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1. 发明授权

US5474022A Double crucible for growing a silicon single crystal 失效
标题翻译：用于生长硅单晶的双坩埚
公开(公告)号：US5474022A
公开(公告)日：1995-12-12
申请号：US420350
申请日：1995-04-11
申请人： Keisei Abe , Hisashi Furuya , Norihisa Machida , Yoshiaki Arai
发明人： Keisei Abe , Hisashi Furuya , Norihisa Machida , Yoshiaki Arai
IPC分类号： C30B15/00 , C30B15/12 , C30B35/00
CPC分类号： C30B29/06 , C30B15/12 , Y10T117/1052 , Y10T117/1056
摘要： There is provided a double crucible for growing a silicon single crystal in which the partition wall 17 in the shape of ring is concentric with the main crucible 6 in the shape of bottomed cylinder and the lower end of the partition wall 17 is fixed on the inner bottom of the main crucible, and thus the outer crucible 18 and the inner crucible 19 are formed inside the main crucible. The partition wall 17 is uniform in thickness and has introducing holes 20 in its lower part which link the outer crucible with the inner crucible. The partition wall is made so that the inner diameter of its lower part may be smaller than the inner diameter of its upper part. Supposing that A is the diameter of the partition wall at a level of molten silicon, h is a depth from the surface of the molten silicon to the introducing holes, V(out) is an amount of molten silicon stored in the outer crucible, and V(in) is an amount of molten stored in the inner crucible, the relation of D/A=1.5 to 3, 2h/A>1, and V(out)/V(in)=0.4 to 0.9, is satisfied. The invention reduces the number of coarse COPs of 0.3 .mu.m or greater in diameter generated after Sc-1 cleaning on the surface of a silicon wafer made of a single crystal bar grown without making larger in size the furnace of a silicon single crystal continuously growing apparatus.
摘要翻译：提供了一种用于生长硅单晶的双坩埚，其中环形分隔壁17与主坩埚6同心，为有底圆筒形，分隔壁17的下端固定在内部主坩埚的底部，因此外坩埚18和内坩埚19形成在主坩埚的内部。分隔壁17的厚度均匀，并且在其下部具有连接外坩埚与内坩埚的引入孔20。分隔壁被制成使得其下部的内径可以小于其上部的内径。假设A是在熔融硅水平处的分隔壁的直径，h是从熔融硅表面到引入孔的深度，V（out）是存储在外坩埚中的熔融硅的量， V（in）是存储在内坩埚中的熔融量，D / A = 1.5〜3,2h / A> 1，V（out）/ V（in）= 0.4〜0.9的关系成立。本发明减少了在不增加尺寸的单晶棒制成的硅晶片的表面上在Sc-1清洁之后产生的直径为0.3μm或更大的粗大COP的数量，硅单晶的炉连续生长仪器。

