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1. 发明申请

US20110189608A1 PHOTORESIST COMPOSITION FOR FABRICATING PROBE ARRAY, METHOD OF FABRICATING PROBE ARRAY USING THE PHOTORESIST COMPOSITION, COMPOSITION FOR PHOTOSENSITIVE TYPE DEVELOPED BOTTOM ANTI-REFLECTIVE COATING, FABRICATING METHOD OF PATTERNS USING THE SAME AND FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：用于制造探针阵列的光电组合物，使用光电组合物制造探针阵列的方法，用于感光型底层反射涂层的组合物，使用其的图案的制作方法和使用其的半导体器件的制造方法
公开(公告)号：US20110189608A1
公开(公告)日：2011-08-04
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译：提供了用于制造探针阵列的光致抗蚀剂组合物。光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。

2. 发明授权

US07964332B2 Methods of forming a pattern of a semiconductor device 失效
标题翻译：形成半导体器件的图案的方法
公开(公告)号：US07964332B2
公开(公告)日：2011-06-21
申请号：US12339863
申请日：2008-12-19
申请人： Hyo-Jin Yun , Young-Ho Kim , Boo-Deuk Kim , Ji-Man Park , Jin-A Ryu , Jae-Hee Choi
发明人： Hyo-Jin Yun , Young-Ho Kim , Boo-Deuk Kim , Ji-Man Park , Jin-A Ryu , Jae-Hee Choi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11 , G03F7/26
CPC分类号： G03F7/091 , G03F7/038 , Y10S430/106 , Y10S430/114 , Y10S430/128
摘要： In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.
摘要翻译：在用于抗反射涂层的聚合物中，用于抗反射涂层的组合物和使用其形成半导体器件的图案的方法，用于抗反射涂层的组合物包括聚合物，其包括具有碱性具有光吸收基团的第二重复单元和具有可交联基团的第三重复单元; 光致酸发生器; 交联剂; 和溶剂。用于抗反射涂层的聚合物可以具有与聚合物的骨架化学结合的碱性侧基，可以适当地调节抗反射涂层中的酸的扩散以改善图案的轮廓。

3. 发明申请

US20090162796A1 METHODS OF FORMING A PATTERN OF A SEMICONDUCTOR DEVICE 失效
标题翻译：形成半导体器件图案的方法
公开(公告)号：US20090162796A1
公开(公告)日：2009-06-25
申请号：US12339863
申请日：2008-12-19
申请人： Hyo-Jin YUN , Young-Ho Kim , Boo-Deuk Kim , Ji-Man Park , Jin-A Ryu , Jae-Hee Choi
发明人： Hyo-Jin YUN , Young-Ho Kim , Boo-Deuk Kim , Ji-Man Park , Jin-A Ryu , Jae-Hee Choi
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/038 , Y10S430/106 , Y10S430/114 , Y10S430/128
摘要： In polymers for an anti-reflective coating, compositions for an anti-reflective coating and methods of forming a pattern of a semiconductor device using the same, the compositions for an anti-reflective coating include a polymer that includes a first repeating unit having a basic side group, a second repeating unit having a light-absorbing group, and a third repeating unit having a cross-linkable group; a photoacid generator; a cross-linking agent; and a solvent. The polymer for the anti-reflective coating, which may have a basic side group chemically bound to a backbone of the polymer, may properly adjust diffusion of an acid in an anti-reflective coating layer to improve the profile of a pattern.
摘要翻译：在用于抗反射涂层的聚合物中，用于抗反射涂层的组合物和使用其形成半导体器件的图案的方法，用于抗反射涂层的组合物包括聚合物，其包括具有碱性具有光吸收基团的第二重复单元和具有可交联基团的第三重复单元; 光致酸发生器; 交联剂; 和溶剂。用于抗反射涂层的聚合物可以具有与聚合物的骨架化学结合的碱性侧基，可以适当地调节抗反射涂层中的酸的扩散以改善图案的轮廓。

