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1. 发明申请

US20110186815A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110186815A1
公开(公告)日：2011-08-04
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

2. 发明授权

US08466449B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08466449B2
公开(公告)日：2013-06-18
申请号：US13083990
申请日：2011-04-11
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00 , H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

3. 发明申请

US20090146132A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20090146132A1
公开(公告)日：2009-06-11
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min LEE , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

4. 发明授权

US07923716B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07923716B2
公开(公告)日：2011-04-12
申请号：US12188698
申请日：2008-08-08
申请人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
发明人： Soo Min Lee , Hee Seok Park , Jae Woong Han , Seong Suk Lee , Cheol Soo Sone
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y10/00 , B82Y20/00 , H01L33/06
摘要： There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
摘要翻译：提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层和第二量子阱层，并且具有能够使载体穿过其的厚度。

5. 发明授权

US07915607B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07915607B2
公开(公告)日：2011-03-29
申请号：US12403728
申请日：2009-03-13
申请人： Seong Suk Lee , Hee Seok Park , Jae Woong Han
发明人： Seong Suk Lee , Hee Seok Park , Jae Woong Han
IPC分类号： H01L29/06 , H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0218 , H01S5/3407 , H01S5/3416 , H01S5/342
摘要： A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.
摘要翻译：氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。交替层叠的结构包括单元多层结构和厚的量子势垒阱。单元多层结构包括第一量子阱层，形成的第二量子阱层，隧道量子势垒层和晶体质量改进层。厚量子阱阱可以形成为与第一和第二量子阱层相邻，其厚度大于第一和第二量子阱层的厚度。

6. 发明申请

US20100080257A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100080257A1
公开(公告)日：2010-04-01
申请号：US12403728
申请日：2009-03-13
申请人： Seong Suk LEE , Hee Seok Park , Jae Woong Han
发明人： Seong Suk LEE , Hee Seok Park , Jae Woong Han
IPC分类号： H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0218 , H01S5/3407 , H01S5/3416 , H01S5/342
摘要： A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.
摘要翻译：氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。交替层叠的结构包括单元多层结构和厚的量子势垒阱。单元多层结构包括第一量子阱层，形成的第二量子阱层，隧道量子势垒层和晶体质量改进层。厚量子阱阱可以形成为与第一和第二量子阱层相邻，其厚度大于第一和第二量子阱层的厚度。

7. 发明授权

US07718992B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07718992B2
公开(公告)日：2010-05-18
申请号：US11525012
申请日：2006-09-22
申请人： Jong Hak Won , Soo Han Kim , Jae Woong Han , Seong Suk Lee
发明人： Jong Hak Won , Soo Han Kim , Jae Woong Han , Seong Suk Lee
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.
摘要翻译：提供一种氮化物半导体器件。在器件中，形成第一和第二导电型氮化物层。在第一和第二导电型氮化物层之间形成有源层。有源层包括至少一个量子势垒层和至少一个量子阱层。而且，在第一导电型氮化物层和有源层之间插入电流扩散层。当前的扩散层的In含量大于有源层的量子阱层。

8. 发明授权

US08008647B2 Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps 有权
标题翻译：具有超晶格有源层的氮化物半导体器件包括具有不同能带隙的势垒层
公开(公告)号：US08008647B2
公开(公告)日：2011-08-30
申请号：US11907169
申请日：2007-10-10
申请人： Seong Eun Park , Min Ho Kim , Jae Woong Han
发明人： Seong Eun Park , Min Ho Kim , Jae Woong Han
IPC分类号： H01L33/06 , H01L33/32 , H01L31/00 , H01L31/0248
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/3407 , H01S5/3416 , H01S5/34333
摘要： There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
摘要翻译：提供了包括超晶格结构的有源层的氮化物半导体器件。氮化物半导体器件包括：p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层，其中所述有源层具有超晶格结构，其中所述量子势垒层具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度，并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。氮化物半导体层。

9. 发明申请

US20090045392A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20090045392A1
公开(公告)日：2009-02-19
申请号：US11907169
申请日：2007-10-10
申请人： Seong Eun Park , Min Ho Kim , Jae Woong Han
发明人： Seong Eun Park , Min Ho Kim , Jae Woong Han
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/3407 , H01S5/3416 , H01S5/34333
摘要： There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
摘要翻译：提供了包括超晶格结构的有源层的氮化物半导体器件。氮化物半导体器件包括：p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层，所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层，其中所述有源层具有超晶格结构，其中所述量子势垒层具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度，并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。氮化物半导体层。

10. 发明授权

US08943859B2 Detergent case and washing machine having the same 有权
标题翻译：洗衣机和洗衣机具有相同的功能
公开(公告)号：US08943859B2
公开(公告)日：2015-02-03
申请号：US13173529
申请日：2011-06-30
申请人： Jong Hun Sung , Kwon Hee Kim , Woong Cho , Jung Hoon Kim , Chang Hee Jo , Yul Kwon , Kang Hyun Lee , Jae Woong Han , Hun Gun Koh , Doo Ri Kim , Hyo Chan Kwon
发明人： Jong Hun Sung , Kwon Hee Kim , Woong Cho , Jung Hoon Kim , Chang Hee Jo , Yul Kwon , Kang Hyun Lee , Jae Woong Han , Hun Gun Koh , Doo Ri Kim , Hyo Chan Kwon
IPC分类号： D06F39/02
CPC分类号： D06F39/022
摘要： A detergent case which includes a liquid detergent accommodation space, a siphon pipe protruded upwardly from a bottom surface of the liquid detergent accommodation space, and a siphon cap surrounding the siphon pipe. The detergent case also includes a remaining water discharge hole formed on a bottom surface of the liquid detergent accommodation space, and an opening and closing unit to open and close the remaining water discharge hole due to buoyancy of a liquid accommodated within the liquid detergent accommodation space.
摘要翻译：一种洗涤剂盒，包括液体洗涤剂容纳空间，从液体洗涤剂容纳空间的底面向上突出的虹吸管和围绕虹吸管的虹吸帽。洗涤剂盒还包括形成在液体洗涤剂容纳空间的底表面上的剩余的排水孔，以及打开和关闭由于容纳在液体洗涤剂容纳空间内的液体的浮力而导致的剩余排水孔的开闭单元。

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