2. 发明授权

US5714267A Seed crystal of silicon single crystal 失效
标题翻译：硅单晶籽晶
公开(公告)号：US5714267A
公开(公告)日：1998-02-03
申请号：US626280
申请日：1996-04-04
申请人： Norihisa Machida , Hisashi Furuya
发明人： Norihisa Machida , Hisashi Furuya
IPC分类号： C30B15/22 , C30B15/36 , C30B29/06 , H01L21/208 , B32B9/04
CPC分类号： C30B15/22 , C30B15/36 , Y10T428/2457 , Y10T428/24942 , Y10T428/31
摘要： Thermal stress at a point portion of a seed crystal generated when the seed crystal is brought into contact with molten silicon liquid is relieved, thereby to prevent generation of dislocation, to curtail the time of a seed contraction process and to surely support a heavy weight single crystal. A seed crystal of a silicon single crystal used when the single crystal is grown from molten silicon liquid by a Czochralski method is formed to show the heat emissivity of 0.5 or higher and lower than 1.0 at the point portion of the seed crystal. The point portion of the seed crystal is either a part or the whole of the portion that makes contact with the molten silicon liquid or a portion that makes contact with the molten silicon liquid and a portion that makes no contact with the molten silicon liquid in the vicinity of that portion. It is desirable to form at least 16 lines per 1 cm.sup.2 of fine grooves each having a width of 0.3 to 1.0 mm on the surface of the point portion of the seed crystal, to form microscopic irregularity on the surface of the point portion by sandblasting the surface of the point portion of the seed crystal, or to form a SiO.sub.2 film on the surface of the point portion by applying oxidizing treatment to the surface of the point portion of the seed crystal.
摘要翻译：当晶种与熔融的硅液接触时产生的晶种的点部分的热应力被缓解，从而防止产生位错，缩短种子收缩过程的时间并确保支持重的单体水晶。形成通过切克劳斯基法从熔融硅液体生长单晶时使用的单晶硅晶种，以显示在晶种的点部处的发热率为0.5以上且低于1.0。晶种的点部分是与熔融硅液体接触的部分或与熔融硅液体接触的部分的一部分或全部，以及与熔融硅液体中的熔融硅液体不接触的部分该部分附近。期望在晶种的点部的表面上形成每1cm 2宽度为0.3〜1.0mm的细槽的至少16线，通过喷砂处理在点部的表面上形成微细凹凸或者通过对晶种的点部的表面进行氧化处理，在点部的表面上形成SiO 2膜。

3. 发明授权

US06663708B1 Silicon wafer, and manufacturing method and heat treatment method of the same 有权
标题翻译：硅晶片及其制造方法和热处理方法相同
公开(公告)号：US06663708B1
公开(公告)日：2003-12-16
申请号：US09667885
申请日：2000-09-22
申请人： Etsuro Morita , Takaaki Shiota , Yoshihisa Nonogaki , Yoshinobu Nakada , Hisashi Furuya , Hiroshi Koya , Jun Furukawa , Hideo Tanaka , Yuji Nakata
发明人： Etsuro Morita , Takaaki Shiota , Yoshihisa Nonogaki , Yoshinobu Nakada , Hisashi Furuya , Hiroshi Koya , Jun Furukawa , Hideo Tanaka , Yuji Nakata
IPC分类号： C30B3302
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： An ingot is manufactured by pulling it up such that V/Ga and V/Gb become 0.23 to 0.50 mm2/minute ° C., respectively, where V (mm/minute) is a pulling-up speed, and Ga (° C./mm) is and axial temperature gradient at the center of the ingot and Gb (° C./mm) is an axial temperature gradient at the edge of the ingot at temperatures in a range of 1,300° C. to a melting pointy of silicon. A wafer obtained by slicing the ingot is heat treated in a reductive atmosphere at temperature in a renge of 1,050° C. to 1,220° C. for 30 to 150 minutes. A silicon wafer free of OSF's, free of COP's, and substantially free of contamination such as Fe and of occurence of slip, is obtained.
摘要翻译：通过将其拉起来使得V / Ga和V / Gb分别变为0.23至0.50mm 2 /分钟℃来制造锭，其中V（mm /分钟）是拉升速度，Ga（ °C / mm）是在晶锭中心的轴向温度梯度，Gb（℃/ mm）是在锭的边缘处的温度在1300℃的温度下的轴向温度梯度到熔化硅尖锐通过将锭切片获得的晶片在1050℃至1220℃的温度下在还原气氛中热处理30至150分钟。没有OSF的硅晶片没有COP，并且基本上没有诸如Fe的污染和滑动的发生。

4. 发明授权

US5891245A Single crystal pulling method and apparatus for its implementation 失效
标题翻译：单晶拉拔方法及其实施方法
公开(公告)号：US5891245A
公开(公告)日：1999-04-06
申请号：US781842
申请日：1997-01-10
申请人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264
摘要翻译：采用单晶拉制法; 气密容器，用于将半导体熔体储存在气密容器内的双坩埚，其包括相互连接的外坩埚和内坩埚，以及从气密容器的上部悬挂的源材料供给管，颗粒状或粉末状的原料可以从其下端开口加入外坩埚内的半导体熔体，其中源材料与朝向封闭容器流动的惰性气体一起注入源材料供应管中，其特征在于所述在惰性气体的流量N（1 / min×cm 2）在0.0048P + 0.0264

