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1. 发明授权

US07494761B2 Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition 有权
标题翻译：环糊精衍生物，包括环糊精衍生物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US07494761B2
公开(公告)日：2009-02-24
申请号：US11853047
申请日：2007-09-11
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Hong Lee , Do-Young Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Hong Lee , Do-Young Kim
IPC分类号： G03F7/004 , G03F7/30 , C08B31/00
CPC分类号： C07H3/00 , G03F7/0392 , G03F7/0395 , Y10S430/112
摘要： A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a β-cyclodextrin moiety and at least one alkyl carbonate group.
摘要翻译：通过用光致抗蚀剂组合物涂覆目标层，形成光致抗蚀剂膜，所述光致抗蚀剂组合物包含约7-约14重量％的环糊精衍生物，约0.1-约0.5重量％的光酸产生剂，剩余的有机溶剂。环糊精衍生物包括β-环糊精部分和至少一个碳酸烷基酯基团。

2. 发明授权

US07527913B2 Photoacid generators, photoresist composition including the same and method of forming pattern using the same 失效
标题翻译：光生酸产生剂，包含其的光致抗蚀剂组合物和使用其形成图案的方法
公开(公告)号：US07527913B2
公开(公告)日：2009-05-05
申请号：US12011226
申请日：2008-01-24
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
IPC分类号： G03F7/004 , G03F7/30 , C07C69/00
CPC分类号： C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.
摘要翻译：光致抗蚀剂组合物包括约4重量％至约10重量％的光致抗蚀剂树脂，约0.1重量％至约0.5重量％的具有锍盐阳离子基团的光酸产生剂和含有羧基的锍盐阴离子基团亲水部位和剩余的溶剂。光致抗蚀剂组合物可以形成具有均匀轮廓的光致抗蚀剂图案。

3. 发明申请

US20080182203A1 Photoacid generators, photoresist composition including the same and method of forming pattern using the same 失效
标题翻译：光生酸产生剂，包含其的光致抗蚀剂组合物和使用其形成图案的方法
公开(公告)号：US20080182203A1
公开(公告)日：2008-07-31
申请号：US12011226
申请日：2008-01-24
申请人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
发明人： Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Do-Young Kim , Jae-Hee Choi , Se-Kyung Baek
IPC分类号： G03F7/004 , C07D333/16 , C07D311/06 , G03F7/26 , C07C301/00
CPC分类号： C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.
摘要翻译：光致抗蚀剂组合物包括约4重量％至约10重量％的光致抗蚀剂树脂，约0.1重量％至约0.5重量％的具有锍盐阳离子基团的光酸产生剂和含有羧基的锍盐阴离子基团亲水部位和剩余的溶剂。光致抗蚀剂组合物可以形成具有均匀轮廓的光刻胶图案。

4. 发明授权

US07491484B2 Photoresist compositions and methods of forming a pattern using the same 失效
标题翻译：光刻胶组合物和使用其形成图案的方法
公开(公告)号：US07491484B2
公开(公告)日：2009-02-17
申请号：US11869933
申请日：2007-10-10
申请人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
摘要翻译：在光致抗蚀剂组合物和使用其形成图案的方法中，光致抗蚀剂组合物包含约0.1至约0.5重量％的包含带正电荷的锍离子的光酸产生剂和具有亲水性羧基的带负电荷的磺酸根离子，约为 4至约10重量％的树脂和溶剂。

5. 发明申请

US20080160448A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING A PATTERN USING THE SAME 失效
标题翻译：光刻胶组合物和形成使用该图案的图案的方法
公开(公告)号：US20080160448A1
公开(公告)日：2008-07-03
申请号：US11869933
申请日：2007-10-10
申请人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
发明人： Hyo-Jin Yun , Young-Gil Kwon , Do-Young Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim
IPC分类号： G03F7/004 , G03F7/26
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0392 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
摘要翻译：在光致抗蚀剂组合物和使用其形成图案的方法中，光致抗蚀剂组合物包含约0.1至约0.5重量％的包含带正电荷的锍离子的光酸产生剂和具有亲水性羧基的带负电荷的磺酸根离子，约为 4至约10重量％的树脂和溶剂。

