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1. 发明申请

US20080054277A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20080054277A1
公开(公告)日：2008-03-06
申请号：US11923751
申请日：2007-10-25
申请人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
发明人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2226 , H01S5/2231 , H01S5/34326 , H01S5/3436
摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.
摘要翻译：半导体激光器件包括有源层，p型覆层和p型覆盖层。依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。第一层远离有源层，第二层靠近有源层。在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

2. 发明申请

US20070086498A1 Semiconductor laser having an improved window layer and method for the same 有权
标题翻译：具有改进的窗口层的半导体激光器及其方法
公开(公告)号：US20070086498A1
公开(公告)日：2007-04-19
申请号：US11472383
申请日：2006-06-22
申请人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
发明人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/20 , H01S5/22 , H01S5/2231 , H01S5/3072 , H01S5/34326
摘要： A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first clad layer formed thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than the second buffer layer. By such a structure, when the window layer is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.
摘要翻译：在GaAs衬底上堆叠第一缓冲层（GaAs），第二缓冲层（AlGaAs）和由GaAs或AlGaAs构成的扩散抑制层。该结构具有形成在其上的第一覆盖层。当AlGaAs用于扩散抑制层时，使AlGaAs的Al比小于第二缓冲层。通过这样的结构，当形成窗口层时，可以在扩散抑制层中降低杂质（Zn）的扩散速率，并且可以在第二缓冲层处停止杂质的扩散。

3. 发明授权

US07590158B2 Semiconductor laser having an improved window layer and method for the same 有权
标题翻译：具有改进的窗口层的半导体激光器及其方法
公开(公告)号：US07590158B2
公开(公告)日：2009-09-15
申请号：US11472383
申请日：2006-06-22
申请人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
发明人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/20 , H01S5/22 , H01S5/2231 , H01S5/3072 , H01S5/34326
摘要： A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.
摘要翻译：在GaAs衬底上堆叠第一缓冲层（GaAs），第二缓冲层（AlGaAs）和由GaAs或AlGaAs构成的扩散抑制层。该结构在其上具有第一覆层。当AlGaAs用于扩散抑制层时，使AlGaAs的Al比小于第二缓冲层。在这种结构中，当形成窗口区域时，可以在扩散抑制层中降低杂质（Zn）的扩散速率，并且可以在第二缓冲层处停止杂质的扩散。

4. 发明授权

US07173273B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07173273B2
公开(公告)日：2007-02-06
申请号：US10700047
申请日：2003-11-04
申请人： Harumi Nishiguchi , Tetsuya Yagi , Yasuaki Yoshida
发明人： Harumi Nishiguchi , Tetsuya Yagi , Yasuaki Yoshida
IPC分类号： H01L29/06 , H01L27/15 , H01L29/22
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/2216 , H01S5/34326 , H01S5/3436
摘要： A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-AlxGa1-xAs etching stopping layer, a p-AlGaInP second cladding layer with a stripe protrusion, and a p-GaAs contact layer. The portion, other than the stripe-form protrusion, of the p-AlGaInP second cladding layer is covered with an insulating film. The refractive index of the p-AlxGa1-xAs-ESL is nearly equal to the refractive index of each of the lower, first upper, and second upper cladding layers.
摘要翻译：半导体激光器件具有n-GaAs衬底。在n-GaAs衬底上，依次为n-AlGaInP包覆层，AlGaInP / GaInP MQW有源层，p-AlGaInP第一覆层，单层p-Al x Ga 作为蚀刻停止层，具有条纹突起的p-AlGaInP第二包覆层和p-GaAs接触层。 p-AlGaInP第二包层的除了条状突起之外的部分被绝缘膜覆盖。 p-Al x Ga 1-x As As ESL的折射率几乎等于下，第一上和第二上部包层中的每一个的折射率层。

5. 发明授权

US07804871B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07804871B2
公开(公告)日：2010-09-28
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

6. 发明授权

US07756180B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07756180B2
公开(公告)日：2010-07-13
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

