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1. 发明授权

US09323217B2 Metamaterial and dynamically reconfigurable hologram employing same 有权
标题翻译：超材料和使用相同的动态可重构全息图
公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/08 , G03H1/02 , G03H1/22 , G02B1/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译：负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。第一层中的纳米线在第二层中与纳米线的取向近似垂直。第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。横杆还包括在各层之间的纳米线交叉处的共振元件。每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。

2. 发明授权

US08283556B2 Nanowire-based device and array with coaxial electrodes 有权
标题翻译：基于纳米线的器件和具有同轴电极的阵列
公开(公告)号：US08283556B2
公开(公告)日：2012-10-09
申请号：US12247860
申请日：2008-10-08
申请人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
发明人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/109 , B82Y20/00 , G02B5/003 , H01L31/022425 , H01L31/035227 , H01L31/0543 , H01L31/072 , Y02E10/52
摘要： A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
摘要翻译：基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。该装置包括由圆周间隙分开的一对电极。纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。该阵列包括外部电极，其具有电池和内部电极的互连图案，每个电池单元与外部电极同轴地布置并与外部电极分开，并由其间隔开。纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。器件和阵列还包括电极之间的半导体结。

3. 发明申请

US20120223286A1 ELECTROFORMING-FREE NANOSCALE SWITCHING DEVICE 有权
标题翻译：无电极纳米开关器件
公开(公告)号：US20120223286A1
公开(公告)日：2012-09-06
申请号：US13259173
申请日：2009-07-30
申请人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
发明人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
IPC分类号： H01L45/00
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

4. 发明授权

US08244134B2 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US08244134B2
公开(公告)日：2012-08-14
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： H04J14/02 , H04B10/00
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

5. 发明授权

US08203171B2 Defective graphene-based memristor 有权
标题翻译：缺陷石墨烯忆阻器
公开(公告)号：US08203171B2
公开(公告)日：2012-06-19
申请号：US12754300
申请日：2010-04-05
申请人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Joshua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/74
CPC分类号： H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/734
摘要： A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.
摘要翻译：基于石墨烯的忆阻器包括第一电极，与第一电极相邻的有缺陷的石墨烯层，包含与缺陷石墨烯层相邻的多个离子的忆阻材料，与该阻滞材料相邻的第二电极以及产生电在第一和第二电极之间。在电场的影响下，忆阻材料中的离子在第二电极和缺陷石墨烯层之间形成离子传导通道。

6. 发明申请

US20110273755A1 DYNAMICALLY RECONFIGURABLE HOLOGRAMS 有权
标题翻译：动态可重构的HOLOGRAMS
公开(公告)号：US20110273755A1
公开(公告)日：2011-11-10
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
IPC分类号： G03H1/14 , H01L45/00 , B82Y99/00
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： Various embodiments of the present invention relate to systems that can be used as holograms and can be electronically controlled and dynamically reconfigured to generate three-dimensional motion picture images. In one embodiment, a dynamically reconfigurable hologram (1200) comprises a phase-control layer (1202) including a two-dimensional array of phase-modulation pixels (1212). The hologram also comprises an intensity-control layer (1204) including a two-dimensional array of intensity-control pixels (1214). One or more three-dimensional motion pictures can be produced by electronically addressing the individual phase-modulation pixels and intensity-control pixels in order to phase and control the intensity of light emanating from pixels of the hologram.
摘要翻译：本发明的各种实施例涉及可以用作全息图并且可以被电子控制和动态重新配置以产生三维运动图像图像的系统。在一个实施例中，动态可重构全息图（1200）包括包括相位调制像素的二维阵列（1212）的相位控制层（1202）。全息图还包括包括强度控制像素（1214）的二维阵列的强度控制层（1204）。可以通过电子地寻址各个相位调制像素和强度控制像素来产生一个或多个三维运动图像，以便相位和控制从全息图像素发出的光的强度。

