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    • 1. 发明授权
    • Photonic crystal Raman sensors and methods including the same
    • 光子晶体拉曼传感器和方法包括相同
    • US07466407B2
    • 2008-12-16
    • US11413877
    • 2006-04-27
    • Sean M. SpillaneRaymond G. BeausoleilZhiyong LiDuncan Stewart
    • Sean M. SpillaneRaymond G. BeausoleilZhiyong LiDuncan Stewart
    • G01J3/44
    • G01J3/44G01N21/658
    • Raman-enhancing structures include a photonic crystal having a resonant cavity and at least one waveguide coupled to the resonant cavity. A nanostructure comprising a Raman-enhancing material is disposed proximate the resonant cavity of the photonic crystal. Raman-enhancing structures include a microdisk resonator, at least one waveguide coupled to the microdisk resonator, and a nanostructure comprising a Raman-enhancing material disposed proximate the microdisk resonator. Methods for performing Raman spectroscopy include generating radiation, guiding the radiation through a waveguide to a resonant cavity in a photonic crystal or a microdisk resonator, resonating the radiation in the resonant cavity or microdisk resonator, providing an analyte proximate the resonant cavity or microdisk resonator, subjecting the analyte to the resonating radiation, and detecting Raman scattered radiation.
    • 拉曼增强结构包括具有谐振腔和耦合到谐振腔的至少一个波导的光子晶体。 包含拉曼增强材料的纳米结构设置在光子晶体的谐振腔附近。 拉曼增强结构包括微盘谐振器,耦合到微盘谐振器的至少一个波导和包括靠近微盘谐振器设置的拉曼增强材料的纳米结构。 用于执行拉曼光谱的方法包括产生辐射,将辐射通过波导引导到光子晶体或微盘谐振器中的谐振腔,谐振谐振腔或微盘谐振器中的辐射,提供靠近谐振腔或微盘谐振器的分析物, 对分析物进行共振辐射,并检测拉曼散射辐射。
    • 4. 发明授权
    • Raman signal-enhancing structures and devices
    • 拉曼信号增强结构和器件
    • US07359048B2
    • 2008-04-15
    • US11413910
    • 2006-04-28
    • Shih-Yuan WangR. Stanley WilliamsRaymond G. BeausoleilTheodore I. KaminsZhiyong LiWei Wu
    • Shih-Yuan WangR. Stanley WilliamsRaymond G. BeausoleilTheodore I. KaminsZhiyong LiWei Wu
    • G01J3/44G01N21/65
    • G01N21/658G01J3/44
    • Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
    • 拉曼系统包括辐射源,辐射检测器和拉曼器件或信号增强结构。 拉曼器件包括耦合到空腔的可调谐谐振腔和拉曼信号增强结构。 空腔包括第一反射构件,第二反射构件和设置在反射构件之间的电光材料。 电光材料表现出响应于所施加的电场而变化的折射率。 拉曼信号增强结构包括具有主表面的基本平坦的拉曼信号增强材料层,从主表面延伸的支撑结构和包括设置在支撑结构的端部上的拉曼信号增强材料的基本上平面的构件 与拉曼信号增强材料层相对。 支撑结构将平面构件的至少一部分与拉曼信号增强材料层分开小于约五十纳米的选定距离。
    • 9. 发明申请
    • Custom electrodes for molecular memory and logic devices
    • 用于分子存储器和逻辑器件的定制电极
    • US20050026427A1
    • 2005-02-03
    • US10930062
    • 2004-08-30
    • Patricia BeckDouglas OhlbergDuncan StewartZhiyong Li
    • Patricia BeckDouglas OhlbergDuncan StewartZhiyong Li
    • H01L21/28G11C13/02H01L21/285H01L27/28H01L29/06H01L21/00
    • H01L27/28G11C13/02H01L2924/0002H01L2924/00
    • A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.
    • 提供了一种用于制造分子电子器件的方法,该分子电子器件至少包括底部电极和底部电极上的分子开关膜。 该方法包括通过以下工艺形成底部电极,该方法包括:清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。 有利地,导电电极的性质包括:低或受控的氧化物形成(或可能钝化),高熔点,高体积弹性模量和低扩散。 光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。 定制的表面对于SAM沉积是更有用的。 金属性质使分子具有高导电性。 阻挡层可以被添加到器件堆叠,即在导电层上的Al 2 O 3。