5. 发明授权

US5858087A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5858087A
公开(公告)日：1999-01-12
申请号：US774184
申请日：1996-12-26
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/1052
摘要： The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11. The entry point of the source material 8 is as far as possible from the inner crucible 12, and close to the outer wall of the outer crucible 11, and hence the added source material 8 is melted rapidly by heat from a heater surrounding the outer crucible 11, and any gas bubbles generated as a result of the introduction of the source material 8, are unlikely infuse into the inner crucible 12.
摘要翻译：单晶拉制装置的主要结构涉及一个室（气密室），其内部是用于存储半导体熔体21的双坩埚3，其包括彼此连通的外坩埚11和内坩埚12，源材料供给管5从室的上部悬挂，并且定位成使得颗粒状原料8可以从其下端开口5a引入到外坩埚11和内坩埚12之间的半导体熔体21中。倾斜部分在内坩埚12侧的原料供给管5的下端部设置有用于将从下端开口5a排出的原料8引导到外坩埚11的侧壁附近的半导体熔融体21 源材料8的入口点尽可能远离内坩埚12，并且靠近外坩埚11的外壁，因此添加的源配合 rial 8通过来自围绕外坩埚11的加热器的热量迅速熔化，并且由于引入源材料8而产生的任何气泡不太可能注入内坩埚12中。

6. 发明授权

US5674756A Method for intrinsic-gettering silicon wafer 失效
标题翻译：本征吸收硅晶片的方法
公开(公告)号：US5674756A
公开(公告)日：1997-10-07
申请号：US502053
申请日：1995-07-14
申请人： Yuhki Satoh , Hisashi Furuya
发明人： Yuhki Satoh , Hisashi Furuya
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： To provide a silicon-wafer intrinsic-gettering method making it possible to obtain a desired intrinsic-gettering effect through a heat treatment of 1,000.degree. C. or lower and optionally change the thickness of a DZ layer. To obtain a silicon wafer with large intrinsic-gettering effectiveness, a silicon wafer containing oxygen precipitate nuclei is quickly heated from room temperature up to 800.degree. to 1,000.degree. C. and holding the state for 0.5 to 20 min is used. In addition to the above heat treatment step, it is preferable to further use the step of naturally cooling the silicon wafer up to room temperature and the step of heating the naturally-cooled silicon wafer from 500.degree. to 700.degree. C. up to 800.degree. to 1,100.degree. C. at a rate of 2.degree. to 10.degree. C./min and holding the silicon wafer at the temperature for 2 to 48 hr.
摘要翻译：提供硅晶片固有吸杂方法，使得可以通过1000℃或更低的热处理获得所需的固有吸收效果，并且可选地改变DZ层的厚度。为了获得具有大的固有吸收效果的硅晶片，将含有氧沉淀核的硅晶片从室温快速加热至800℃至1000℃，并使用0.5至20分钟的状态。除了上述热处理工序之外，优选进一步使用将硅晶片自然冷却至室温的步骤，以及将自然冷却的硅晶片从500℃加热至700℃至800℃的步骤至1100℃，速度为2℃至10℃/分钟，并将硅晶片在该温度下保持2至48小时。

