉积的化学蒸气或原子层沉积前体。

10. 发明申请

US20090200524A1 ORGANOMETALLIC COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：US20090200524A1
公开(公告)日：2009-08-13
申请号：US12352186
申请日：2009-01-12
申请人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
发明人： David M. Thompson , Joan Geary , Adrien R. Lavoie , Juan E. Dominguez
IPC分类号： H01B1/12 , C07F17/02
CPC分类号： C07F15/0046
摘要： This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

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