专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080035951A1 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：选择性生长方法，氮化物半导体发光器件及其制造方法
公开(公告)号：US20080035951A1
公开(公告)日：2008-02-14
申请号：US11822185
申请日：2007-07-03
申请人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
发明人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
IPC分类号： H01L29/24 , H01L21/36 , H01L33/00
CPC分类号： C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.
摘要翻译：一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力斜晶面。

2. 发明授权

US08536026B2 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：选择性生长方法，氮化物半导体发光器件及其制造方法
公开(公告)号：US08536026B2
公开(公告)日：2013-09-17
申请号：US11822185
申请日：2007-07-03
申请人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
发明人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
IPC分类号： H01L29/24 , H01L21/36 , H01L33/00
CPC分类号： C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.
摘要翻译：一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力斜晶面。

3. 发明申请

US20110300652A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20110300652A1
公开(公告)日：2011-12-08
申请号：US13211107
申请日：2011-08-16
申请人： Seong Eun Park , Bang Won OH , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
发明人： Seong Eun Park , Bang Won OH , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
IPC分类号： H01L33/60
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/0079 , H01S5/3054 , H01S5/3072 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.
摘要翻译：提供了一种氮化物半导体发光器件及其制造方法。所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

4. 发明申请

US20080099781A1 Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same 审中-公开
标题翻译：制造III族氮化物半导体薄膜的方法及使用该III族氮化物半导体薄膜的III族氮化物半导体器件的制造方法
公开(公告)号：US20080099781A1
公开(公告)日：2008-05-01
申请号：US11898955
申请日：2007-09-18
申请人： Rak Jun Choi , Kureshov Vladimir , Bang Won Oh , Gil Han Park , Hee Seok Park , Seong Eun Park , Young Min Park , Min Ho Kim
发明人： Rak Jun Choi , Kureshov Vladimir , Bang Won Oh , Gil Han Park , Hee Seok Park , Seong Eun Park , Young Min Park , Min Ho Kim
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.
摘要翻译：一种III族氮化物半导体薄膜的制造方法以及使用该III族氮化物半导体薄膜的氮化物半导体发光元件的制造方法，其特征在于，包括：生长第一氮化物单晶在用于生长氮化物的衬底上; 将蚀刻气体施加到第一氮化物单晶的顶表面以在高位错密度区域中选择性地形成多个凹坑; 以及在所述第一氮化物单晶上生长第二氮化物单晶以保持所述凹坑为空白。

5. 发明申请

US20080078986A1 Nitride semiconductor light emitting device and manufacturing method of the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20080078986A1
公开(公告)日：2008-04-03
申请号：US11902396
申请日：2007-09-21
申请人： Seong Eun Park , Bang Won Oh , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
发明人： Seong Eun Park , Bang Won Oh , Gil Han Park , Min Ho Kim , Rak Jun Choi , Young Min Park , Hee Seok Park
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/0079 , H01S5/3054 , H01S5/3072 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device and a manufacturing method of the same. The nitride semiconductor light emitting device including: a substrate for growing a nitride single crystal, the substrate having electrical conductivity; a p-type nitride semiconductor layer formed on the substrate; an active layer formed on the p-type nitride semiconductor layer, the active layer including a plurality of quantum barrier layers and a plurality of quantum well layers deposited alternately on each other; an n-type nitride semiconductor layer formed on the active layer; a p-electrode formed on a bottom of the substrate; and an n-electrode formed on a top of the n-type nitride semiconductor layer.
摘要翻译：提供了一种氮化物半导体发光器件及其制造方法。所述氮化物半导体发光器件包括：用于生长氮化物单晶的衬底，所述衬底具有导电性; 在该基板上形成的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和多个量子阱层; 形成在有源层上的n型氮化物半导体层; 形成在所述基板的底部上的p电极; 以及形成在n型氮化物半导体层的顶部上的n电极。