4. 发明授权

US06838223B2 Compositions for anti-reflective light absorbing layer and method for forming patterns in semiconductor device using the same 失效
标题翻译：用于抗反射光吸收层的组合物和使用其形成半导体器件中的图案的方法
公开(公告)号：US06838223B2
公开(公告)日：2005-01-04
申请号：US10364406
申请日：2003-02-12
申请人： Sang-woong Yoon , Hoe-sik Chung , Jin-a Ryu , Young-ho Kim
发明人： Sang-woong Yoon , Hoe-sik Chung , Jin-a Ryu , Young-ho Kim
IPC分类号： G03F7/11 , G03F7/004 , G03F7/023 , G03F7/038 , G03F7/09 , G03F7/095 , H01L21/027 , G03F7/30
CPC分类号： G03F7/091 , G03F7/0382 , G03F7/095
摘要： A composition for an anti-reflective layer capable of simultaneously being developed together with a photoresist layer after exposure of the photoresist layer in a photolithography process and a method for forming patterns in a semiconductor device using the composition, wherein the anti-reflective light absorbing layer composition includes a polymer having a (meth)acrylate repeating unit, a light-absorbing group of diazoquinones chemically bound to the (meth)acrylate repeating unit, a photoacid generator, a cross-linker which thermally cross-links the polymer and is decomposed from the polymer by an acid, and a catalyst for the cross-linking reaction of the polymer. The method for forming patterns in a semiconductor device involves forming an anti-reflective layer on a semiconductor substrate using the composition and simultaneously exposing the anti-reflective layer and a photoresist layer, thereby chemically transforming the anti-reflective layer so it is able to be developed. The anti-reflective layer and the photoresist layer are simultaneously developed.
摘要翻译：一种用于在光刻工艺中曝光光致抗蚀剂层之后能够与光致抗蚀剂层一起显影的抗反射层的组合物，以及使用该组合物在半导体器件中形成图案的方法，其中抗反射光吸收层组合物包括具有（甲基）丙烯酸酯重复单元的聚合物，与（甲基）丙烯酸酯重复单元化学键合的重氮醌的光吸收基团，光酸产生剂，热交联聚合物并从聚合物中分解的交联剂所述聚合物由酸和所述聚合物的交联反应的催化剂组成。在半导体器件中形成图案的方法包括使用该组合物在半导体衬底上形成抗反射层，同时使抗反射层和光致抗蚀剂层暴露，从而使抗反射层化学转化，使其能够发达。同时显影抗反射层和光致抗蚀剂层。

5. 发明授权

US08871423B2 Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same 有权
标题翻译：用于制造探针阵列的光致抗蚀剂组合物，使用光致抗蚀剂组合物制造探针阵列的方法，用于感光型显影底部抗反射涂层的组合物，使用其的图案的制造方法和使用其的半导体器件的制造方法
公开(公告)号：US08871423B2
公开(公告)日：2014-10-28
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
IPC分类号： G03F7/004 , G03F7/38 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/039 , G03F7/20
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译：提供了用于制造探针阵列的光致抗蚀剂组合物。光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。

6. 发明申请

US20070166644A1 Photoresist composition and method of forming a photoresist pattern using the same 审中-公开
标题翻译：光致抗蚀剂组合物及其形成方法
公开(公告)号：US20070166644A1
公开(公告)日：2007-07-19
申请号：US11655158
申请日：2007-01-19
申请人： Boo-Deuk Kim , Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Jin-A Ryu
发明人： Boo-Deuk Kim , Hyo-Jin Yun , Young-Gil Kwon , Young-Ho Kim , Jin-A Ryu
IPC分类号： G03C1/00
CPC分类号： G03F7/038
摘要： In one aspect, a photoresist composition includes a cross-linking agent, a photosensitive material, an organic solvent, and a compound having a chemical structure represented by formulae (1) or (2) herein. The cross-linking agent includes at least one epoxy group and/or at least two hydroxyl groups.
摘要翻译：在一个方面，光致抗蚀剂组合物包括交联剂，感光材料，有机溶剂和具有由本文式（1）或（2）表示的化学结构的化合物。交联剂包括至少一个环氧基和/或至少两个羟基。

