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1. 发明申请

WO2006004954A1 METHOD FOR CHEMICALLY BONDING LANGMUIR-BLODGETT FILMS TO SUBSTRATES 审中-公开
标题翻译：用于将LANGMIRIR-BLDGETT膜结合到基板的方法
公开(公告)号：WO2006004954A1
公开(公告)日：2006-01-12
申请号：PCT/US2005/023324
申请日：2005-06-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY L.P. , ZANG, Sean X , ZHOU, Zhang-Lin , CHEN, Yong
发明人： ZANG, Sean X , ZHOU, Zhang-Lin , CHEN, Yong
IPC分类号： H01L51/20
CPC分类号： H01L51/0075 , B05D1/202 , B82Y10/00 , G11C2213/77 , H01L27/285 , H01L51/0013 , H01L51/0024 , H01L51/0595 , Y10S977/708
摘要： A method of attaching a molecular layer to a substrate (38, 40) includes attaching a temporary protecting group(s) (32, 36) to a molecule (18) having a molecular switching moiety (26) with first and second connecting groups (30, 28) attached to opposed ends thereof. The temporary protecting group(s) (32, 36) is attached to the first and/or second connecting group (30, 28) so as to cause the opposed ends of the switching moiety (26) to exhibit a difference in hydrophilicity such that one of the ends remains at at least one of a water/solvent interface (34) and a water/air interface (34), and the other end remains in air during a Langmuir-Blodgett (LB) process. An LB film is formed on the interface (34). The temporary protecting group(s) (32, 36) is removed. The substrate (38, 40) is passed through the LB film to form the molecular layer chemically bonded on the substrate (38, 40). The difference in hydrophilicity between the opposed ends causes formation of a substantially well-oriented, uniform LB film at the interface (34).
摘要翻译：将分子层附接到基底（38,40）的方法包括将临时保护基团（32,36）附着到具有分子切换部分（26）的分子（18）上，其具有第一和第二连接基团（ 30,28）。临时保护基团（32,36）连接到第一和/或第二连接基团（30,28），以使开关部分（26）的相对端部呈现亲水性差异，使得一个端部保留在水/溶剂界面（34）和水/空气界面（34）中的至少一个上，另一端在Langmuir-Blodgett（LB）过程中保留在空气中。在界面（34）上形成LB膜。移除临时保护组（32,36）。使衬底（38,40）通过LB膜以形成化学键合在衬底（38,40）上的分子层。相对端之间的亲水性差异导致在界面（34）处形成基本上良好取向的均匀的LB膜。

2. 发明申请

WO2006005016A1 A MOLECULAR LAYER AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：分子层及其形成方法
公开(公告)号：WO2006005016A1
公开(公告)日：2006-01-12
申请号：PCT/US2005/023585
申请日：2005-06-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY L.P. , ZANG, Sean X , CHEN, Yong
发明人： ZANG, Sean X , CHEN, Yong
IPC分类号： H01L51/20
CPC分类号： H01L51/0595 , B05D1/202 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/285 , H01L51/0075 , Y10T428/26 , Y10T428/31504 , Y10T428/31938
摘要： A molecular layer (21) includes a Langmuir-Blodgett (LB) film (30) of a molecule (18) connected to a plurality of active device molecules (18), the molecule (18) having a moiety (26) with first and second connecting groups (32, 34) at opposed ends of the moiety (26). Each of the plurality of active device molecules (18) includes a switching moiety (26), a self-assembling connecting group (28) at one end of the switching moiety (26), and a linking group (27) at an opposed end of the moiety (26). One or more defect site(s) (31) exist between the plurality of active device molecules (18). A respective number of the first connecting groups (32) of the LB film (30) are connected to the plurality of active device molecules (18) via at least some of the linking groups (27) such that the LB film (30) covers the plurality of active device molecules (18) and the one or more defect site(s) (31).
摘要翻译：分子层（21）包括连接到多个活性器件分子（18）的分子（18）的Langmuir-Blodgett（LB）膜（30），该分子（18）具有部分（26），第一和第二连接基团（32,34）在部分（26）的相对端。多个有源器件分子（18）中的每一个包括切换部分（26），在开关部分（26）的一端处的自组装连接基团（28）和在相对端的连接基团（27）的部分（26）。在多个活性器件分子（18）之间存在一个或多个缺陷部位（31）。 LB膜（30）的相应数量的第一连接组（32）经由至少一些连接组（27）连接到多个有源器件分子（18），使得LB膜（30）覆盖多个活性器件分子（18）和一个或多个缺陷部位（31）。