7. 发明授权

US08054531B2 Micro-electro-mechanical systems and photonic interconnects employing the same 有权
标题翻译：微电子机械系统和使用它们的光子互连
公开(公告)号：US08054531B2
公开(公告)日：2011-11-08
申请号：US11823336
申请日：2007-06-26
申请人： Shih-Yuan Wang , R. Stanley Williams , Terrel L. Morris , Mihail Sigalas
发明人： Shih-Yuan Wang , R. Stanley Williams , Terrel L. Morris , Mihail Sigalas
IPC分类号： G02B26/00 , H04B10/00
CPC分类号： H04B10/801 , G02B26/0808 , G02B26/0825 , G02B26/0833
摘要： Various embodiments of the present invention are directed to micro-electro-mechanical systems and photonic interconnects employing micro-electro-mechanical systems. One micro-electro-mechanical system embodiment of the present invention includes a lens structure and an actuator. The lens structure includes a substantially transparent membrane having a flexible, curved surface, and a reservoir holding fluid that is fluidly coupled to the membrane. The actuator system is operably coupled to the reservoir in order to exert pressure on the fluid to change the curvature of the membrane and the focal point of the lens structure.
摘要翻译：本发明的各种实施例涉及使用微电子机械系统的微电子机械系统和光子互连。本发明的一个微电子机械系统实施例包括透镜结构和致动器。透镜结构包括具有柔性弯曲表面的基本上透明的膜，以及保持液体流体耦合到膜的储存器。致动器系统可操作地联接到储存器，以便对流体施加压力以改变膜的曲率和透镜结构的焦点。

8. 发明申请

US20110013913A1 IMAGE-ROTATION PRISMS AND OPTICAL INTERCONNECTS EMPLOYING THE SAME 有权
标题翻译：图像旋转原理和使用该图像的光学互连
公开(公告)号：US20110013913A1
公开(公告)日：2011-01-20
申请号：US12922098
申请日：2008-04-02
申请人： Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
发明人： Huei Pei Kuo , Robert G. Walmsley , Shih-Yuan Wang , Michael Renne Ty Tan , R. Stanley Williams
IPC分类号： H04B10/10 , G02B5/04 , H01S3/06
CPC分类号： G02B5/04 , G02B27/642 , H01S5/005 , H01S5/02236 , H01S5/02292 , H01S5/183 , H01S5/50 , H04B10/803
摘要： Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board.
摘要翻译：本发明的实施例涉及一系列图像旋转棱镜。每个图像旋转棱镜具有当图像旋转棱镜旋转时，通过图像旋转棱镜的图像以图像旋转棱镜的角速度的两倍旋转。本发明的实施例包括可用于板对板通信并使用图像旋转棱镜补偿光信号的任意轴向旋转和未对准的光学系统，并且可以用于将发射机输出的光信号引导到一个将其连接到位于相邻板上的检测器装置的特定检测器。

9. 发明授权

US07763978B2 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权
标题翻译：用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法
公开(公告)号：US07763978B2
公开(公告)日：2010-07-27
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译：本发明的各种实施例涉及三维横杆阵列。在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向纳米线在每个交叉列阵列的第三层纳米线中。

10. 发明授权

US07692179B2 Nanowire device with (111) vertical sidewalls and method of fabrication 失效
标题翻译：具有（111）垂直侧壁的纳米线器件和制造方法
公开(公告)号：US07692179B2
公开(公告)日：2010-04-06
申请号：US10888628
申请日：2004-07-09
申请人： M. Saif Islam , Yong Chen , Shih-Yuan Wang , R. Stanley Williams
发明人： M. Saif Islam , Yong Chen , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/06
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.
摘要翻译：纳米级器件和制造方法提供具有（111）垂直侧壁的纳米线。纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底，纳米线和在纳米线的相对端的电接触。该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层，以形成在半导体层中的一对岛之间延伸的纳米线。该方法还包括在一对岛上沉积导电材料以形成电触头。纳米pn二极管包括纳米线作为第一纳米电极，垂直堆叠在纳米线上的pn结，以及在pn结的（110）水平平面端上的第二纳米电极。可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。

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