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1. 发明授权

US07466407B2 Photonic crystal Raman sensors and methods including the same 有权
标题翻译：光子晶体拉曼传感器和方法包括相同
公开(公告)号：US07466407B2
公开(公告)日：2008-12-16
申请号：US11413877
申请日：2006-04-27
申请人： Sean M. Spillane , Raymond G. Beausoleil , Zhiyong Li , Duncan Stewart
发明人： Sean M. Spillane , Raymond G. Beausoleil , Zhiyong Li , Duncan Stewart
IPC分类号： G01J3/44
CPC分类号： G01J3/44 , G01N21/658
摘要： Raman-enhancing structures include a photonic crystal having a resonant cavity and at least one waveguide coupled to the resonant cavity. A nanostructure comprising a Raman-enhancing material is disposed proximate the resonant cavity of the photonic crystal. Raman-enhancing structures include a microdisk resonator, at least one waveguide coupled to the microdisk resonator, and a nanostructure comprising a Raman-enhancing material disposed proximate the microdisk resonator. Methods for performing Raman spectroscopy include generating radiation, guiding the radiation through a waveguide to a resonant cavity in a photonic crystal or a microdisk resonator, resonating the radiation in the resonant cavity or microdisk resonator, providing an analyte proximate the resonant cavity or microdisk resonator, subjecting the analyte to the resonating radiation, and detecting Raman scattered radiation.
摘要翻译：拉曼增强结构包括具有谐振腔和耦合到谐振腔的至少一个波导的光子晶体。包含拉曼增强材料的纳米结构设置在光子晶体的谐振腔附近。拉曼增强结构包括微盘谐振器，耦合到微盘谐振器的至少一个波导和包括靠近微盘谐振器设置的拉曼增强材料的纳米结构。用于执行拉曼光谱的方法包括产生辐射，将辐射通过波导引导到光子晶体或微盘谐振器中的谐振腔，谐振谐振腔或微盘谐振器中的辐射，提供靠近谐振腔或微盘谐振器的分析物，对分析物进行共振辐射，并检测拉曼散射辐射。

2. 发明授权

US07050659B1 Optically modulable photonic bandgap medium 有权
标题翻译：光学可调光子带隙介质
公开(公告)号：US07050659B1
公开(公告)日：2006-05-23
申请号：US11096670
申请日：2005-03-31
申请人： R. Stanley Williams , Raymond G. Beausoleil , Wei Wu , Zhiyong Li , Philip J. Kuekes
发明人： R. Stanley Williams , Raymond G. Beausoleil , Wei Wu , Zhiyong Li , Philip J. Kuekes
IPC分类号： G02F1/295
CPC分类号： G02F1/3511 , G02F1/0541 , G02F1/29 , G02F1/365 , G02F2202/13 , G02F2202/32
摘要： Controlling the propagation of electromagnetic radiation is described. A photonic bandgap medium is placed in the path of the electromagnetic radiation, the photonic bandgap medium comprising a photorefractive material. Control radiation is projected onto a surface of the photonic bandgap medium. The control radiation spatially varies a refractive index of the photorefractive material to control propagation of the electromagnetic radiation through the photonic bandgap medium.
摘要翻译：描述控制电磁辐射的传播。光子带隙介质放置在电磁辐射的路径中，光子带隙介质包括光折射材料。控制辐射投影到光子带隙介质的表面上。控制辐射在空间上改变光折射材料的折射率，以控制通过光子带隙介质的电磁辐射的传播。

