专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005117023A2 A COMPOSITION OF MATTER WHICH RESULTS IN ELECTRONIC SWITCHING THROUGH INTRA- OR INTER- MOLECULAR CHARGE TRANSFER BETWEEN MOLECULES AND ELECTRODES INDUCED BY AN ELECTRICAL FIELD 审中-公开
标题翻译：通过电场诱导的分子和电极之间的内部或内部电荷转移的电子切换结果的结果的组成
公开(公告)号：WO2005117023A2
公开(公告)日：2005-12-08
申请号：PCT/US2005/016999
申请日：2005-05-17
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , CHEN, Yong , ZHANG, Xiao-An , BRATKOVSKI, Alexandre, M. , WILLIAMS, Stanley, R.
发明人： CHEN, Yong , ZHANG, Xiao-An , BRATKOVSKI, Alexandre, M. , WILLIAMS, Stanley, R.
IPC分类号： G11C13/00
CPC分类号： G11C13/0019 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C2213/14 , G11C2213/56 , H01L51/0051 , H01L51/0059 , H01L51/0064 , H01L51/0067 , H01L51/0078 , H01L51/0591 , H01L51/0595
摘要： A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
摘要翻译：提供了一种物质组合物，其通过在分子（12）和电极（14,16; 14'，16'）之间的分子内电荷转移或分子间电荷转移或电荷转移导致电性质的变化，其中电荷转移由电场引发。

2. 发明申请

WO2010126485A1 A COVERT LABEL STRUCTURE 审中-公开
标题翻译：覆盖标签结构
公开(公告)号：WO2010126485A1
公开(公告)日：2010-11-04
申请号：PCT/US2009/041892
申请日：2009-04-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BRATKOVSKI, Alexandre, M. , THYLEN, Lars, Helge
发明人： BRATKOVSKI, Alexandre, M. , THYLEN, Lars, Helge
IPC分类号： G09F3/03 , G09F3/02 , B41M5/00
CPC分类号： B41M3/00 , B42D25/29 , B42D25/328 , B42D25/382 , B42D2035/14 , B42D2035/34 , G02B5/18 , G03H1/0011 , G03H1/02 , G03H1/0244 , G03H1/0256 , G03H1/08 , G03H2001/0016 , G03H2001/0284 , G03H2001/085 , G03H2001/2244 , G03H2222/16 , G03H2240/42 , G03H2250/10 , G03H2250/34 , G07D7/0032 , G09F3/0294 , G09F2003/0213 , Y10T29/49826
摘要： A covert label structure comprising a three dimensional diffracting optical element layer (100) having a depth profile for producing a predetermined pattern, wherein different portions of a top surface of the diffracting optical element layer (100) have at least two different depths relative to a bottom surface of the diffracting optical element layer (100), wherein the depth profile spans across two dimensions of the top surface of the diffracting optical element layer (100), and wherein the top surface reflects light according to the predefined pattern and an overcoat layer (108) over the top surface of the diffracting optical element layer (100) wherein the overcoat layer (108) is opaque to at least one wavelength of light.
摘要翻译：一种隐蔽标签结构，包括具有用于产生预定图案的深度分布的三维衍射光学元件层（100），其中衍射光学元件层（100）的顶表面的不同部分相对于衍射光学元件层（100）的底表面，其中深度分布跨越衍射光学元件层（100）的顶表面的两个维度，并且其中顶表面根据预定图案反射光，并且覆盖层（108）在所述衍射光学元件层（100）的顶表面上方，其中所述外涂层（108）对于至少一个波长的光不透明。

