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1. 发明申请

US20110263126A1 METHOD FOR MANUFACTURING A SILICON WAFER 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：US20110263126A1
公开(公告)日：2011-10-27
申请号：US13097117
申请日：2011-04-29
申请人： Kazuhiro HARADA , Hisashi Furuya , Yukio MUROI
发明人： Kazuhiro HARADA , Hisashi Furuya , Yukio MUROI
IPC分类号： H01L21/306
CPC分类号： C30B35/007 , C30B15/203 , C30B29/06
摘要： Method for manufacturing a silicon wafer free of point defect agglomerates by processes including adding pure carbon to raw material of polycrystalline silicon, melting to become a molten silicon liquid, pulling a single silicon crystal ingot comprising a perfect domain [P] from the molten silicon liquid by controlling a ratio of V/G (mm2/minute ° C.), lapping a silicon wafer cut out from the ingot, beveling the silicon wafer, chemical etching the beveled wafer so as to be removed damages of a surface of the wafer, and mirror-polishing the etched wafer, and the pure carbon is added to the raw material of polycrystalline silicon so that a density of carbon in the ingot becomes 1×1015 to 5×1015 atoms/cm3.
摘要翻译：通过包括向纯多晶硅原料中加入纯碳的方法制造无点缺陷聚集体的硅晶片，熔化成熔融硅液体，从熔融硅液体中拉出包含完整结构域[P]的单个硅晶锭通过控制V / G（mm2 /分钟°C）的比例，研磨从晶片切出的硅晶片，斜切硅晶片，化学蚀刻斜面晶片，以便去除晶片表面的损坏，并对蚀刻的晶片进行镜面抛光，将纯碳添加到多晶硅的原料中，使得锭中的碳的密度为1×1015〜5×1015原子/ cm3。

2. 发明申请

US20110259259A1 METHOD FOR MANUFACTURING A SILICON WAFER 有权
标题翻译：制造硅波的方法
公开(公告)号：US20110259259A1
公开(公告)日：2011-10-27
申请号：US13097116
申请日：2011-04-29
申请人： Kazuhiro HARADA , Hisashi Furuya
发明人： Kazuhiro HARADA , Hisashi Furuya
IPC分类号： C30B15/00
CPC分类号： C30B35/007 , C30B15/203 , C30B29/06
摘要： Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.
摘要翻译：硅晶片制造方法包括用溶解的臭氧水溶液清洗多晶硅，用氟酸或氟酸和硝酸的混合酸清洗多晶硅，用超纯水冲洗多晶硅，熔化漂洗的多晶硅并拉出单晶硅熔液以固溶比为0.9以下，使拉晶单晶硅锭成块状或晶粒状单晶硅，用溶解臭氧水溶液清洗，用氟酸清洗或混合酸氟酸和硝酸，用超纯水冲洗单晶硅，在0.9以下的固化下重熔和拉拔单晶硅锭，并从单晶硅锭中形成硅晶片。

3. 发明申请

US20100147213A1 SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：用于拉丝硅单晶的二氧化硅玻璃结构及其制造方法
公开(公告)号：US20100147213A1
公开(公告)日：2010-06-17
申请号：US12632970
申请日：2009-12-08
申请人： Kazuhiro HARADA , Masaki MORIKAWA , Satoshi KUDO
发明人： Kazuhiro HARADA , Masaki MORIKAWA , Satoshi KUDO
IPC分类号： C30B15/10 , C03B9/00
CPC分类号： C03B19/095 , C30B15/10 , Y02P40/57 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.
摘要翻译：一种用于提拉由天然石英玻璃层形成的包括外层的硅单晶的石英玻璃坩埚和由合成石英玻璃层形成的内层，其中所述合成石英玻璃层包括形成在所述第一合成石英玻璃层中的第一合成石英玻璃层在坩埚底部的中心一定范围内的区域和形成在不包含第一合成石英玻璃层的形成区域的区域中的第二合成石英玻璃层，其中，第一合成石英玻璃层的厚度为0.5mm以上且1.5mm以下，第一合成石英玻璃层中包含的OH基浓度为100ppm以下。

