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1. 发明授权

US08466449B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08466449B2
公开(公告)日：2013-06-18
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00 , H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

2. 发明申请

US20090146132A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20090146132A1
公开(公告)日：2009-06-11
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

3. 发明授权

US07923716B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07923716B2
公开(公告)日：2011-04-12
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

4. 发明申请

US20110186815A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110186815A1
公开(公告)日：2011-08-04
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

5. 发明授权

US07915607B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07915607B2
公开(公告)日：2011-03-29
申请号：US12403728
申请日：2009-03-13
申请人： Seong Suk Lee , Hee Seok Park , Jae Woong Han
发明人： Seong Suk Lee , Hee Seok Park , Jae Woong Han
IPC分类号： H01L29/06 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0218 , H01S5/3407 , H01S5/3416 , H01S5/342
摘要： A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.
摘要翻译：氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。交替层叠的结构包括单元多层结构和厚的量子势垒阱。单元多层结构包括第一量子阱层，形成的第二量子阱层，隧道量子势垒层和晶体质量改进层。厚量子阱阱可以形成为与第一和第二量子阱层相邻，其厚度大于第一和第二量子阱层的厚度。

6. 发明申请

US20100080257A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100080257A1
公开(公告)日：2010-04-01
申请号：US12403728
申请日：2009-03-13
申请人： Seong Suk LEE , Hee Seok Park , Jae Woong Han
发明人： Seong Suk LEE , Hee Seok Park , Jae Woong Han
IPC分类号： H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0218 , H01S5/3407 , H01S5/3416 , H01S5/342
摘要： A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.
摘要翻译：氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。交替层叠的结构包括单元多层结构和厚的量子势垒阱。单元多层结构包括第一量子阱层，形成的第二量子阱层，隧道量子势垒层和晶体质量改进层。厚量子阱阱可以形成为与第一和第二量子阱层相邻，其厚度大于第一和第二量子阱层的厚度。

7. 发明授权

US08536026B2 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：选择性生长方法，氮化物半导体发光器件及其制造方法
公开(公告)号：US08536026B2
公开(公告)日：2013-09-17
申请号：US11822185
申请日：2007-07-03
申请人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
发明人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
IPC分类号： H01L29/24 , H01L21/36 , H01L33/00
CPC分类号： C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.
摘要翻译：一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力斜晶面。

8. 发明授权

US08129741B2 Light emitting diode package 有权
标题翻译：发光二极管封装
公开(公告)号：US08129741B2
公开(公告)日：2012-03-06
申请号：US12608442
申请日：2009-10-29
申请人： Jin Bock Lee , Hee Seok Park , Hyung Kun Kim , Young Jin Lee
发明人： Jin Bock Lee , Hee Seok Park , Hyung Kun Kim , Young Jin Lee
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24 , H01L23/02 , H01L23/22 , H01L23/24 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/28
CPC分类号： H01L33/483 , H01L24/48 , H01L24/73 , H01L33/60 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/15153 , H01L2924/15165 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.
摘要翻译：本发明提供了一种发光二极管封装，其包括：封装模具，其具有第一空腔和具有比第一空腔小的尺寸的第二空腔; 分别设置在第一腔和第二腔的底表面上的第一和第二电极垫; 安装在所述第一电极焊盘上的LED芯片; 用于在所述LED芯片和所述第二电极焊盘之间提供电连接的导线; 以及填充在第一腔和第二腔内的成型材料。

9. 发明授权

US07998767B2 Method for manufacturing a facet extraction LED 有权
标题翻译：制造小面提取LED的方法
公开(公告)号：US07998767B2
公开(公告)日：2011-08-16
申请号：US12704570
申请日：2010-02-12
申请人： Tae Won Lee , Hee Seok Park , Masayoshi Koike
发明人： Tae Won Lee , Hee Seok Park , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/20
摘要： A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.
摘要翻译：提取光提取效率的小面提取LED及其制造方法。提供基板。发光部包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。 p电极和n电极分别连接到p型半导体层和n型半导体层。 p电极和n电极形成在LED的同一侧。发光部分被构造为环。

10. 发明授权

US08882319B2 Light emitting device assembly and headlamp including the same 有权
公开(公告)号：US08882319B2
公开(公告)日：2014-11-11
申请号：US13475486
申请日：2012-05-18
申请人： Hee Dong Kim , Moo Youn Park , Soo Hwan Lee , Hee Seok Park
发明人： Hee Dong Kim , Moo Youn Park , Soo Hwan Lee , Hee Seok Park
IPC分类号： F21V13/04 , H01L33/60 , F21S8/10 , H01L33/50 , H01L33/46 , H01L33/44
CPC分类号： F21S48/1388 , F21S41/143 , F21S41/16 , F21S41/255 , F21S41/32 , F21S41/323 , F21S41/37 , H01L33/44 , H01L33/46 , H01L33/50 , H01L33/501 , H01L33/507 , H01L33/60 , H01L2933/0091
摘要： An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

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