3. 发明申请

WO2010110790A1 GRID HEAT SINK 审中-公开
标题翻译：网路散热器
公开(公告)号：WO2010110790A1
公开(公告)日：2010-09-30
申请号：PCT/US2009/038255
申请日：2009-03-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BRATKOVSKI, Alexandre, M. , OSIPOV, Viatcheslav , BURWARD-HOY, Graeme, W. , KIYAMA, Lennie, K.
发明人： BRATKOVSKI, Alexandre, M. , OSIPOV, Viatcheslav , BURWARD-HOY, Graeme, W. , KIYAMA, Lennie, K.
IPC分类号： H05K7/20 , G06F1/20 , H01L23/34
CPC分类号： H01L23/467 , F28F3/02 , H01L23/367 , H01L2924/0002 , H01L2924/00
摘要： A grid heat sink (400) includes a base (420), a plurality of intersecting fins (410, 415), and a plurality of channels (405) formed by the intersecting fins. Each of the channels (405) accepts cooling air (1605) at an input side of the grid heat sink (400) and directs the cooling air (1605) to an exit at an output side of said grid heat sink (400).
摘要翻译：格栅散热器（400）包括基座（420），多个相交的翅片（410,415）以及由相交翅片形成的多个通道（405）。每个通道（405）接收在电网散热器（400）的输入侧的冷却空气（1605），并将冷却空气（1605）引导到所述电网散热器（400）的输出侧的出口。

4. 发明申请

WO2010120298A1 THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE 审中-公开
标题翻译：具有可变交叉部分连接结构的热电装置
公开(公告)号：WO2010120298A1
公开(公告)日：2010-10-21
申请号：PCT/US2009/040690
申请日：2009-04-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P , KUEKES, Philip, J. , BRATKOVSKI, Alexandre, M. , CHO, Hans, S. , QUITORIANO, Nathaniel, J. , KAMINS, Theodore, I. , WILLIAMS, R, Stanley
发明人： KUEKES, Philip, J. , BRATKOVSKI, Alexandre, M. , CHO, Hans, S. , QUITORIANO, Nathaniel, J. , KAMINS, Theodore, I. , WILLIAMS, R, Stanley
IPC分类号： H01L35/04 , H01L35/28
CPC分类号： H01L35/32
摘要： A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section.
摘要翻译：具有可变横截面连接结构的热电装置包括第一电极，第二电极和连接第一电极和第二电极的连接结构。连接结构具有第一部分和第二部分。第二部分的宽度大于第一部分的宽度，并且第一部分的宽度小于大致等于通过第一部分的声子平均自由程的宽度。

5. 发明申请

WO2006055798A1 COMPOSITE MATERIAL WITH CONTROLLABLE RESONANT CELLS 审中-公开
标题翻译：具有可控共振细胞的复合材料
公开(公告)号：WO2006055798A1
公开(公告)日：2006-05-26
申请号：PCT/US2005/041857
申请日：2005-11-18
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , KUEKES, Phillip, J. , WANG, Shih-Yuan , BEAUSOLEIL, Raymond, G. , BRATKOVSKI, Alexandre, M. , WU, Wei , ISLAM, M., Saiful
发明人： KUEKES, Phillip, J. , WANG, Shih-Yuan , BEAUSOLEIL, Raymond, G. , BRATKOVSKI, Alexandre, M. , WU, Wei , ISLAM, M., Saiful
IPC分类号： H01Q3/44 , H01Q15/00 , G02F1/01 , G02F1/29
CPC分类号： H01Q15/0086 , G02F1/0126 , G02F1/29 , H01Q3/44 , Y10T29/4902 , Y10T29/49798
摘要： An apparatus (100) for controlling propagation of incident electromagnetic radiation (110) is described, comprising a composite material (102) having electromagnetically reactive cells (106) of small dimension relative to a wavelength of the incident electromagnetic radiation (110). At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells (106) is temporally controllable to allow temporal control of an associated effective refactive index encountered by the incident electromagnetic radiation (110) while propagating through the composite material (106).
摘要翻译：描述了一种用于控制入射电磁辐射（110）的传播的装置（100），其包括相对于入射电磁辐射（110）的波长具有小尺寸的电磁反应池（106）的复合材料（102）。电磁反应池（106）中的至少一个电容和电感性质中的至少一个在时间上是可控的，以便允许对入射电磁辐射（110）遇到的相关联的有效反射指数进行时间控制，同时传播通过复合材料 106）。

