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1. 发明授权

US06812619B1 Resonator structure and a filter comprising such a resonator structure 有权
标题翻译：谐振器结构和包括这种谐振器结构的滤波器
公开(公告)号：US06812619B1
公开(公告)日：2004-11-02
申请号：US10031579
申请日：2002-01-17
申请人： Jyrki Kaitila , Markku Ylilammi , Juha Ellä
发明人： Jyrki Kaitila , Markku Ylilammi , Juha Ellä
IPC分类号： H01I4108
CPC分类号： H03H9/173 , H03H9/132
摘要： A resonator structure (1200, 1300, 1400), where a certain wave mode is piezoelectrically excitable, comprises at least two conductor layers (110, 120) and at least one piezoelectric layer (110) in between the conductor layers, said conductor layers and piezoelectric layer extending over a first area of the resonator structure, which first area is a piezoelectrically excitable area of the resonator structure. The resonator structure is characterized in that it comprises a frame-like zone (2, 4) confining a center area (3) within the first area, a cut-off frequency of the piezoelectrically excited wave mode in the layer structure of the frame-like zone is different from that in the layer structure of the center area, and width of the frame-like zone and acoustical properties of the layer structure in the frame-like zone are arranged so that displacement relating to the piezoelectrically excited strongest resonance mode is substantially uniform in the center area of the resonator.
摘要翻译：一种其中一定波模式是可压电激发的谐振器结构（1200,1300,1400）包括至少两个导体层（110,120）和至少一个压电层（110），位于导体层之间，所述导体层和压电层在谐振器结构的第一区域上延伸，该第一区域是谐振器结构的压电可激发区域。谐振器结构的特征在于，其包括限制第一区域内的中心区域（3）的框架状区域（2,4），框架状区域的层结构中的压电激发波模式的截止频率，与框状区域的层结构不同，框状区域的框状宽度和层结构的声学特性被布置成使得与压电激发的最强谐振模式有关的位移为在谐振器的中心区域基本均匀。

2. 发明授权

US06788170B1 Resonator structure having a dampening material and a filter having such a resonator structure 有权
标题翻译：具有阻尼材料的谐振器结构和具有这种谐振器结构的滤波器
公开(公告)号：US06788170B1
公开(公告)日：2004-09-07
申请号：US10031533
申请日：2002-04-16
申请人： Jyrki A. Kaitila , Markku Ylilammi , Juha Ellä
发明人： Jyrki A. Kaitila , Markku Ylilammi , Juha Ellä
IPC分类号： H03H954
CPC分类号： H03H9/173 , H03H9/132
摘要： Resonator structure (600, 800, 810, 820) comprises two conductor layers (110, 120) and a piezoelectric layer (100) in between the conductor layers, and said conductor layers and piezoelectric layer extend over a first area of the resonator structure, which first area is a piezoelectrically excitable area of the resonator structure. The resonator structure is characterized in that it is arranged to have a zone (603, 801, 803, 804), which confines a center area (604, 802) within the first area of the resonator, and the layer structure in the zone is arranged to be such that piezoelectrically excited vibrations are dampened more effectively in the zone than in the center area.
摘要翻译：谐振器结构（600,800,810,820）在导体层之间包括两个导体层（110,120）和压电层（100），并且所述导体层和压电层在谐振器结构的第一区域上延伸，该第一区域是谐振器结构的压电可兴奋区域。谐振器结构的特征在于，其布置成具有将中心区域（604,802）限定在谐振器的第一区域内的区域（603,801,803,804），并且该区域中的层结构是布置成使得在区域中比在中心区域更有效地抑制压电激发的振动。

