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    • 1. 发明授权
    • Raman signal-enhancing structures and devices
    • 拉曼信号增强结构和器件
    • US07359048B2
    • 2008-04-15
    • US11413910
    • 2006-04-28
    • Shih-Yuan WangR. Stanley WilliamsRaymond G. BeausoleilTheodore I. KaminsZhiyong LiWei Wu
    • Shih-Yuan WangR. Stanley WilliamsRaymond G. BeausoleilTheodore I. KaminsZhiyong LiWei Wu
    • G01J3/44G01N21/65
    • G01N21/658G01J3/44
    • Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
    • 拉曼系统包括辐射源,辐射检测器和拉曼器件或信号增强结构。 拉曼器件包括耦合到空腔的可调谐谐振腔和拉曼信号增强结构。 空腔包括第一反射构件,第二反射构件和设置在反射构件之间的电光材料。 电光材料表现出响应于所施加的电场而变化的折射率。 拉曼信号增强结构包括具有主表面的基本平坦的拉曼信号增强材料层,从主表面延伸的支撑结构和包括设置在支撑结构的端部上的拉曼信号增强材料的基本上平面的构件 与拉曼信号增强材料层相对。 支撑结构将平面构件的至少一部分与拉曼信号增强材料层分开小于约五十纳米的选定距离。
    • 6. 发明授权
    • Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    • 形成单晶金属硅化物纳米线和所得纳米线结构的方法
    • US07829050B2
    • 2010-11-09
    • US11707601
    • 2007-02-13
    • Zhaoning YuZhiyong LiWei WuShih-Yuan WangR. Stanley Williams
    • Zhaoning YuZhiyong LiWei WuShih-Yuan WangR. Stanley Williams
    • C01B21/068
    • C30B29/10C30B29/60
    • Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline-metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.
    • 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中,公开了一种制造纳米线的方法。 在该方法中,形成许多纳米线前体部件。 每个纳米线前体构件包括基本单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中,公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。
    • 8. 发明申请
    • Methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures
    • 形成单晶金属硅化物纳米线和所得纳米线结构的方法
    • US20080193359A1
    • 2008-08-14
    • US11707601
    • 2007-02-13
    • Zhaoning YuZhiyong LiWei WuShih-Yuan WangR. Stanley Williams
    • Zhaoning YuZhiyong LiWei WuShih-Yuan WangR. Stanley Williams
    • C01B21/068
    • C30B29/10C30B29/60
    • Various embodiments of the present invention are directed to methods of forming single-crystal metal-silicide nanowires and resulting nanowire structures. In one embodiment of the present invention, a method of fabricating nanowires is disclosed. In the method, a number of nanowire-precursor members are formed. Each of the nanowire-precursor members includes a substantially single-crystal silicon region and a polycrystalline- metallic region. The substantially single-crystal silicon region and the polycrystalline-metallic region of each of the nanowire-precursor members is reacted to form corresponding substantially single-crystal metal-silicide nanowires. In another embodiment of the present invention, a nanowire structure is disclosed. The nanowire structure includes a substrate having an electrically insulating layer. A number of substantially single-crystal metal-silicide nanowires are positioned on the electrically insulating layer.
    • 本发明的各种实施方案涉及形成单晶金属硅化物纳米线和所得纳米线结构的方法。 在本发明的一个实施例中,公开了一种制造纳米线的方法。 在该方法中,形成许多纳米线前体部件。 每个纳米线前体构件包括大致单晶硅区域和多晶金属区域。 每个纳米线前体部件的大致单晶硅区域和多晶金属区域反应形成对应的基本单晶金属硅化物纳米线。 在本发明的另一个实施方案中,公开了一种纳米线结构。 纳米线结构包括具有电绝缘层的衬底。 大量单晶金属硅化物纳米线位于电绝缘层上。