6. 发明申请

WO2011093888A1 OPTICAL SENSOR NETWORKS AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：光传感器网络及其制作方法
公开(公告)号：WO2011093888A1
公开(公告)日：2011-08-04
申请号：PCT/US2010/022640
申请日：2010-01-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY L.P. , CHO, Hans, S. , BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley , HARTWELL, Peter, George
发明人： CHO, Hans, S. , BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley , HARTWELL, Peter, George
IPC分类号： H04B10/12 , H04B10/00
CPC分类号： G02B6/2938 , G01D5/268 , G01N21/7703 , G01N2021/7793 , G02B6/136 , G02B6/4403
摘要： Various embodiments of the present invention are directed to sensor networks and to methods for fabricating sensor networks. In one aspect, a sensor network includes a processing node (110, 310), and one or more sensor lines (102,202,302) optically coupled to fee processing node. Each sensor line comprises a waveguide {116,216,316), and one or more sensor nodes (112,210), Each sensor node is optically coupled to the waveguide and configured to measure one or more physical conditions and encode measurement results in one or more wavelengths of light carried by the waveguide to the processing node.
摘要翻译：本发明的各种实施例涉及传感器网络以及用于制造传感器网络的方法。在一个方面，传感器网络包括处理节点（110,310）以及与费用处理节点光耦合的一个或多个传感器线（102,202,302）。每个传感器线包括波导{116,216,316）和一个或多个传感器节点（112,210），每个传感器节点光学耦合到波导并且被配置成测量一个或多个物理条件，并且在携带的光的一个或多个波长中编码测量结果通过波导到处理节点。

7. 发明申请

WO2010147588A1 MEMCAPACITOR 审中-公开
标题翻译：忆容器
公开(公告)号：WO2010147588A1
公开(公告)日：2010-12-23
申请号：PCT/US2009/047791
申请日：2009-06-18
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley
发明人： BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley
IPC分类号： H01G5/01 , H01G5/00
CPC分类号： G11C11/24 , G11C13/0002 , H01G4/1272 , H01G4/255 , H01G4/33 , H01L27/101 , H01L28/40
摘要： A memcapacitor device (100) includes a first electrode (104) and a second electrode (106) and a memcapacitive matrix (102) interposed between the first electrode (104) and the second electrode (106). Mobile dopants (111) are contained within the memcapacitive matrix (102) and are repositioned within the memcapacitive matrix (102) by the application of a programming voltage (126) across the first electrode (104) and second electrode (106) to alter the capacitance of the memcapacitor (100). A method for utilizing a memcapacitive device (100) includes applying a programming voltage (126) across a memcapacitive matrix (102) such that mobile ions (111) contained within a memcapacitive matrix (102) are redistributed and alter a capacitance of the memcapacitive device (100), then removing the programming voltage (126) and applying a reading voltage to sense the capacitance of the memcapacitive device (100).
摘要翻译：电容器装置（100）包括插入在第一电极（104）和第二电极（106）之间的第一电极（104）和第二电极（106）和存储电容矩阵（102）。移动掺杂剂（111）被包含在存储体矩阵（102）内，并且通过跨越第一电极（104）和第二电极（106）施加编程电压（126）而重新定位在存储电容矩阵（102）内，以改变电容器（100）的电容。一种利用存储电容器件（100）的方法包括跨越存储电容矩阵（102）应用编程电压（126），使得包含在存储电容矩阵（102）内的移动离子（111）被重新分配并改变存储器件的电容（100），然后去除所述编程电压（126）并施加读取电压以感测所述存储器件（100）的电容。