3. 发明授权

US07289690B2 Photonic crystal device for fluid sensing 有权
标题翻译：用于流体感测的光子晶体装置
公开(公告)号：US07289690B2
公开(公告)日：2007-10-30
申请号：US11107098
申请日：2005-04-15
申请人： Zhiyong Li , Raymond G. Beausoleil , Philip J. Kuekes , Shih-Yuan Wang , M. Saif Islam
发明人： Zhiyong Li , Raymond G. Beausoleil , Philip J. Kuekes , Shih-Yuan Wang , M. Saif Islam
IPC分类号： G02B6/00
CPC分类号： G02B6/1225 , B82Y20/00 , G02B2006/1215
摘要： An apparatus for sensing at least one property of a fluid is described. A first photonic crystal structure and a second photonic crystal structure are defined in a dielectric slab. The first and second photonic crystal structures comprise differently patterned arrays of channels extending through the dielectric slab. The apparatus further comprises a fluid introduction device configured to introduce a common volume of the fluid into the channels of the first and second photonic crystal structures. The at least one property of the fluid can be sensed by measuring the propagation of radiation through the first and second photonic crystal structures.
摘要翻译：描述了用于感测流体的至少一个性质的装置。在介质板中限定第一光子晶体结构和第二光子晶体结构。第一和第二光子晶体结构包括延伸穿过电介质板的不同图案的通道阵列。该装置还包括流体引入装置，其构造成将共同体积的流体引入第一和第二光子晶体结构的通道中。可以通过测量通过第一和第二光子晶体结构的辐射的传播来感测流体的至少一个性质。

4. 发明授权

US07359048B2 Raman signal-enhancing structures and devices 有权
标题翻译：拉曼信号增强结构和器件
公开(公告)号：US07359048B2
公开(公告)日：2008-04-15
申请号：US11413910
申请日：2006-04-28
申请人： Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
发明人： Shih-Yuan Wang , R. Stanley Williams , Raymond G. Beausoleil , Theodore I. Kamins , Zhiyong Li , Wei Wu
IPC分类号： G01J3/44 , G01N21/65
CPC分类号： G01N21/658 , G01J3/44
摘要： Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
摘要翻译：拉曼系统包括辐射源，辐射检测器和拉曼器件或信号增强结构。拉曼器件包括耦合到空腔的可调谐谐振腔和拉曼信号增强结构。空腔包括第一反射构件，第二反射构件和设置在反射构件之间的电光材料。电光材料表现出响应于所施加的电场而变化的折射率。拉曼信号增强结构包括具有主表面的基本平坦的拉曼信号增强材料层，从主表面延伸的支撑结构和包括设置在支撑结构的端部上的拉曼信号增强材料的基本上平面的构件与拉曼信号增强材料层相对。支撑结构将平面构件的至少一部分与拉曼信号增强材料层分开小于约五十纳米的选定距离。

5. 发明申请

US20110266605A1 Memristive Transistor Memory 有权
标题翻译：忆阻晶体管内存
公开(公告)号：US20110266605A1
公开(公告)日：2011-11-03
申请号：US13142581
申请日：2009-01-30
申请人： Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
发明人： Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： G11C13/0002 , B82Y10/00 , H01L29/41758 , H01L29/517 , H01L29/685 , H01L29/775
摘要： A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).
摘要翻译：存储器件（100）包括在源极区域（132）和漏极区域（134）之间包括源极区域（132），漏极区域（134）和沟道区域（130）的半导体器件。覆盖沟道区的栅极结构包括覆盖在忆阻部分（120）上的忆阻部分（120）和导电部分（110）。

6. 发明申请

US20090002701A1 Electric-field-enhancement structure and detection apparatus using same 有权
公开(公告)号：US20090002701A1
公开(公告)日：2009-01-01
申请号：US11823281
申请日：2007-06-26
申请人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
发明人： David A. Fattal , Zhiyong Li , William M. Tong , Duncan Stewart , Jason Blackstock
IPC分类号： G01J3/44 , G02B6/34
CPC分类号： G02B6/1226 , B82Y15/00 , B82Y20/00 , G01N21/35 , G01N21/554 , G01N21/658 , G02B5/008
摘要： Various aspects of the present invention are directed to electric-field-enhancement structures and detection apparatuses that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure includes a substrate having a surface. The substrate is capable of supporting a planar mode having a planar-mode frequency. A plurality of nanofeatures is associated with the surface, and each of nanofeatures exhibits a localized-surface-plasmon mode having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.