7. 发明授权

US08529695B2 Method for manufacturing a silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US08529695B2
公开(公告)日：2013-09-10
申请号：US13097116
申请日：2011-04-29
申请人： Kazuhiro Harada , Hisashi Furuya
发明人： Kazuhiro Harada , Hisashi Furuya
IPC分类号： C30B13/02
CPC分类号： C30B35/007 , C30B15/203 , C30B29/06
摘要： Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.
摘要翻译：硅晶片制造方法包括用溶解的臭氧水溶液清洗多晶硅，用氟酸或氟酸和硝酸的混合酸清洗多晶硅，用超纯水冲洗多晶硅，熔化漂洗的多晶硅并拉出单晶硅熔液以固溶比为0.9以下，使拉晶单晶硅锭成块状或晶粒状单晶硅，用溶解臭氧水溶液清洗，用氟酸清洗或混合酸氟酸和硝酸，用超纯水冲洗单晶硅，在0.9以下的固化下重熔和拉拔单晶硅锭，并从单晶硅锭中形成硅晶片。

8. 发明申请

US20110263126A1 METHOD FOR MANUFACTURING A SILICON WAFER 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：US20110263126A1
公开(公告)日：2011-10-27
申请号：US13097117
申请日：2011-04-29
申请人： Kazuhiro HARADA , Hisashi Furuya , Yukio MUROI
发明人： Kazuhiro HARADA , Hisashi Furuya , Yukio MUROI
IPC分类号： H01L21/306
CPC分类号： C30B35/007 , C30B15/203 , C30B29/06
摘要： Method for manufacturing a silicon wafer free of point defect agglomerates by processes including adding pure carbon to raw material of polycrystalline silicon, melting to become a molten silicon liquid, pulling a single silicon crystal ingot comprising a perfect domain [P] from the molten silicon liquid by controlling a ratio of V/G (mm2/minute ° C.), lapping a silicon wafer cut out from the ingot, beveling the silicon wafer, chemical etching the beveled wafer so as to be removed damages of a surface of the wafer, and mirror-polishing the etched wafer, and the pure carbon is added to the raw material of polycrystalline silicon so that a density of carbon in the ingot becomes 1×1015 to 5×1015 atoms/cm3.
摘要翻译：通过包括向纯多晶硅原料中加入纯碳的方法制造无点缺陷聚集体的硅晶片，熔化成熔融硅液体，从熔融硅液体中拉出包含完整结构域[P]的单个硅晶锭通过控制V / G（mm2 /分钟°C）的比例，研磨从晶片切出的硅晶片，斜切硅晶片，化学蚀刻斜面晶片，以便去除晶片表面的损坏，并对蚀刻的晶片进行镜面抛光，将纯碳添加到多晶硅的原料中，使得锭中的碳的密度为1×1015〜5×1015原子/ cm3。

9. 发明授权

US5895527A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5895527A
公开(公告)日：1999-04-20
申请号：US791777
申请日：1997-01-29
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , Y10T117/10
摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.
摘要翻译：本发明涉及一种单晶拉制装置，包括：位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B，内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

10. 发明授权

US5797638A Hoist apparatus for annular member 失效
标题翻译：环形构件提升装置
公开(公告)号：US5797638A
公开(公告)日：1998-08-25
申请号：US822489
申请日：1997-03-24
申请人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
发明人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
IPC分类号： B66C1/54 , B66C1/66 , C30B15/00 , C30B15/14 , B66C1/62
CPC分类号： C30B15/14 , B66C1/54 , B66C1/66 , C30B15/00
摘要： An annular member hoist apparatus which lifts an annular member and carries and positions the annular member at a predetermined location by a carrier apparatus fitted with an elevator mechanism, including a suspension member suspended from the elevator mechanism, and a plurality of support arms which extend out radially in a horizontal plane from the suspension member. Each of the support arms has an engagement tip portion for supporting the annular member from inside the annular member.
摘要翻译：一种环形构件提升装置，其提升环形构件，并通过装有电梯机构的运载装置将环形构件运送并定位在预定位置，该升降机构包括悬挂在电梯机构上的悬挂构件，以及多个支撑臂，其伸出在悬挂构件的水平面中径向地放置。每个支撑臂具有用于从环形构件内部支撑环形构件的接合末端部分。

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