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    • 2. 发明授权
    • Resonator structure and a filter comprising such a resonator structure
    • 谐振器结构和包括这种谐振器结构的滤波器
    • US06812619B1
    • 2004-11-02
    • US10031579
    • 2002-01-17
    • Jyrki KaitilaMarkku YlilammiJuha Ellä
    • Jyrki KaitilaMarkku YlilammiJuha Ellä
    • H01I4108
    • H03H9/173H03H9/132
    • A resonator structure (1200, 1300, 1400), where a certain wave mode is piezoelectrically excitable, comprises at least two conductor layers (110, 120) and at least one piezoelectric layer (110) in between the conductor layers, said conductor layers and piezoelectric layer extending over a first area of the resonator structure, which first area is a piezoelectrically excitable area of the resonator structure. The resonator structure is characterized in that it comprises a frame-like zone (2, 4) confining a center area (3) within the first area, a cut-off frequency of the piezoelectrically excited wave mode in the layer structure of the frame-like zone is different from that in the layer structure of the center area, and width of the frame-like zone and acoustical properties of the layer structure in the frame-like zone are arranged so that displacement relating to the piezoelectrically excited strongest resonance mode is substantially uniform in the center area of the resonator.
    • 一种其中一定波模式是可压电激发的谐振器结构(1200,1300,1400)包括至少两个导体层(110,120)和至少一个压电层(110),位于导体层之间,所述导体层和 压电层在谐振器结构的第一区域上延伸,该第一区域是谐振器结构的压电可激发区域。 谐振器结构的特征在于,其包括限制第一区域内的中心区域(3)的框架状区域(2,4),框架状区域的层结构中的压电激发波模式的截止频率, 与框状区域的层结构不同,框状区域的框状宽度和层结构的声学特性被布置成使得与压电激发的最强谐振模式有关的位移为 在谐振器的中心区域基本均匀。
    • 5. 发明授权
    • Method and apparatus for restraining temperature induced deformation of a piezoelectric device
    • 抑制压电元件的温度变形的方法和装置
    • US06703761B2
    • 2004-03-09
    • US10036688
    • 2001-12-21
    • Christopher F. GallmeyerL. Glenn Waterfield
    • Christopher F. GallmeyerL. Glenn Waterfield
    • H01I4108
    • H01L41/0926H01L41/042
    • Apparatuses and methods for controlling the temperature induced deformation of a piezoelectric device. A piezoelectric device receives an activation signal and displaces in a first direction for a first predetermined distance as a function of the activation signal. The piezoelectric device also displaces in a second direction as a function of a change in temperature of the piezoelectric device. A stop is located a second predetermined distance from the piezoelectric device. The stop prevents the displacement of the piezoelectric device in the second direction beyond a third predetermined distance. A charge redistributing device is coupled with the piezoelectric device. The charge redistributing device redistributes charge on the piezoelectric device due to the temperature change to relieve internal electric fields of the piezoelectric device due to temperature induced deformation of the piezoelectric device.
    • 用于控制压电装置的温度诱导变形的装置和方法。 压电装置接收激活信号,并作为激活信号的函数在第一方向上移位第一预定距离。 压电装置还可以作为压电装置的温度变化的函数在第二方向上移位。 止动件位于离压电装置第二预定距离处。 止动件防止压电装置在第二方向上的位移超过第三预定距离。 电荷再分配装置与压电装置耦合。 电荷再分配装置由于温度变化而重新分布在压电装置上的电荷,以缓解由于压电装置的温度引起的变形而导致的压电装置的内部电场。
    • 6. 发明授权
    • Surface acoustic wave device and communication apparatus
    • 声表面波装置及通信装置
    • US06703760B2
    • 2004-03-09
    • US10090805
    • 2002-03-06
    • Michio Kadota
    • Michio Kadota
    • H01I4108
    • H03H9/6446H03H9/0028H03H9/008H03H9/02622H03H9/02669H03H9/02716H03H9/02795H03H9/02818H03H9/25H03H9/6433
    • A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer, a second interdigital transducer and a first coupler. The first and second interdigital transducers are arranged on the surface of the piezoelectric substrate such that the second interdigital transducer is offset from a direction in which a surface acoustic wave excited by the first IDT propagates. A first edge is provided on the piezoelectric substrate to reflect the excited surface acoustic wave to the first and second interdigital transducers, and the first coupler having a plurality of metal strips on the piezoelectric substrate is provided between the first edge of the piezoelectric substrate and at least one of the first and second interdigital transducers so as to be adjacent to the first and second interdigital transducers. The surface acoustic wave device operates using a shear horizontal surface wave.
    • 表面声波装置包括压电基片,第一叉指换能器,第二叉指换能器和第一耦合器。 第一和第二叉指换能器布置在压电基片的表面上,使得第二叉指式换能器偏离由第一IDT激发的表面声波传播的方向。 在压电基板上设置第一边缘以将激发的表面声波反射到第一和第二叉指式换能器,并且在压电基板上具有多个金属条的第一耦合器设置在压电基板的第一边缘和 第一和第二叉指换能器中的至少一个以便与第一和第二叉指换能器相邻。 表面声波装置使用剪切水平表面波进行操作。