7. 发明申请

US20060160021A1 Photoresist composition and method of forming a photoresist pattern using the same 有权
标题翻译：光致抗蚀剂组合物及其形成方法
公开(公告)号：US20060160021A1
公开(公告)日：2006-07-20
申请号：US11334200
申请日：2006-01-17
申请人： Boo-Deuk Kim , Jin-A Ryu , Jae-Ho Kim , Young-Ho Kim , Kyoung-Mi Kim
发明人： Boo-Deuk Kim , Jin-A Ryu , Jae-Ho Kim , Young-Ho Kim , Kyoung-Mi Kim
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/114 , Y10S430/118
摘要： In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.
摘要翻译：在用于半导体制造方法的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法中，光致抗蚀剂组合物包括用于分散酸（H +）的有机分散剂。光致抗蚀剂膜可以在光敏聚合物中具有足够的空间，使得酸可以在曝光过程中充分分散。因此，可以在散焦区域中容易地形成光致抗蚀剂图案。可以减少半导体器件中的缺陷，并且可以提高半导体制造工艺的生产率。

8. 发明授权

US07026497B2 Adhesive compound and method for forming photoresist pattern using the same 失效
标题翻译：粘合剂和使用其形成光刻胶图案的方法
公开(公告)号：US07026497B2
公开(公告)日：2006-04-11
申请号：US11033154
申请日：2005-01-12
申请人： Jin-A Ryu , Boo-Deuk Kim , Kyoung-Mi Kim , Young-Ho Kim
发明人： Jin-A Ryu , Boo-Deuk Kim , Kyoung-Mi Kim , Young-Ho Kim
IPC分类号： C07F7/02
CPC分类号： G03F7/0752 , G03F7/0751
摘要： An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula, wherein R represents a photoacid generator is disclosed.
摘要翻译：用于形成由下列化学式表示的光致抗蚀剂膜的粘合剂化合物，其中R表示光致酸发生剂。

9. 发明申请

US20050158651A1 Adhesive compound and method for forming photoresist pattern using the same 失效
标题翻译：粘合剂和使用其形成光刻胶图案的方法
公开(公告)号：US20050158651A1
公开(公告)日：2005-07-21
申请号：US11033154
申请日：2005-01-12
申请人： Jin-A Ryu , Boo-Deuk Kim , Kyoung-Mi Kim , Young-Ho Kim
发明人： Jin-A Ryu , Boo-Deuk Kim , Kyoung-Mi Kim , Young-Ho Kim
IPC分类号： G03C1/492 , G03F7/075
CPC分类号： G03F7/0752 , G03F7/0751
摘要： An adhesive compound for use during the formation of a photoresist film represented by the following chemical formula, wherein R represents a photoacid generator is disclosed.
摘要翻译：用于形成由下列化学式表示的光致抗蚀剂膜的粘合剂化合物，其中R表示光致酸发生剂。

10. 发明授权

US07442489B2 Photoresist composition and method of forming a photoresist pattern using the same 有权
标题翻译：光致抗蚀剂组合物及其形成方法
公开(公告)号：US07442489B2
公开(公告)日：2008-10-28
申请号：US11334200
申请日：2006-01-17
申请人： Boo-Deuk Kim , Jin-A Ryu , Jae-Ho Kim , Young-Ho Kim , Kyoung-Mi Kim
发明人： Boo-Deuk Kim , Jin-A Ryu , Jae-Ho Kim , Young-Ho Kim , Kyoung-Mi Kim
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/114 , Y10S430/118
摘要： In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.
摘要翻译：在用于半导体制造方法的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法中，光致抗蚀剂组合物包括用于分散酸（H +）的有机分散剂。光致抗蚀剂膜可以在光敏聚合物中具有足够的空间，使得酸可以在曝光过程中充分分散。因此，可以在散焦区域中容易地形成光致抗蚀剂图案。可以减少半导体器件中的缺陷，并且可以提高半导体制造工艺的生产率。

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