6. 发明申请

US20070166644A1 Photoresist composition and method of forming a photoresist pattern using the same 审中-公开
标题翻译：光致抗蚀剂组合物及其形成方法
公开(公告)号：US20070166644A1
公开(公告)日：2007-07-19
申请号：US11655158
申请日：2007-01-19
申请人： Boo-Deuk Kim , Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Jin-A Ryu
发明人： Boo-Deuk Kim , Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Jin-A Ryu
IPC分类号： G03C1/00
CPC分类号： G03F7/038
摘要： In one aspect, a photoresist composition includes a cross-linking agent, a photosensitive material, an organic solvent, and a compound having a chemical structure represented by formulae (1) or (2) herein. The cross-linking agent includes at least one epoxy group and/or at least two hydroxyl groups.
摘要翻译：在一个方面，光致抗蚀剂组合物包括交联剂，感光材料，有机溶剂和具有由本文式（1）或（2）表示的化学结构的化合物。交联剂包括至少一个环氧基和/或至少两个羟基。

7. 发明申请

US20070148590A1 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition 失效
标题翻译：硅氧烷化合物，包含硅氧烷化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US20070148590A1
公开(公告)日：2007-06-28
申请号：US11640172
申请日：2006-12-18
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
IPC分类号： G03C1/00
CPC分类号： G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
摘要： Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.
摘要翻译：公开了硅氧烷化合物，使用其的光致抗蚀剂组合物和形成图案的方法，其中硅氧烷化合物具有以下通式：其中R1是叔丁基或1-（叔丁氧基）乙基，并且R 2和R 3各自独立地为具有1至4个碳原子的低级烷基。

8. 发明授权

US07485407B2 Siloxane compound, photoresist composition including the siloxane compound and method of forming a pattern using the photoresist composition 失效
标题翻译：硅氧烷化合物，包含硅氧烷化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US07485407B2
公开(公告)日：2009-02-03
申请号：US11640172
申请日：2006-12-18
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Do-Young Kim
IPC分类号： G03C1/73 , G03F7/20 , G03F7/30 , G03F7/36 , C07F7/21
CPC分类号： G03F7/0757 , C07F7/21 , G03F7/0045 , G03F7/0397 , G03F7/0755 , Y10S430/115 , Y10S430/122 , Y10S430/126 , Y10S430/146 , Y10S430/167
摘要： Disclosed are a siloxane compound, a photoresist composition using the same, and a method of forming a pattern, wherein the siloxane compound is having a general formula: wherein R1 is a tertiary butyl group or a 1-(tert-butoxy)ethyl group, and R2 and R3 is each independently a lower alkyl group having 1 to 4 carbon atoms.
摘要翻译：公开了硅氧烷化合物，使用其的光致抗蚀剂组合物和形成图案的方法，其中硅氧烷化合物具有以下通式：其中R1是叔丁基或1-（叔丁氧基）乙基，并且R 2和R 3各自独立地为具有1至4个碳原子的低级烷基。

9. 发明授权

US08871423B2 Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same 有权
标题翻译：用于制造探针阵列的光致抗蚀剂组合物，使用光致抗蚀剂组合物制造探针阵列的方法，用于感光型显影底部抗反射涂层的组合物，使用其的图案的制造方法和使用其的半导体器件的制造方法
公开(公告)号：US08871423B2
公开(公告)日：2014-10-28
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
IPC分类号： G03F7/004 , G03F7/38 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/039 , G03F7/20
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译：提供了用于制造探针阵列的光致抗蚀剂组合物。光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。

10. 发明授权

US08247162B2 Methods of forming a pattern using photoresist compositions 有权
标题翻译：使用光致抗蚀剂组合物形成图案的方法
公开(公告)号：US08247162B2
公开(公告)日：2012-08-21
申请号：US12662455
申请日：2010-04-19
申请人： Ji-Man Park , Young-Ho Kim , Hyo-Jin Yun , Sun-Yul Ahn , Song-Se Yi , Kyung-Woo Park
发明人： Ji-Man Park , Young-Ho Kim , Hyo-Jin Yun , Sun-Yul Ahn , Song-Se Yi , Kyung-Woo Park
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0392
摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.
摘要翻译：一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。

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