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    • 5. 发明授权
    • Method of forming one or more nanopores for aligning molecules for molecular electronics
    • 形成一个或多个用于分子电子学分子的纳米孔的形成方法
    • US07922927B2
    • 2011-04-12
    • US11906819
    • 2007-10-03
    • Theodore I. KaminsYong ChenPatricia A. Beck
    • Theodore I. KaminsYong ChenPatricia A. Beck
    • C23F1/00
    • B82Y10/00B81C1/00031C03C15/00C03C17/001H01L21/0332H01L21/0337H01L21/31144
    • A technique is provided for forming a molecule or an array of molecules having a defined orientation relative to the substrate or for forming a mold for deposition of a material therein. The array of molecules is formed by dispersing them in an array of small, aligned holes (nanopores), or mold, in a substrate. Typically, the material in which the nanopores are formed is insulating. The underlying substrate may be either conducting or insulating. For electronic device applications, the substrate is, in general, electrically conducting and may be exposed at the bottom of the pores so that one end of the molecule in the nanopore makes electrical contact to the substrate. A substrate such as a single-crystal silicon wafer is especially convenient because many of the process steps to form the molecular array can use techniques well developed for semiconductor device and integrated-circuit fabrication.
    • 提供了一种用于形成具有相对于基底具有限定取向的分子或分子阵列的技术,或用于形成用于在其中沉积材料的模具。 分子阵列通过将它们分散在基底中的小的,对准的孔(纳米孔)或模具的阵列中而形成。 通常,形成纳米孔的材料是绝缘的。 底层衬底可以是导电的或绝缘的。 对于电子器件应用,基底通常是导电的并且可以在孔的底部暴露,使得纳米孔中的分子的一端与基底电接触。 诸如单晶硅晶片的衬底是特别方便的,因为形成分子阵列的许多工艺步骤可以使用用于半导体器件和集成电路制造的技术。
    • 10. 发明授权
    • Apparatus and fabrication process to reduce crosstalk in pirm memory array
    • 设备和制造过程,以减少pirm存储器阵列中的串扰
    • US06599796B2
    • 2003-07-29
    • US09896480
    • 2001-06-29
    • Ping MeiCarl P. TaussigPatricia A. Beck
    • Ping MeiCarl P. TaussigPatricia A. Beck
    • H01L218242
    • H01L27/1021
    • A cross point memory array is fabricated on a substrate with a plurality of memory cells, each memory cell including a diode and an anti-fuse in series. First and second conducting materials are disposed in separate strips on the substrate to form a plurality of first and second orthogonal electrodes with cross points. A plurality of semiconductor layers are disposed between the first and second electrodes to form a plurality of diodes between the cross points of the first and second electrodes. A passivation layer is disposed between the first electrodes and the diodes to form a plurality of anti-fuses adjacent to the diodes at the cross points of first and second electrodes. Portions of the diode layers are removed between the electrode cross points to form the plurality of memory cells with rows of trenches between adjacent memory cells to provide a barrier against crosstalk between adjacent memory cells. The trenches extend substantially to the depth of the n-doped layer in each diode. A process for fabricating the memory array includes formation of the anti-fuse above the diode in each memory cell and extending the passivation material into the trenches as the isolation material. Alternately, the diode may be formed above the anti-fuse, so that the trenches may be substantially more shallow. In addition, a process is provided for fabricating a cross point memory array having a plurality of memory cells on a substrate, each memory cell including a diode adjacent to a line electrode, including etching together in one fabrication step the boundaries extending along a first direction of each of the diodes and each of the line electrodes to form multiple rows of the diodes and the line electrodes extending in the first direction.
    • 在具有多个存储单元的衬底上制造交叉点存储器阵列,每个存储单元包括二极管和串联的反熔丝。 第一和第二导电材料被设置在基板上的分开的条带中以形成具有交叉点的多个第一和第二正交电极。 多个半导体层设置在第一和第二电极之间,以在第一和第二电极的交叉点之间形成多个二极管。 钝化层设置在第一电极和二极管之间,以在第一和第二电极的交叉点处形成与二极管相邻的多个抗熔丝。 二极管层的一部分在电极交叉点之间被去除以形成多个具有在相邻存储器单元之间的行沟槽的存储单元,以提供阻挡相邻存储单元之间串扰的屏障。 沟槽基本上延伸到每个二极管中n掺杂层的深度。 用于制造存储器阵列的工艺包括在每个存储单元中形成二极管上方的反熔丝,并将钝化材料作为隔离材料延伸到沟槽中。 或者,二极管可以形成在反熔丝上方,使得沟槽可以基本上更浅。 此外,提供了一种用于制造在衬底上具有多个存储器单元的交叉点存储器阵列的处理,每个存储单元包括与线电极相邻的二极管,包括在一个制造步骤中一起蚀刻沿着第一方向延伸的边界 的每个二极管和每个线电极以形成多行二极管和沿第一方向延伸的线电极。