6. 发明申请

US20110081048A1 METHOD AND APPARATUS FOR TRACKING MULTIPLE OBJECTS AND STORAGE MEDIUM 失效
标题翻译：跟踪多个对象和存储介质的方法和装置
公开(公告)号：US20110081048A1
公开(公告)日：2011-04-07
申请号：US12953354
申请日：2010-11-23
申请人： Woon Tack WOO , Young Min Park
发明人： Woon Tack WOO , Young Min Park
IPC分类号： G06K9/00
CPC分类号： G06T7/251 , G06T7/12 , G06T7/246 , G06T2207/10016
摘要： The present invention relates to a method and an apparatus for tracking multiple objects and a storage medium. More particularly, the present invention relates to a method and an apparatus for tracking multiple objects that performs object detection of one subset per an input image by performing only objection detection of one subset per camera image regardless of the number N of objects to be tracked and tracks all objects among images while the objects are detected to track multiple objects in real time, and a storage medium. The method for tracking multiple objects according to the exemplary embodiment of the present invention includes: (a) performing object detection with respect to only objects of one subset among multiple objects with respect to an input image at a predetermined time; and (b) tracking all objects among images from an image of a time prior to the predetermined time with respect to all objects in the input image while step (a) is performed.
摘要翻译：本发明涉及用于跟踪多个物体和存储介质的方法和装置。更具体地，本发明涉及用于跟踪多个对象的方法和装置，所述多个对象通过仅对每个摄像机图像执行一个子集的对象检测来执行每个输入图像的一个子集的对象检测，而不考虑要跟踪的对象的数量N; 在检测到对象以实时跟踪多个对象时跟踪图像中的所有对象以及存储介质。根据本发明的示例性实施例的用于跟踪多个对象的方法包括：（a）针对相对于输入图像在预定时间的多个对象中的一个子集的仅对象执行对象检测; 以及（b）在执行步骤（a）时，相对于输入图像中的所有对象，在预定时间之前的时间的图像中跟踪图像之间的所有对象。

7. 发明授权

US07716941B2 Multi-type air conditioner with defrosting device 有权
标题翻译：带除霜装置的多功能空调
公开(公告)号：US07716941B2
公开(公告)日：2010-05-18
申请号：US11678974
申请日：2007-02-26
申请人： Jong Han Park , Young Min Park , Chang Seon Lee , Sung Oh Choi , Sung Chun Kim , Seung Yong Chang , Seok Ho Yoon , Baik Young Chung
发明人： Jong Han Park , Young Min Park , Chang Seon Lee , Sung Oh Choi , Sung Chun Kim , Seung Yong Chang , Seok Ho Yoon , Baik Young Chung
IPC分类号： F25B47/00
CPC分类号： F25B47/022 , F24F11/42 , F25B13/00 , F25B2313/007 , F25B2313/0231 , F25B2313/02331 , F25B2313/02334 , F25B2313/02532 , F25B2313/02542
摘要： Multi-type air conditioner comprising an outdoor unit installed in an outdoor, comprising a compressor, a refrigerant flow controlling part connected to a discharge end of the compressor for guiding the refrigerant proper to operation conditions selectively, an outdoor heat exchanger connected to the refrigerant flow controlling part, a defrosting device at a side of the outdoor heat exchanger, and a piping system connected between the parts, a plurality of indoor units each installed in a room and having an indoor heat exchanger and an electronic expansion valve having one end connected to one end of the indoor heat exchanger, and a distributor between the outdoor unit and the indoor units for selectively guiding refrigerant from the outdoor unit to the plurality of indoor units proper to operation conditions, and guiding the refrigerant passed through the indoor units to the outdoor unit again.
摘要翻译：一种多室型空调机，包括安装在室外的室外机，包括压缩机，制冷剂流量控制部分，连接到压缩机的排出端，用于选择性地引导适合于运行状态的制冷剂，连接到制冷剂流的室外热交换器室外热交换器一侧的除霜装置和连接在所述部件之间的管道系统，多个室内单元，每个室内单元安装在室内并具有室内热交换器和电子膨胀阀，所述电子膨胀阀的一端连接到室内热交换器的一端和室外机与室内机之间的分配器，用于将制冷剂从室外机选择性地引导到适合于运行条件的多个室内机，并将通过室内机的制冷剂引导到室外单位。

