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1. 发明授权

US06521100B2 Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method 失效
标题翻译：根据该方法制造的压电薄膜和体声波谐振器的制造方法
公开(公告)号：US06521100B2
公开(公告)日：2003-02-18
申请号：US09776170
申请日：2001-02-02
申请人： Jyrki Molarius , Markku Ylilammi
发明人： Jyrki Molarius , Markku Ylilammi
IPC分类号： C23C1435
CPC分类号： C23C14/3492 , C23C14/086 , C23C14/35 , C23C14/54 , H03H3/02 , Y10T29/42
摘要： A method of use in fabricating a device comprising a thin film of material, the fabrication using magnetron sputtering to deposit the thin film on a surface of some other material, the method including the step of: performing successive sputtering cycles, each cycle including sputtering at a first gas pressure so as to achieve a predetermined first thickness, and sputtering at a second, different gas pressure, so as to obtain a predetermined second thickness. The thin film so deposited has an average stress intermediate between the first stress and the second stress, an average stress that can be made to be approximately equal to a predetermined intermediate stress by a judicious choice of the time for sputtering at each of the two pressures. Usually, the thin film is built up incrementally, using many successive cycles of sputtering at first the first gas pressure and then the second gas pressure.
摘要翻译：一种用于制造包括材料薄膜的器件的方法，使用磁控溅射将薄膜沉积在一些其它材料的表面上的方法，所述方法包括以下步骤：执行连续的溅射循环，每个循环包括溅射第一气体压力以达到预定的第一厚度，并以第二不同的气体压力进行溅射，以获得预定的第二厚度。如此沉积的薄膜在第一应力和第二应力之间具有中间的平均应力，平均应力可以通过明智地选择两个压力中的每一个处的溅射时间而被制成大约等于预定的中间应力。通常，薄膜是逐渐建立的，首先使用多个连续的溅射循环来进行第一气体压力，然后是第二气体压力。

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