8. 发明申请

WO2010110781A1 INDIRECT-BANDGAP-SEMICONDUCTOR, LIGHT-EMITTING DIODE 审中-公开
标题翻译：间接双峰半导体，发光二极管
公开(公告)号：WO2010110781A1
公开(公告)日：2010-09-30
申请号：PCT/US2009/037962
申请日：2009-03-23
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BRATKOVSKI, Alexandre, M. , OSIPOV, Viatcheslav
发明人： BRATKOVSKI, Alexandre, M. , OSIPOV, Viatcheslav
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L33/0012
摘要： An indirect-bandgap-semiconductor, light-emitting diode (401). The indirect-bandgap-semiconductor, light-emitting diode (401) includes a plurality of portions including a p-doped portion (412) of an indirect-bandgap semiconductor, an intrinsic portion (414) of the indirect-bandgap semiconductor, and a n-doped portion (416) of the indirect-bandgap semiconductor. The intrinsic portion (414) is disposed between the p-doped portion (412) and the n-doped portion (414) and forms a p-i junction (430) with the p-doped portion (412), and an i-n junction (434) with the n-doped portion (416). The p-i junction (430) and the i-n junction (434) are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion (414) when the indirect-bandgap-semiconductor, light-emitting diode (401) is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.
摘要翻译：间接带隙半导体发光二极管（401）。间接带隙半导体发光二极管（401）包括多个部分，其包括间接带隙半导体的p掺杂部分（412），间接带隙半导体的本征部分（414）和间接带隙半导体的n掺杂部分（416）。本征部分（414）设置在p掺杂部分（412）和n掺杂部分（414）之间并与p掺杂部分（412）形成π结（430），并且在结（434））与n掺杂部分（416）。当间接带隙半导体发光二极管（401）为（...）时，pI结（430）和In结（434）被构造成便于在本征部分（414）中形成至少一个热电子 - 空穴等离子体反向偏置，并促进热电子与孔复合产生的发光。

9. 发明申请

WO2011016794A2 MEMRISTORS WITH ASYMMETRIC ELECTRODES 审中-公开
标题翻译：不对称电极的电容
公开(公告)号：WO2011016794A2
公开(公告)日：2011-02-10
申请号：PCT/US2009/051936
申请日：2009-07-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BRATKOVSKI, Alexandre, M. , STUKE, Michael , YANG, Jianhua , WANG, Shih-yuan
发明人： BRATKOVSKI, Alexandre, M. , STUKE, Michael , YANG, Jianhua , WANG, Shih-yuan
CPC分类号： H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.
摘要翻译：本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。在一个实施例中，忆阻器装置（100）包括有源区（102），设置在有源区的第一表面上的第一电极（104）和设置在有源区的第二表面上的第二电极，与第一表面相对的第二表面。第一电极被构造成在第一方向上具有比有效区域更大的宽度，并且第二电极被配置为在第二方向上具有比有效区域更大的宽度。向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域（108）的电场。

10. 发明申请

WO2010126493A1 HOLOGRAPHIC MIRROR FOR OPTICAL INTERCONNECT SIGNAL ROUTING 审中-公开
标题翻译：光学互联信号路由的全息镜
公开(公告)号：WO2010126493A1
公开(公告)日：2010-11-04
申请号：PCT/US2009/041995
申请日：2009-04-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , BRATKOVSKI, Alexandre, M. , TAN, Michael, Renne Ty
发明人： BRATKOVSKI, Alexandre, M. , TAN, Michael, Renne Ty
IPC分类号： G02B5/32 , G02B6/124
CPC分类号： G02B1/005 , B82Y20/00 , G02B5/08 , G02B5/32 , G02B6/02085 , G02B6/021 , G02B6/0229 , G02B6/2931 , G02B6/29323 , G02B6/29334 , G03H1/0244
摘要： A holographic mirror 10 for re-directing an optical signal that includes a base 14 having an outer surface 16, and a plurality of discrete nano-structures 12 formed into the outer surface of the base. Each nano-structure has an out-of-plane dimension 20 that is within an order of magnitude of one or both in-plane dimensions 22. The plurality of nano-structures are configured in a repeating pattern with a predetermined spacing 18 between nano-structures for re-directing an optical signal.
摘要翻译：用于重新引导光信号的全息镜10，其包括具有外表面16的基底14和形成在基底的外表面中的多个分立的纳米结构12。每个纳米结构具有的面外尺寸20在一个或两个面内尺寸22的一个数量级内。多个纳米结构被配置成具有预定间隔18的重复图案，用于重新引导光信号的结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式