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1. 发明授权

US08409360B2 Cleaning method for a process of liquid immersion lithography 有权
标题翻译：液浸光刻工艺的清洗方法
公开(公告)号：US08409360B2
公开(公告)日：2013-04-02
申请号：US12662760
申请日：2010-05-03
申请人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
发明人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
IPC分类号： B08B9/00 , C11D1/66
CPC分类号： C11D1/72 , C11D1/667 , C11D1/722 , C11D3/43 , C11D11/0047 , G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production.Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
摘要翻译：问题：提供具有优良倾斜能力的清洗液和清洗方法。在液浸光刻的过程中，它们可以防止由光致抗蚀剂释放到光曝光装置上的组分引起的损伤; 废物处理容易; 用于液浸光刻介质的清洁液的替代效率高，并且降低了生产成本，而不会降低半导体生产中的生产量。解决方法：液浸光刻工艺中用于清洗曝光装置的清洗液，其包含至少5质量％的含有至少一种选自乙烯氧基，丙烯氧基和聚甘油基团和余量的水; 和使用它的清洁方法。

2. 发明申请

US20110056511A1 Cleaning liquid and a cleaning method 有权
标题翻译：清洗液和清洁方法
公开(公告)号：US20110056511A1
公开(公告)日：2011-03-10
申请号：US12662760
申请日：2010-05-03
申请人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
发明人： Jun Koshiyama , Jiro Yokoya , Tomoyuki Hirano , Hiromitsu Tsuji
IPC分类号： B08B7/00 , C11D3/43 , C11D3/44
CPC分类号： C11D1/72 , C11D1/667 , C11D1/722 , C11D3/43 , C11D11/0047 , G03F7/2041 , G03F7/70341 , G03F7/70925
摘要： Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production.Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.
摘要翻译：问题：提供具有优良倾斜能力的清洗液和清洗方法。在液浸光刻的过程中，它们可以防止由光致抗蚀剂释放到光曝光装置上的组分引起的损伤; 废物处理容易; 用于液浸光刻介质的清洁液的替代效率高，并且降低了生产成本，而不会降低半导体生产中的生产量。解决方法：在液浸光刻工艺中用于清洗曝光装置的清洗液，其包含至少5质量％的含有至少一种选自乙烯氧基，丙烯氧基和聚甘油基团和余量的水; 和使用它的清洁方法。

3. 发明申请

US20110061678A1 Cleaning liquid for lithography and a cleaning method using it for photoexposure devices 有权
公开(公告)号：US20110061678A1
公开(公告)日：2011-03-17
申请号：US12801529
申请日：2010-06-14
申请人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
发明人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
IPC分类号： B08B7/00 , C11D3/44
CPC分类号： C11D3/43 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/18 , C11D3/181 , C11D3/182 , C11D3/184 , C11D3/188 , G03F7/2041 , G03F7/70341 , G03F7/70925 , G03F7/70983
摘要： Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.

4. 发明授权

US08058220B2 Cleaning liquid for lithography and a cleaning method using it for photoexposure devices 有权
标题翻译：用于光刻的清洁液和使用其进行曝光装置的清洁方法
公开(公告)号：US08058220B2
公开(公告)日：2011-11-15
申请号：US12801529
申请日：2010-06-14
申请人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
发明人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
IPC分类号： C11D7/50
CPC分类号： C11D3/43 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/18 , C11D3/181 , C11D3/182 , C11D3/184 , C11D3/188 , G03F7/2041 , G03F7/70341 , G03F7/70925 , G03F7/70983
摘要： Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.
摘要翻译：问题：提供用于光刻的清洗液和使用其进行曝光的清洁装置。在液浸式光刻工序中，清洗液可以有效地清除被光致抗蚀剂除去的成分所污染的光曝光装置部位（特别是光学透镜部件），除去污染物，另外清洗液的废弃处理容易，用于液浸光刻介质的清洁液的替代效率高，并且清洁液体不会降低半导体生产中的生产量。解决方案：一种用于在液浸光刻工艺中用于清洁曝光装置的光刻用清洁液体，其包括填充曝光装置的光学透镜部件和安装在晶片台上的光曝光对象之间的空间，用用于液浸光刻的介质，所述清洗液包含（a）表面活性剂，（b）烃溶剂和（c）水; 以及将其用于曝光装置的清洁方法。

5. 发明申请

US20130189618A1 METHOD OF FORMING RESIST PATTERN 有权
标题翻译：形成电阻图案的方法
公开(公告)号：US20130189618A1
公开(公告)日：2013-07-25
申请号：US13614017
申请日：2012-09-13
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Hideto Nito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/20 , G03F7/004 , G03F7/0045 , G03F7/0397 , G03F7/38
摘要： A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中将包含基底组分，光碱产生剂组分和酸供应组分的抗蚀剂组合物施加到基底上以形成抗蚀剂膜; 步骤（2），其中抗蚀剂膜经受曝光而不经受预烘烤; 步骤（3），其中在步骤（2）之后进行烘烤，使得在抗蚀剂膜的暴露部分，曝光时由光产生剂组分产生的碱和源自酸供应组分的酸被中和，并且在抗蚀剂膜的未曝光部分，通过来自酸供应成分的酸的作用，碱成分在碱性显影液中的溶解度增加; 和步骤（4），其中抗蚀剂膜经受碱显影，从而形成负色调抗蚀剂图案。

6. 发明授权

US08486605B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08486605B2
公开(公告)日：2013-07-16
申请号：US12691561
申请日：2010-01-21
申请人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/095 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0045 , G03F7/0048
摘要： A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.
摘要翻译：一种正型抗蚀剂组合物，包括：在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）和在曝光时产生酸的酸产生剂组分（B）; 溶解在有机溶剂（S）中，其中，所述基材成分（A）含有具有4种特定结构单元的树脂成分（A1），所述有机溶剂（S）含有60〜99重量％的醇的有机溶剂（S1）和1至40重量％的至少一种选自丙二醇单甲醚乙酸酯，丙二醇单甲醚和环己酮的有机溶剂（S2）。