4. 发明申请

US20110151660A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，加工基板和基板处理装置的方法
公开(公告)号：US20110151660A1
公开(公告)日：2011-06-23
申请号：US12974884
申请日：2010-12-21
申请人： Kazuhiro HARADA , Hideharu ITATANI , Sadayoshi HORII
发明人： Kazuhiro HARADA , Hideharu ITATANI , Sadayoshi HORII
IPC分类号： H01L21/3205 , B05C11/00
CPC分类号： C23C16/34 , C23C16/45525 , H01L21/28088 , H01L21/76834 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided. The method of manufacturing a semiconductor device includes: (a) loading a substrate into a processing container; (b) forming a metal film on the substrate using a chemical deposition method by supplying a processing gas into the processing container and exhausting the processing gas; (c) forming an aluminum nitride film on the metal film using the chemical deposition method by supplying an aluminum-containing source gas and a nitrogen-containing gas into the processing container and exhausting the aluminum-containing source gas and the nitrogen-containing gas; and (d) unloading the substrate from the processing container after forming the metal film and the aluminum nitride film, wherein the step (b) and the step (c) are continuously performed while maintaining an inside of the processing container to have an oxygen-free atmosphere.
摘要翻译：提供一种能够最小限度地防止由金属膜氧化引起的特性劣化的半导体器件的制造方法以及基板处理装置。制造半导体器件的方法包括：（a）将衬底装载到处理容器中; （b）使用化学沉积法在所述基板上形成金属膜，通过将处理气体供给到所述处理容器中并排出所述处理气体; （c）使用化学沉积法在所述金属膜上形成氮化铝膜，通过向所述处理容器中供应含铝源气体和含氮气体并排出所述含铝源气体和所述含氮气体; 以及（d）在形成金属膜和氮化铝膜之后，从处理容器中卸载基板，其中在保持处理容器的内部具有氧气流的同时连续执行步骤（b）和步骤（c）自由的气氛。

5. 发明申请

US20110104896A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20110104896A1
公开(公告)日：2011-05-05
申请号：US12903522
申请日：2010-10-13
申请人： Kazuhiro HARADA , Hideharu ITATANI , Sadayoshi HORII
发明人： Kazuhiro HARADA , Hideharu ITATANI , Sadayoshi HORII
IPC分类号： H01L21/443
CPC分类号： H01L21/28518 , C23C16/0218 , C23C16/06 , C23C16/45525 , C23C16/45561 , C23C16/54 , C23C16/56 , H01L21/28562
摘要： There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus, which are designed to prevent deterioration of the surface morphology of a Ni-containing film caused by dependence on an under layer, and to form a continuous film in a thin-film region. The method includes: loading a substrate into a process vessel; heating the substrate in the process vessel; pretreating the heated substrate by supplying a reducing gas into the process vessel and exhausting the reducing gas; removing the reducing gas remaining in the process vessel by supplying an inert gas into the process vessel and exhausting the inert gas; forming a nickel-containing film on the heated and pretreated substrate to a predetermined thickness by supplying a nickel-containing source into the process vessel and exhausting the nickel-containing source; and unloading the substrate from the process vessel.
摘要翻译：提供一种制造半导体器件和基板处理装置的方法，其被设计成防止由依赖于下层引起的含Ni膜的表面形态的劣化，并且形成薄膜中的连续膜，电影区。该方法包括：将基底装载到处理容器中; 加热处理容器中的衬底; 通过向处理容器中供应还原气体并排出还原气体来预处理加热的衬底; 通过向处理容器中供应惰性气体并排出惰性气体来除去残留在处理容器中的还原气体; 通过向所述处理容器中供应含镍源并排出所述含镍源，将所述加热和预处理的衬底上的含镍膜形成预定厚度; 并从处理容器卸载基材。

6. 发明申请

US20120152170A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20120152170A1
公开(公告)日：2012-06-21
申请号：US13341428
申请日：2011-12-30
申请人： Kazuhiro HARADA
发明人： Kazuhiro HARADA
IPC分类号： C23C16/455
CPC分类号： H01L21/28088 , C23C16/34 , C23C16/45523 , C23C16/45531 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.
摘要翻译：本发明的半导体器件的制造方法包括在基板上形成绝缘膜的步骤，以及在绝缘膜上形成高介电常数绝缘膜的步骤，以及在氮化铝上形成氮化铝膜的步骤高介电常数绝缘膜，其中在形成氮化铝钛膜的步骤中，交替地重复形成氮化铝膜和形成氮化钛膜，此时首先形成氮化铝膜和/ 或最后。