7. 发明申请

US20050164412A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050164412A1
公开(公告)日：2005-07-28
申请号：US10995608
申请日：2004-11-22
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method for tailoring at least portions of an exposed non-planar layered surface of a conductive layer formed on a substrate having a first surface roughness to provide the exposed surface with a second surface roughness. The method includes: forming the conductive layer on the substrate; and tailoring at least portions of the exposed surface of the conductive layer in a plasma to at least smooth the exposed surface of the conductive layer, whereby the second surface roughness is essentially the same as the first surface roughness.
摘要翻译：一种用于调整形成在具有第一表面粗糙度的基底上的导电层的暴露的非平面层状表面的至少一部分以提供具有第二表面粗糙度的暴露表面的方法。该方法包括：在基板上形成导电层; 以及在等离子体中定制导电层的暴露表面的至少部分，以至少平滑导电层的暴露表面，由此第二表面粗糙度基本上与第一表面粗糙度相同。

8. 发明授权

US06855647B2 Custom electrodes for molecular memory and logic devices 失效
公开(公告)号：US06855647B2
公开(公告)日：2005-02-15
申请号：US10405294
申请日：2003-04-02
申请人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia A. Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/26
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

9. 发明申请

US20050026427A1 Custom electrodes for molecular memory and logic devices 审中-公开
标题翻译：用于分子存储器和逻辑器件的定制电极
公开(公告)号：US20050026427A1
公开(公告)日：2005-02-03
申请号：US10930062
申请日：2004-08-30
申请人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
发明人： Patricia Beck , Douglas Ohlberg , Duncan Stewart , Zhiyong Li
IPC分类号： H01L21/28 , G11C13/02 , H01L21/285 , H01L27/28 , H01L29/06 , H01L21/00
CPC分类号： H01L27/28 , G11C13/02 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.
摘要翻译：提供了一种用于制造分子电子器件的方法，该分子电子器件至少包括底部电极和底部电极上的分子开关膜。该方法包括通过以下工艺形成底部电极，该方法包括：清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。有利地，导电电极的性质包括：低或受控的氧化物形成（或可能钝化），高熔点，高体积弹性模量和低扩散。光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。定制的表面对于SAM沉积是更有用的。金属性质使分子具有高导电性。阻挡层可以被添加到器件堆叠，即在导电层上的Al 2 O 3。

10. 发明授权

US07924413B2 Nanowire-based photonic devices 有权
标题翻译：基于纳米线的光子器件
公开(公告)号：US07924413B2
公开(公告)日：2011-04-12
申请号：US12074133
申请日：2008-02-29
申请人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
发明人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
IPC分类号： G01N21/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/06 , H01L33/08 , H01S5/341 , H01S5/4031
摘要： Embodiments of the present invention are related to nanowire-based devices that can be configured and operated as modulators, chemical sensors, and light-detection devices. In one aspect, a nanowire-based device includes a reflective member, a resonant cavity surrounded by at least a portion of the reflective member, and at least one nanowire disposed within the resonant cavity. The nanowire includes at least one active segment selectively disposed along the length of the nanowire to substantially coincide with at least one antinode of light resonating within the cavity. The active segment can be configured to interact with the light resonating within the cavity.
摘要翻译：本发明的实施例涉及可以配置和操作为调制器，化学传感器和光检测装置的基于纳米线的器件。在一个方面，基于纳米线的器件包括反射部件，由反射部件的至少一部分包围的谐振腔以及设置在谐振腔内的至少一个纳米线。纳米线包括至少一个有源区段，沿着纳米线的长度选择性地设置，以与腔内谐振的至少一个光波导基本重合。活动段可以被配置为与腔内共振的光相互作用。

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