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    • 1. 发明申请
    • NITRIDE SEMICONDUCTOR DEVICE
    • 氮化物半导体器件
    • US20110186815A1
    • 2011-08-04
    • US13083990
    • 2011-04-11
    • Soo Min LEEHee Seok ParkJae Woong HanSeong Suk LeeCheol Soo Sone
    • Soo Min LEEHee Seok ParkJae Woong HanSeong Suk LeeCheol Soo Sone
    • H01L29/15
    • H01L33/32B82Y10/00B82Y20/00H01L33/06
    • There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
    • 提供了一种氮化物半导体器件,包括:n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层,所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层,其中所述有源层包括第一量子阱 层,与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层,以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层,并且具有能够使载体穿过其的厚度。
    • 3. 发明申请
    • NITRIDE SEMICONDUCTOR DEVICE
    • 氮化物半导体器件
    • US20090146132A1
    • 2009-06-11
    • US12188698
    • 2008-08-08
    • Soo Min LEEHee Seok ParkJae Woong HanSeong Suk LeeCheol Soo Sone
    • Soo Min LEEHee Seok ParkJae Woong HanSeong Suk LeeCheol Soo Sone
    • H01L33/00
    • H01L33/32B82Y10/00B82Y20/00H01L33/06
    • There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
    • 提供了一种氮化物半导体器件,包括:n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层,所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层,其中所述有源层包括第一量子阱 层,与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层,以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层,并且具有能够使载体穿过其的厚度。
    • 4. 发明授权
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US07923716B2
    • 2011-04-12
    • US12188698
    • 2008-08-08
    • Soo Min LeeHee Seok ParkJae Woong HanSeong Suk LeeCheol Soo Sone
    • Soo Min LeeHee Seok ParkJae Woong HanSeong Suk LeeCheol Soo Sone
    • H01L31/00
    • H01L33/32B82Y10/00B82Y20/00H01L33/06
    • There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.
    • 提供了一种氮化物半导体器件,包括:n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层,所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层,其中所述有源层包括第一量子阱 层,与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层,以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层,并且具有能够使载体穿过其的厚度。
    • 5. 发明授权
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US07915607B2
    • 2011-03-29
    • US12403728
    • 2009-03-13
    • Seong Suk LeeHee Seok ParkJae Woong Han
    • Seong Suk LeeHee Seok ParkJae Woong Han
    • H01L29/06H01S5/00
    • H01S5/34333B82Y20/00H01S5/0218H01S5/3407H01S5/3416H01S5/342
    • A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.
    • 氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。 有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。 交替层叠的结构包括单元多层结构和厚的量子势垒阱。 单元多层结构包括第一量子阱层,形成的第二量子阱层,隧道量子势垒层和晶体质量改进层。 厚量子阱阱可以形成为与第一和第二量子阱层相邻,其厚度大于第一和第二量子阱层的厚度。
    • 6. 发明申请
    • NITRIDE SEMICONDUCTOR DEVICE
    • 氮化物半导体器件
    • US20100080257A1
    • 2010-04-01
    • US12403728
    • 2009-03-13
    • Seong Suk LEEHee Seok ParkJae Woong Han
    • Seong Suk LEEHee Seok ParkJae Woong Han
    • H01S5/34
    • H01S5/34333B82Y20/00H01S5/0218H01S5/3407H01S5/3416H01S5/342
    • A nitride semiconductor device include an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers. The active layer has an alternately-layered structure of a plurality of quantum well layers and a plurality of quantum barrier layers, each alternately stacked on each of the quantum well layers. The alternately-layered structure includes a unit multi-layer structure and a thick quantum barrier well. The unit multi-layer structure includes a first quantum well layer, a second quantum well layer formed, a tunneling quantum barrier layer and a crystal quality-improving layer. The thick quantum barrier well may be formed adjacent to the first and second quantum well layers, with a thickness thereof greater than that of the first and second quantum well layers.
    • 氮化物半导体器件包括n型氮化物半导体层; p型氮化物半导体层; 以及形成在n型和p型氮化物半导体层之间的有源层。 有源层具有交替层叠在每个量子阱层上的多个量子阱层和多个量子势垒层的交替层叠结构。 交替层叠的结构包括单元多层结构和厚的量子势垒阱。 单元多层结构包括第一量子阱层,形成的第二量子阱层,隧道量子势垒层和晶体质量改进层。 厚量子阱阱可以形成为与第一和第二量子阱层相邻,其厚度大于第一和第二量子阱层的厚度。
    • 9. 发明申请
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US20090045392A1
    • 2009-02-19
    • US11907169
    • 2007-10-10
    • Seong Eun ParkMin Ho KimJae Woong Han
    • Seong Eun ParkMin Ho KimJae Woong Han
    • H01L33/00
    • H01L33/06B82Y20/00H01L33/32H01S5/3407H01S5/3416H01S5/34333
    • There is provided a nitride semiconductor device including an active layer of a superlattice structure. The nitride semiconductor device including: a p-type nitride semiconductor layer; an n-type nitride semiconductor layer; and an active layer disposed between the p-type and n-type nitride layers, the active layer comprising a plurality of quantum barrier layers and quantum well layers deposited alternately on each other, wherein the active layer has a superlattice structure where the quantum barrier layer has a thickness for enabling a carrier injected from the p-type and n-type nitride semiconductor layers to be tunneled therethrough, and at least one of the quantum barrier layers has an energy band gap greater than another quantum barrier layer adjacent to the n-type nitride semiconductor layer.
    • 提供了包括超晶格结构的有源层的氮化物半导体器件。 氮化物半导体器件包括:p型氮化物半导体层; n型氮化物半导体层; 以及设置在所述p型和n型氮化物层之间的有源层,所述有源层包括彼此交替沉积的多个量子势垒层和量子阱层,其中所述有源层具有超晶格结构,其中所述量子势垒层 具有能够使从p型和n型氮化物半导体层注入的载流子穿过其中的厚度,并且至少一个量子势垒层具有比与n-型氮化物半导体层相邻的另一个量子势垒层更大的能带隙。 氮化物半导体层。