8. 发明授权

US07185502B2 Multi-type air conditioner and method for controlling operation of the same 有权
标题翻译：多型空调及其操作方法
公开(公告)号：US07185502B2
公开(公告)日：2007-03-06
申请号：US10729013
申请日：2003-12-08
申请人： Jong Han Park , Young Min Park , Chang Seon Lee , Sung Oh Choi , Sung Chun Kim , Seung Yong Chang , Seok Ho Yoon , Baik Young Chung
发明人： Jong Han Park , Young Min Park , Chang Seon Lee , Sung Oh Choi , Sung Chun Kim , Seung Yong Chang , Seok Ho Yoon , Baik Young Chung
IPC分类号： F25D21/06 , F25B13/00 , F25B29/00 , F25B43/00
CPC分类号： F25B43/006 , F25B13/00 , F25B47/006 , F25B2313/023 , F25B2400/01
摘要： Air conditioner, and method for controlling an operation of the same, the air conditioner including a sheath heater in the accumulator for heating the refrigerant in room heating for delaying deposition of frost on the outdoor heat exchanger. The sheath heater includes a coil formed heat generating part, and two electrodes connected to the heat generating part for supplying power. The method including the step of varying the heat generating rate of the sheath heater with an exterior temperature or a capacity of the indoor unit, thereby delaying deposition of frost on the outdoor heat exchanger.
摘要翻译：空调器及其操作方法，所述空调机包括在所述蓄热器中的护套加热器，用于在室内加热用于在室外热交换器上延迟霜冻的室内制冷剂。鞘加热器包括线圈形成的发热部分，以及连接到用于供电的发热部分的两个电极。该方法包括以外部温度或室内单元的容量改变护套加热器的发热速率的步骤，从而延迟霜冻在室外热交换器上。

9. 发明授权

US07104087B2 Multi-type air conditioner 有权
标题翻译：多型空调
公开(公告)号：US07104087B2
公开(公告)日：2006-09-12
申请号：US10673130
申请日：2003-09-30
申请人： Jong Han Park , Young Min Park
发明人： Jong Han Park , Young Min Park
IPC分类号： F25B43/00
CPC分类号： F25B43/003 , F25B13/00 , F25B41/046 , F25B2313/007 , F25B2313/0231 , F25B2313/02331 , F25B2313/02334 , F25B2500/24
摘要： Multi-type air conditioner is disclosed for effective removal of foreign matters in refrigerant pipelines, including an outdoor unit having a compressor, an outdoor heat exchanger, a flow path control valve for controlling a flow path of the refrigerant from the compressor, and an outdoor unit piping system, a plurality of indoor units each having an indoor unit expansion device, an indoor heat exchanger, an indoor piping system, a distributor for receiving refrigerant from the outdoor unit, distributing the refrigerant to the indoor units proper to respective operation modes, and returning to the outdoor unit again, connection pipelines connected between the outdoor unit and the distributor, and foreign matter cutting off means mounted on each of the connection pipelines for prevention of the foreign matters from entering into the compressor of the outdoor unit.
摘要翻译：公开了一种多用途空调器，用于有效地除去制冷剂管线中的异物，包括具有压缩机的室外机，室外热交换器，用于控制来自压缩机的制冷剂的流路的流路控制阀，以及室外单元管道系统，多个室内单元，每个室内单元具有室内单元膨胀装置，室内热交换器，室内管道系统，用于从室外单元接收制冷剂的分配器，将制冷剂分配到适合于各个操作模式的室内单元，并且再次返回室外机，连接在室外机与分配器之间的连接管线，以及安装在每个连接管道上的异物切断装置，以防止异物进入室外机的压缩机。

10. 外观设计

USD527398S1 Refrigerator 有权
公开(公告)号：USD527398S1
公开(公告)日：2006-08-29
申请号：US29242344
申请日：2005-11-09
申请人： Jeong Min Kim , Hea Me Lee , Young Min Park
设计人： Jeong Min Kim , Hea Me Lee , Young Min Park

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式