7. 发明申请

US20120183899A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20120183899A1
公开(公告)日：2012-07-19
申请号：US13346166
申请日：2012-01-09
申请人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0048 , G03F7/0397 , G03F7/2041
摘要： A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.
摘要翻译：一种抗蚀剂组合物，其含有在酸的作用下在显影液中显示出改变的溶解性的基础成分（A）和曝露后产生酸的酸产生剂成分（B），溶解在含有醇的有机溶剂（S）的基础成分（A）含有在酸的作用下显示出极性增加的共聚物（A1），共聚物（A1）是共聚物，其中结构单元（a2）衍生自丙烯酸酯，其中与α-位上的碳原子键合的氢原子可以被取代基取代，并且包括含内酯的环状基团，均匀地分散在共聚物分子内。

8. 发明授权

US08968990B2 Method of forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US08968990B2
公开(公告)日：2015-03-03
申请号：US13614017
申请日：2012-09-13
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Hideto Nito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Hideto Nito
IPC分类号： G03F7/26 , G03F7/20 , G03F7/004 , G03F7/38 , G03F7/039
CPC分类号： G03F7/20 , G03F7/004 , G03F7/0045 , G03F7/0397 , G03F7/38
摘要： A method of forming a resist pattern, including: step (1) in which a resist composition including a base component, a photobase generator component and an acid supply component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to exposure without being subjected to prebaking; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component upon the exposure and an acid derived from the acid supply component are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid derived from the acid supply component; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern.
摘要翻译：一种形成抗蚀剂图案的方法，包括：步骤（1），其中将包含基底组分，光碱产生剂组分和酸供应组分的抗蚀剂组合物施加到基底上以形成抗蚀剂膜; 步骤（2），其中抗蚀剂膜经受曝光而不经受预烘烤; 步骤（3），其中在步骤（2）之后进行烘烤，使得在抗蚀剂膜的暴露部分，曝光时由光产生剂组分产生的碱和源自酸供应组分的酸被中和，并且在抗蚀剂膜的未曝光部分，通过来自酸供应成分的酸的作用，碱成分在碱性显影液中的溶解度增加; 和步骤（4），其中抗蚀剂膜经受碱显影，从而形成负色调抗蚀剂图案。

9. 发明申请

US20130017500A1 METHOD OF FORMING RESIST PATTERN 有权
标题翻译：形成电阻图案的方法
公开(公告)号：US20130017500A1
公开(公告)日：2013-01-17
申请号：US13467549
申请日：2012-05-09
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Hiroaki Shimizu , Masaru Takeshita , Hideto Nito , Hirokuni Saito
IPC分类号： G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/203 , G03F7/2041 , G03F7/26 , G03F7/38
摘要： A method of forming a resist pattern, including forming a resist film on a substrate using a resist composition comprising a base component that exhibits increased solubility in an alkali developing solution and a photo-base generator component; exposing the resist film; baking the exposed resist film, such that, at an exposed portion thereof, the base generated from the photo-base generator component upon the exposure and an acid provided to the resist film are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the acid provided to the resist film; and subjecting the resist film to alkali development, thereby forming a negative-tone resist pattern in which the unexposed portion of the resist film has been dissolved and removed.
摘要翻译：一种形成抗蚀剂图案的方法，包括使用包含在碱性显影液中显示出增加的溶解度的基础成分的抗蚀剂组合物和光产生剂组分在基材上形成抗蚀剂膜; 曝光抗蚀膜; 烘烤曝光的抗蚀剂膜，使得在曝光部分，曝光时由光产生器部件产生的基底和提供给抗蚀剂膜的酸被中和，并且在抗蚀剂膜的未曝光部分，碱性成分在碱性显影液中的溶解度通过提供于抗蚀剂膜的酸而增加; 并对抗蚀剂膜进行碱显影，从而形成抗蚀剂膜的未曝光部分已被溶解并除去的负色调抗蚀剂图案。

10. 发明授权

US08877432B2 Method of forming resist pattern and resist composition 有权
标题翻译：形成抗蚀剂图案和抗蚀剂组合物的方法
公开(公告)号：US08877432B2
公开(公告)日：2014-11-04
申请号：US13073651
申请日：2011-03-28
申请人： Jiro Yokoya , Tsuyoshi Nakamura , Masaru Takeshita , Yasuhiro Yoshii , Hirokuni Saito
发明人： Jiro Yokoya , Tsuyoshi Nakamura , Masaru Takeshita , Yasuhiro Yoshii , Hirokuni Saito
IPC分类号： G03F7/20 , G03F7/039 , G03F7/038 , G03F7/00 , G03F7/40 , G03F7/004
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0382 , G03F7/0397 , G03F7/2041 , G03F7/40
摘要： There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.
摘要翻译：提供了一种形成抗蚀剂图案的方法，其中通过使用化学放大型抗蚀剂组合物在基板的顶部上形成抗蚀剂图案并进行图案化两次或更多次，该方法能够减少由...引起的损伤程度施加在由第一图案化形成的第一抗蚀剂图案上的第二图案化; 以及在形成抗蚀剂图案的方法中可用于形成第一抗蚀剂图案的抗蚀剂组合物。该方法包括在第一图案化期间使用含有热碱发生器作为化学放大型抗蚀剂组合物的抗蚀剂组合物形成第一抗蚀剂图案，然后在烘烤条件下进行硬烘烤以烘烤第一抗蚀剂图案，使得产生碱来自热源发生器，在第二图案化之前。

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