7. 发明申请

US20120045903A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，加工基板的方法和基板处理装置
公开(公告)号：US20120045903A1
公开(公告)日：2012-02-23
申请号：US13213434
申请日：2011-08-19
申请人： Kazuhiro HARADA , Hideharu ITATANI
发明人： Kazuhiro HARADA , Hideharu ITATANI
IPC分类号： H01L21/31 , C23C16/52 , C23C16/46 , C23C16/34 , C23C16/455
CPC分类号： H01L21/6719 , C23C16/34 , C23C16/56 , H01L21/67748 , H01L45/04 , H01L45/145 , H01L45/1616
摘要： Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.
摘要翻译：提供了一种在控制膜中的氧浓度的同时形成具有良好阶梯覆盖的氧化钽基膜的方法。该方法包括通过将包含钽和氮化剂的源气体供给到在引起化学气相沉积（CVD）反应的条件下容纳衬底的处理室中，在衬底上形成氮化钽层; 在氧化剂的氮化钽层的氧化反应不饱和的条件下，通过向处理室供给氧化剂来氧化氮化钽层; 在衬底上形成导电氮氧化钽膜，其中通过在衬底上交替地重复形成氮化钽层并多次氧化氮化钽层，其中相对于钽和氮具有化学计量不足的氧和氮。

8. 发明申请

US20100162947A1 SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF 有权
标题翻译：用于拉丝硅单晶的二氧化硅玻璃结构及其制造方法
公开(公告)号：US20100162947A1
公开(公告)日：2010-07-01
申请号：US12647634
申请日：2009-12-28
申请人： Kazuhiro HARADA , Satoshi KUDO
发明人： Kazuhiro HARADA , Satoshi KUDO
IPC分类号： C30B11/00
CPC分类号： C30B15/10
摘要： A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.
摘要翻译：用于提取硅单晶并由原料由天然二氧化硅制成的二氧化硅玻璃坩埚设置有从坩埚底部的中心到内表面至多0.5mm深的一定范围内的区域，其基本上不包括气泡，其中包括在从坩埚的底部的中心到距内表面的0.5mm深的一定范围内的区域中的浓度的平均值为30ppm以上和150ppm以下。在以这种方式形成坩埚底部的内层的情况下，防止了内表面的凹陷，并且气泡的产生减少。

9. 发明申请

US20090115364A1 ELECTRIC MOTOR DRIVING DEVICE, AND AIR CONDITIONER USING THE SAME 有权
标题翻译：电动马达驱动装置和使用该装置的空调器
公开(公告)号：US20090115364A1
公开(公告)日：2009-05-07
申请号：US11574016
申请日：2005-08-24
申请人： Kazuhiro HARADA
发明人： Kazuhiro HARADA
IPC分类号： H02H7/085
CPC分类号： H02P29/027 , H02M1/32 , H02P29/032
摘要： Disclosed is a motor-driving device capable of protecting an inverter from breakdown. First current-protecting section retains reference voltage value Vref1 as a preset value. If the current to be fed into inverter exceeds value Vref1, first current-protecting section shuts off the output of driver and outputs a first warning to driving-signal generator to shut off generating driving signals. This protects inverter from breakdown. Second current-protection section retains reference voltage value Vref2 that is smaller than value Vref1. If the detected current exceeds value Vref2, second current-protecting section outputs a second warning. Receiving the second warning, driving-signal generator immediately stops generating driving signals; however, it resumes output of driving signals after no longer receiving second warning. The structure above protects inverter from breakdown without frequent stops of brushless motor.
摘要翻译：公开了一种能够保护逆变器不发生故障的电动机驱动装置。第一电流保护部分将参考电压值Vref1保持为预设值。如果要馈送到逆变器的电流超过值Vref1，则第一电流保护部分切断驱动器的输出，并向驱动信号发生器输出第一警告以切断产生的驱动信号。这样可以防止变频器故障。第二电流保护部分保持小于值Vref1的参考电压值Vref2。如果检测到的电流超过值Vref2，则第二电流保护部输出第二警告。接收到第二个警告，驱动信号发生器立即停止产生驾驶信号; 然而，在不再接收到第二个警告之后，它恢复驱动信号的输出。上述结构可防止变频器故障，无需无刷电机频繁停机。

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