3. 发明申请

WO2006083310A2 NANOWIRE DEVICE WITH (111) VERTICAL SIDEWALLS AND METHOD OF FABRICATION 审中-公开
标题翻译：具有（111）垂直侧壁的纳米线装置和制造方法
公开(公告)号：WO2006083310A2
公开(公告)日：2006-08-10
申请号：PCT/US2005/022699
申请日：2005-06-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ISLAM, Saiful, M. , CHEN, Yong , WANG, Shih-Yuan
发明人： ISLAM, Saiful, M. , CHEN, Yong , WANG, Shih-Yuan
IPC分类号： B81B7/00
CPC分类号： H01L27/1203 , B82Y10/00 , G11C2213/81 , H01L29/045 , H01L29/0665 , H01L29/0673 , H01L29/861
摘要： A nano-scale device 10, 20, 30, 60 and method 40, 50, 70 of fabrication provide a nanowire 14, 24, 34, 64 having (111) vertical sidewalls 14a, 22e, 34a, 64a. The nano-scale device includes a semiconductor-on-insulator substrate 12, 22, 32, 62 polished in a [110] direction, the nanowire, and an electrical contact 26, 35 at opposite ends of the nanowire 24, 34. The method 40, 50, 70 includes wet etching 42, 52, 72 a semiconductor layer 12a, 22a, 32a. 62a of the semiconductor-on-insulator substrate to form 44, 54 the nanowire 24, 34 extending between a pair of islands 22f, 32f in the semiconductor layer 22a, 32a. The method 50 further includes depositing 56 an electrically conductive material on the pair of islands to form the electrical contacts 26, 36. A nano-pn diode 60 includes the nanowire 64 as a first nano-electrode, a pn-junction 66 verically stacked on the nanowire 64, and a second nano-electrode 68 on a (110) horizontal planar end of the pn-junction. The nano-pn diode 60 may be fabricated in array of the diodes on the semiconductor-on-insulator substrate 62.
摘要翻译：纳米级器件10,20,30,60和制造方法40,50,70提供纳米线14,24,34,64，其具有（111）垂直侧壁14a，22e，34a ，64a。纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底12,22,32,62，纳米线以及在纳米线24,34的相对端处的电接触26,35。方法 40,50,70包括湿法刻蚀42,52,72半导体层12a，22a，32a。 62a以形成在半导体层22a，32a中的一对岛22f，32f之间延伸的纳米线24,34。方法50进一步包括在这对岛上沉积56导电材料以形成电接触26,36。纳米pn二极管60包括作为第一纳米电极的纳米线64，静电堆叠在其上的pn结66 纳米线64以及在pn结的（110）水平平面端上的第二纳米电极68。纳米pn二极管60可以在绝缘体上半导体衬底62上的二极管阵列中制造。

4. 发明申请

WO2005117023A2 A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 审中-公开
标题翻译：通过电场诱导的分子和电极之间的内部或内部电荷转移的电子切换结果的结果的组成
公开(公告)号：WO2005117023A2
公开(公告)日：2005-12-08
申请号：PCT/US2005/016999
申请日：2005-05-17
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , CHEN, Yong , ZHANG, Xiao-An , BRATKOVSKI, Alexandre, M. , WILLIAMS, Stanley, R.
发明人： CHEN, Yong , ZHANG, Xiao-An , BRATKOVSKI, Alexandre, M. , WILLIAMS, Stanley, R.
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
摘要翻译：提供了一种物质组合物，其通过在分子（12）和电极（14,16; 14'，16'）之间的分子内电荷转移或分子间电荷转移或电荷转移导致电性质的变化，其中电荷转移由电场引发。

5. 发明申请

WO2004040049A3 A METHOD OF FORMING CATALYST NANOPARTICLES FOR NANOWIRE GROWTH AND OTHER APPLICATIONS 审中-公开
公开(公告)号：WO2004040049A3
公开(公告)日：2004-05-13
申请号：PCT/US2003/032062
申请日：2003-10-10
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： KAMINS, Theodore, I. , KUEKES, Philip, J. , CHEN, Yong
IPC分类号： D01F9/08
摘要： Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.

6. 发明申请

WO2004003972A2 TRANSISTOR AND SENSORS MADE FROM MOLECULAR MATERIALS WITH ELECTRIC DIPOLES 审中-公开
标题翻译：用分子材料制成的晶体管和传感器
公开(公告)号：WO2004003972A2
公开(公告)日：2004-01-08
申请号：PCT/US2003/020068
申请日：2003-06-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： CHEN, Yong , BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley
IPC分类号： H01L
CPC分类号： H01L51/0512 , B82Y10/00 , B82Y15/00 , H01L51/005 , H01L51/0595
摘要： A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate: (b) a dielectric layer on a least a portion of the channel region; and (c) a molecular layer on the dielectric layer, the molecular layer comprising molecules having a switchable dipolar moiety. Addition of a gate over the molecular layer permits fabrication of a transistor, while omission of the gate, and utilization of suitable molecules that are sensitive to various changes in the environment permits fabrication of a variety of sensors. The molecular transistor and sensors are suitable for high density nanoscale circuits and are less expensive than prior art approaches.
摘要翻译：提供了一种偏振相关装置，其包括具有电偶极子的有机材料。所述偏振相关器件包括：（a）由在衬底上形成的具有长度L的沟道区域分开的源极区域和漏极区域;（b）在所述沟道区域的至少一部分上的介电层; 和（c）介电层上的分子层，该分子层包含具有可切换偶极子部分的分子。在分子层上添加栅极允许制造晶体管，同时省略栅极以及利用对环境中的各种变化敏感的合适分子允许制造各种传感器。分子晶体管和传感器适用于高密度纳米级电路，并且比现有技术方法便宜。