3. 发明授权

US06521100B2 Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method 失效
标题翻译：根据该方法制造的压电薄膜和体声波谐振器的制造方法
公开(公告)号：US06521100B2
公开(公告)日：2003-02-18
申请号：US09776170
申请日：2001-02-02
申请人： Jyrki Molarius , Markku Ylilammi
发明人： Jyrki Molarius , Markku Ylilammi
IPC分类号： C23C1435
CPC分类号： C23C14/3492 , C23C14/086 , C23C14/35 , C23C14/54 , H03H3/02 , Y10T29/42
摘要： A method of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film on a surface of some other material, the method including the step of: performing successive sputtering cycles, each cycle including sputtering at a first gas pressure so as to achieve a predetermined first thickness, and sputtering at a second, different gas pressure, so as to obtain a predetermined second thickness. The thin film so deposited has an average stress intermediate between the first stress and the second stress, an average stress that can be made to be approximately equal to a predetermined intermediate stress by a judicious choice of the time for sputtering at each of the two pressures. Usually, the thin film is built up incrementally, using many successive cycles of sputtering at first the first gas pressure and then the second gas pressure.
摘要翻译：一种用于制造包括材料薄膜的器件的方法，使用磁控溅射将薄膜沉积在一些其它材料的表面上的方法，所述方法包括以下步骤：执行连续的溅射循环，每个循环包括溅射第一气体压力以达到预定的第一厚度，并以第二不同的气体压力进行溅射，以获得预定的第二厚度。如此沉积的薄膜在第一应力和第二应力之间具有中间的平均应力，平均应力可以通过明智地选择两个压力中的每一个处的溅射时间而被制成大约等于预定的中间应力。通常，薄膜是逐渐建立的，首先使用多个连续的溅射循环来进行第一气体压力，然后是第二气体压力。

4. 发明授权

US08925163B2 Method of manufacturing laterally coupled BAW thin films 有权
标题翻译：制造横向耦合的BAW薄膜的方法
公开(公告)号：US08925163B2
公开(公告)日：2015-01-06
申请号：US13272390
申请日：2011-10-13
申请人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
发明人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
IPC分类号： H04R17/00 , H03H9/02 , H03H3/02 , H03H9/56 , H03H9/00
CPC分类号： H03H9/0095 , H03H3/02 , H03H9/02125 , H03H9/562 , Y10T29/42 , Y10T29/49002 , Y10T29/49155
摘要： The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译：本发明描述了一种基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器的制造方法。在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电膜的相对侧上，则可以实现从不平衡到平衡电信号的转换。制造过程比基于垂直声耦合的相应部件更简单。该器件还可实现阻抗变换。

5. 发明申请

US20120086523A1 Method of manufacturing laterally coupled BAW thin films 有权
标题翻译：制造横向耦合的BAW薄膜的方法
公开(公告)号：US20120086523A1
公开(公告)日：2012-04-12
申请号：US13272390
申请日：2011-10-13
申请人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
发明人： Johanna Meltaus , Tuomas Pensala , Markku Ylilammi , Tommi Riekkinen , Tomi Mattila
IPC分类号： H03H9/54 , H01L41/22
CPC分类号： H03H9/0095 , H03H3/02 , H03H9/02125 , H03H9/562 , Y10T29/42 , Y10T29/49002 , Y10T29/49155
摘要： The invention describes a manufacturing method for an acoustic balanced-unbalanced (balun) or balanced-balanced thin-film BAW filter based on lateral acoustic coupling. In laterally acoustically coupled thin-film BAW filters (LBAW) one can realize transformation from unbalanced to balanced electric signal if the electrodes of the balanced port are placed on the opposite sides of the piezoelectric film. The manufacturing process is simpler than in the corresponding component based on vertical acoustical coupling. The device can also realize impedance transformation.
摘要翻译：本发明描述了一种基于横向声耦合的声平衡不平衡（balun）或平衡平衡薄膜BAW滤波器的制造方法。在横向声耦合薄膜BAW滤波器（LBAW）中，如果平衡端口的电极放置在压电膜的相对侧上，则可以实现从不平衡到平衡电信号的转换。制造过程比基于垂直声耦合的相应部件更简单。该器件还可实现阻抗变换。

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