专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050006636A1 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US20050006636A1
公开(公告)日：2005-01-13
申请号：US10912614
申请日：2004-08-04
申请人： Kyu Shim , Young Song , Sang Kim , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Jin Kang
IPC分类号： H01L29/12 , H01L31/102 , H01L33/08 , H01L33/18 , H01L21/00 , H01L33/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

2. 发明申请

US20050115946A1 Radical assisted oxidation apparatus 审中-公开
标题翻译：自由基辅助氧化装置
公开(公告)号：US20050115946A1
公开(公告)日：2005-06-02
申请号：US10817851
申请日：2004-04-06
申请人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
发明人： Kyu Shim , Young Song , Sang Kim , Nae Lee , Jin Kang
IPC分类号： H01L21/205 , F27B5/14 , F27B17/00 , H01L21/00 , H01L21/316 , H01L21/44
CPC分类号： H01L21/67115 , F27B17/0025 , H01L21/02126 , H01L21/02178 , H01L21/02236 , H01L21/02255 , H01L21/02271 , H01L21/31662
摘要： Provided is a radical assisted oxidation apparatus comprising a gas supply system, a radical source, a growth chamber, a load lock chamber, and a vacuum system, whereby it is possible to manufacture a high quality oxide film at a low temperature and improve a low frequency noise (1/f).
摘要翻译：提供了一种自由基辅助氧化装置，其包括气体供给系统，自由基源，生长室，负载锁定室和真空系统，由此可以在低温下制造高质量的氧化物膜并且提高低频率噪声（1 / f）。

3. 发明申请

US20050196925A1 Method of forming stress-relaxed SiGe buffer layer 审中-公开
标题翻译：形成应力松弛SiGe缓冲层的方法
公开(公告)号：US20050196925A1
公开(公告)日：2005-09-08
申请号：US11018647
申请日：2004-12-22
申请人： Sang Kim , Kyu Shim , Jin Kang
发明人： Sang Kim , Kyu Shim , Jin Kang
IPC分类号： H01L29/739
CPC分类号： H01L29/7782 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262 , H01L29/1054 , H01L29/165 , H01L29/78
摘要： Provided is a method of forming a stress-relaxed SiGe buffer layer on a silicon substrate using a reduced pressure chemical vapor deposition (RPCVD) technique. The method includes: forming a graded composition layer having a predetermined germanium composition gradient on a silicon substrate; forming and thermally annealing a first constant composition layer having a predetermined germanium composition on the graded composition layer; removing the first constant composition layer by a predetermined thickness to planarize a surface; and forming a second constant composition layer on the first constant composition layer to form a SiGe buffer layer having the graded composition layer and the constant composition layer. A strained silicon or SiGe channel can be formed in a silicon-based MOSFET device or a MODFET device by forming the stress-relaxed SiGe buffer layer that has a relatively thin thickness, a low surface dislocation density, and a surface roughness similar to bulk silicon, and thus a device having excellent channel conductivity and high frequency characteristics can be manufactured.
摘要翻译：提供了使用减压化学气相沉积（RPCVD）技术在硅衬底上形成应力松弛SiGe缓冲层的方法。该方法包括：在硅衬底上形成具有预定锗组分梯度的梯度组合物层; 在梯度组合物层上形成并热退火具有预定锗组合物的第一恒定组成层; 将第一恒定组成层除去预定厚度以使表面平坦化; 以及在第一恒定组成层上形成第二恒定组成层以形成具有渐变组成层和恒定组成层的SiGe缓冲层。可以通过形成具有较薄厚度，低表面位错密度和与体硅相似的表面粗糙度的应力松弛SiGe缓冲层，在硅基MOSFET器件或MODFET器件中形成应变硅或SiGe沟道，因此可以制造具有优异的沟道导电性和高频特性的器件。

4. 发明申请

US20060028279A1 Automatic gain control feedback amplifier 有权
标题翻译：自动增益控制反馈放大器
公开(公告)号：US20060028279A1
公开(公告)日：2006-02-09
申请号：US10995033
申请日：2004-11-23
申请人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
发明人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
IPC分类号： H03F3/08
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F3/50 , H03G3/3084
摘要： There is provided a feedback amplifier capable of easily controlling its dynamic range without a separate gain control signal generation circuit. The feedback amplifier includes an input terminal detecting an input voltage from input current, a feedback amplification unit amplifying the input voltage to generate an output signal, and an output terminal outputting a signal amplified by the feedback amplification unit. The feedback amplification unit includes a feedback circuit unit including a feedback resistor located between the input terminal and the output terminal, and a feedback transistor connected in parallel to the feedback resistor; and a bias circuit unit supplying a predetermined bias voltage to the feedback transistor of the feedback circuit unit and merged in the feedback amplification unit.
摘要翻译：提供了一种反馈放大器，其能够在没有单独的增益控制信号产生电路的情况下容易地控制其动态范围。反馈放大器包括检测来自输入电流的输入电压的输入端子，放大输入电压以产生输出信号的反馈放大单元以及输出由反馈放大单元放大的信号的输出端子。反馈放大单元包括反馈电路单元，该反馈电路单元包括位于输入端子和输出端子之间的反馈电阻器和与反馈电阻器并联连接的反馈晶体管; 以及偏置电路单元，向反馈电路单元的反馈晶体管提供预定的偏置电压并且合并在反馈放大单元中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式