7. 发明申请

US20080310473A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20080310473A1
公开(公告)日：2008-12-18
申请号：US12179627
申请日：2008-07-25
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/22 , H01S5/20
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的幅度（E2）提供大于0.0001的比E1 / E2 小于0.01。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

8. 发明授权

US07151004B2 Method of fabricating semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US07151004B2
公开(公告)日：2006-12-19
申请号：US10790199
申请日：2004-03-02
申请人： Yoshihisa Tashiro , Zempei Kawazu , Harumi Nishiguchi , Tetsuya Yagi , Akihiro Shima
发明人： Yoshihisa Tashiro , Zempei Kawazu , Harumi Nishiguchi , Tetsuya Yagi , Akihiro Shima
IPC分类号： H01L31/26
CPC分类号： H01S5/162 , H01S2302/00
摘要： In fabricating a semiconductor laser producing light with a wavelength of 770 to 810 nm, impurities are introduced into an MQW active layer near a light emitting facet of the laser to form a disordered region constituting a window layer. Pump light is applied to the window layer to generate photoluminescence whose wavelength λ dpl (nm) is measured. A blue shift amount λ bl (nm) is defined as the difference between the wavelength λ apl (nm) 0f photoluminescence generated by application of pump light to the active layer on the one hand, and the wavelength λ dpl (nm) of photoluminescence from the window layer under pump light irradiation on the other hand. The blue shift amount λ bl is referenced during the fabrication process in order to predict catastrophic optical damage levels of semiconductor lasers.
摘要翻译：在制造波长为770〜810nm的光的半导体激光器中，杂质被引入激光器的发光面附近的MQW有源层，形成构成窗口层的无序区域。将泵浦光施加到窗口层以产生其波长λdpl（nm）的光致发光。蓝色移位量λbl（nm）被定义为一方面通过将泵浦光施加到有源层而产生的波长λapl（nm）Of的光致发光和从一方面发光的波长λdpl（nm）另一方面在泵浦光照射下的窗口层。为了预测半导体激光器的灾难性光损伤水平，在制造过程中参考蓝移量λbl。

9. 发明授权

US07106775B2 Semiconductor laser devices 有权
标题翻译：半导体激光器件
公开(公告)号：US07106775B2
公开(公告)日：2006-09-12
申请号：US10791889
申请日：2004-03-04
申请人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
发明人： Hiromasu Matsuoka , Yasuhiro Kunitsugu , Harumi Nishiguchi , Tetsuya Yagi , Yasuyuki Nakagawa , Junichi Horie
IPC分类号： H01S5/00
CPC分类号： H01S5/028 , H01S5/0287
摘要： A low reflective film is formed of, in sequence from a side in contact with a laser chip, a first dielectric film of a refractive index n1 and a thickness d1, a second dielectric film of a refractive index n2 and a thickness d2, a third dielectric film of a refractive index n3 and a thickness d3, and a fourth dielectric film of a refractive index n4 and a thickness d4, specifically, aluminum oxide Al2O3 with a refractive index n1=1.638 is used for the first dielectric film, silicon oxide SiO2 with a refractive index n2=n4=1.489 for the second and fourth dielectric films, tantalum oxide Ta2O5 with a refractive index n3=2.063 for the third dielectric film, respectively, resulting in a semiconductor laser device with a reflectance which is stably controllable.
摘要翻译：低反射膜依次由与激光芯片接触的一侧形成，折射率n 1和厚度d 1的第一介电膜，折射率n 2的第二介电膜和厚度d 2，折射率n 3和厚度d 3的第三电介质膜和折射率n 4和厚度d 4的第四电介质膜，具体地，氧化铝Al 2 O 3，对于第一电介质膜使用折射率n 1 = 1.638的SUB> 3 ，第二和第四层的折射率n 2 = n 4 = 1.489的氧化硅SiO 2 介电膜，氧化钽Ta 2 O 3，折射率n 3 = 2.063，分别为第三绝缘膜，得到反射率为稳定可控

10. 发明申请

US20060098704A1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US20060098704A1
公开(公告)日：2006-05-11
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

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