7. 发明申请

WO2004051714A2 A POLYMER SOLUTION FOR NANOPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE 审中-公开
标题翻译：用于纳米印刷光刻的聚合物溶液，以降低印刷温度和压力
公开(公告)号：WO2004051714A2
公开(公告)日：2004-06-17
申请号：PCT/US2003/037858
申请日：2003-11-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： JUNG, Gun-Young , SIVAPACKIA, Ganapathiappan , CHEN, Yong , WILLIAMS, R Stanley,
IPC分类号： H01L21/00
CPC分类号： B29C43/003 , B29C35/0888 , B29C59/022 , B29C2035/0827 , B29C2043/025 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/033
摘要： A method of forming features on substrates (10) by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on the substrate (10) to form a liquid film (12) thereon; and then either: (c) curing the liquid film (12) by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film (12'), the polymer film (12') having a glass transition temperature (T g ); and imprinting the polymer film (12') with a mold (16) having a desired pattern (16a) to form a corresponding negative pattern (12a) in the polymer film (12'), or (d) imprinting the liquid film (12') with the mold (16) and curing it to form the polymer film (12') having the negative pattern (12a). The temperature of imprinting is as little as 10°C above the T g , or even less if the film (12) is in the liquid state. The pressure (20) of the imprinting can be within the range of 100 to 500 psi.
摘要翻译：提供了通过压印在衬底（10）上形成特征的方法。该方法包括：（a）形成包含溶解在至少一种可聚合单体中的至少一种聚合物的聚合物溶液; 和（b）将聚合物溶液沉积在基板（10）上以在其上形成液膜（12）; 然后：（c）通过使所述单体聚合并任选交联所述聚合物以由此形成聚合物膜（12'）来固化所述液体膜（12），所述聚合物膜（12' ）具有玻璃化转变温度（T g /℃）; 和用具有所需图案（16a）的模具（16）压印聚合物薄膜（12'）以在聚合物薄膜（12'）中形成相应的负图案（12a），或者（d）压印液体薄膜（12） '）与模具（16）接触并固化以形成具有负图案（12a）的聚合物膜（12'）。压印的温度低于Tg <10℃，或者如果膜（12）处于液体状态，甚至更低。压印的压力（20）可以在100至500psi的范围内。

8. 发明授权

EP1747558B1 A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 有权
标题翻译：物重，要一个电子的传输通过帧内或分子间电荷转移分子与电极之间组成LEADS通过电场诱导
公开(公告)号：EP1747558B1
公开(公告)日：2011-12-28
申请号：EP05749124.3
申请日：2005-05-17
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： CHEN, Yong , ZHANG, Xiao-An , BRATKOVSKI, Alexandre, M. , WILLIAMS, Stanley, R.
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.

9. 发明公开

EP1756669A2 IMPRINTING LITHOGRAPHY USING THE LIQUID/SOLID TRANSITION OF METALS AND THEIR ALLOYS 有权
标题翻译：压力光刻使用液体/固体过渡金属及其合金
公开(公告)号：EP1756669A2
公开(公告)日：2007-02-28
申请号：EP05757746.2
申请日：2005-06-08
申请人： Hewlett-Packard Development Company, L.P.
发明人： CHEN, Yong
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method is provided for imprinting a pattern (18a) having nanoscale features from a mold (10) into the patternable layer (18) on a substrate (14). The method comprises: providing the mold (10); forming the patternable layer (18) on the substrate (14); and imprinting the mold (10) into the patternable layer (18), wherein the patternable layer (18) comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.

10. 发明授权

EP1556530B1 A METHOD OF FORMING NANOSTRUCTURED CATALYSTS FOR NANOWIRE GROWTH 有权
标题翻译：工艺的制备纳米结构化催化剂纳米线生长
公开(公告)号：EP1556530B1
公开(公告)日：2009-12-09
申请号：EP03773231.0
申请日：2003-10-10
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： KAMINS, Theodore, I. , KUEKES, Philip, J. , CHEN, Yong
IPC分类号： D01F9/08 , C30B23/00 , B81C1/00
CPC分类号： B82Y30/00 , B82Y10/00 , C30B11/00 , C30B11/12 , C30B29/605 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.

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