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1. 发明授权

US09064684B1 Flowable oxide deposition using rapid delivery of process gases 有权
标题翻译：使用快速输送工艺气体可流动的氧化物沉积
公开(公告)号：US09064684B1
公开(公告)日：2015-06-23
申请号：US13607511
申请日：2012-09-07
申请人： Collin K. L. Mui , Lakshminarayana Nittala , Nerissa Draeger
发明人： Collin K. L. Mui , Lakshminarayana Nittala , Nerissa Draeger
IPC分类号： B05C11/00 , H01L21/00 , H01L21/02 , B05C1/00
CPC分类号： H01L21/00 , B05C1/00 , B05C11/00 , C23C16/44 , C23C16/45523 , H01L21/02107 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02345
摘要： Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.
摘要翻译：提供了用电介质材料在部分制造的半导体衬底上填充间隙的方法和装置。在某些实施方案中，所述方法包括将第一工艺气体引入处理室并将第二工艺气体积聚在保持在基本上高于处理室压力水平的压力水平的蓄能器中。然后将第二工艺气体从蓄能器快速地引入到处理室中。在引入第二处理气体期间，可以在处理室中设置过量的第二处理气体。可流动的含硅膜在基材的表面上形成以至少部分地填充间隙。

2. 发明授权

US09257302B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US09257302B1
公开(公告)日：2016-02-09
申请号：US13461287
申请日：2012-05-01
申请人： Feng Wang , Brian Lu , Nerissa Draeger , Vishal Gauri , Raashina Humayun , Michal Danek , Bart van Schravendijk , Lakshminarayana Nittala
发明人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger , Vishal Gauri , Raashina Humayun , Michal Danek , Bart van Schravendijk , Lakshminarayana Nittala
IPC分类号： H01L21/316
CPC分类号： H01L21/76224 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02323
摘要： Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.
摘要翻译：提供了通过产生可流动的含氧化硅膜在基板上填充间隙的方法。所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。可流动膜至少部分地填充衬底上的间隙。在某些实施方案中，该方法包括在形成膜中使用催化剂。催化剂可以并入到一种反应物中和/或作为单独的反应物引入。

3. 发明授权

US08728958B2 Gap fill integration 有权
标题翻译：间隙填充整合
公开(公告)号：US08728958B2
公开(公告)日：2014-05-20
申请号：US12964110
申请日：2010-12-09
申请人： Kaihan Ashtiani , Michael Wood , John Drewery , Naohiro Shoda , Bart van Schravendijk , Lakshminarayana Nittala , Nerissa Draeger
发明人： Kaihan Ashtiani , Michael Wood , John Drewery , Naohiro Shoda , Bart van Schravendijk , Lakshminarayana Nittala , Nerissa Draeger
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02274 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02208 , H01L21/76224
摘要： Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.
摘要翻译：提供了包括沉积可流动氧化物膜和高密度等离子体化学气相沉积氧化物（HDP氧化物）膜的新型间隙填充方案。根据各种实施方案，可流动的氧化物膜可以用作牺牲层和/或用作自底向上间隙填充的材料。在某些实施例中，填充间隙的顶表面是HDP氧化物膜。所得到的填充间隙可以仅用HDP氧化物膜或HDP氧化物和可流动氧化物膜的组合填充。这些方法提供了改进的顶帽减少并且避免了限定间隙的结构的限制。

4. 发明申请

US20110151678A1 NOVEL GAP FILL INTEGRATION 有权
标题翻译：新的GAP填充整合
公开(公告)号：US20110151678A1
公开(公告)日：2011-06-23
申请号：US12964110
申请日：2010-12-09
申请人： Kaihan Ashtiani , Michael Wood , John Drewery , Naohiro Shoda , Bart van Schravendijk , Lakshminarayana Nittala , Nerissa Draeger
发明人： Kaihan Ashtiani , Michael Wood , John Drewery , Naohiro Shoda , Bart van Schravendijk , Lakshminarayana Nittala , Nerissa Draeger
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02208 , H01L21/76224
摘要： Novel gap fill schemes involving depositing both flowable oxide films and high density plasma chemical vapor deposition oxide (HDP oxide) films are provided. According to various embodiments, the flowable oxide films may be used as a sacrificial layer and/or as a material for bottom up gap fill. In certain embodiments, the top surface of the filled gap is an HDP oxide film. The resulting filled gap may be filled only with HDP oxide film or a combination of HDP oxide and flowable oxide films. The methods provide improved top hat reduction and avoid clipping of the structures defining the gaps.
摘要翻译：提供了包括沉积可流动氧化物膜和高密度等离子体化学气相沉积氧化物（HDP氧化物）膜的新型间隙填充方案。根据各种实施方案，可流动的氧化物膜可以用作牺牲层和/或用作自底向上间隙填充的材料。在某些实施例中，填充间隙的顶表面是HDP氧化物膜。所得到的填充间隙可以仅用HDP氧化物膜或HDP氧化物和可流动氧化物膜的组合填充。这些方法提供了改进的顶帽减少并且避免了限定间隙的结构的限制。

5. 发明授权

US08685867B1 Premetal dielectric integration process 有权
标题翻译：前金属电介质集成工艺
公开(公告)号：US08685867B1
公开(公告)日：2014-04-01
申请号：US13315123
申请日：2011-12-08
申请人： Michal Danek , Bart van Schravendijk , Nerissa Draeger , Lakshminarayana Nittala
发明人： Michal Danek , Bart van Schravendijk , Nerissa Draeger , Lakshminarayana Nittala
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/76801 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76837
摘要： Provided herein are novel pre-metal dielectric (PMD) integration schemes. According to various embodiments, the methods involve depositing flowable dielectric material to fill trenches or other gaps between gate structures in a front end of line (FEOL) fabrication process. The flowable dielectric material may be partially densified to form dual density filled gaps having a low density region capped by a high density region. In certain embodiments, the methods include further treating at least a portion of the gap fill material after subsequent process operations such as chemical mechanical planarization (CMP) or contact etching.
摘要翻译：本文提供了新颖的金属前介电（PMD）集成方案。根据各种实施例，所述方法包括沉积可流动介电材料以填充前端（FEOL）制造工艺中的栅极结构之间的沟槽或其它间隙。可流动电介质材料可以被部分致密化以形成具有由高密度区域覆盖的低密度区域的双重密度填充间隙。在某些实施方案中，所述方法包括在后续处理操作（例如化学机械平面化（CMP））或接触蚀刻之后进一步处理间隙填充材料的至少一部分。

6. 发明申请

US20120149213A1 BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES 审中-公开
标题翻译：底部填充在高比例比例
公开(公告)号：US20120149213A1
公开(公告)日：2012-06-14
申请号：US13313735
申请日：2011-12-07
申请人： Lakshminarayana Nittala , Karena Shannon , Nerissa Draeger , Megha Rathod , Harald Te Nijenhuis , Bart Van Schravendijk , Michael Danek
发明人： Lakshminarayana Nittala , Karena Shannon , Nerissa Draeger , Megha Rathod , Harald Te Nijenhuis , Bart Van Schravendijk , Michael Danek
IPC分类号： H01L21/31 , C23C16/02 , C23C16/40
CPC分类号： C23C16/401 , C23C16/02 , C23C16/045 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02274 , H01L21/02315 , H01L21/02318 , H01L21/67207 , H01L21/76224
摘要： Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance subsequent bottom up fill of the gap. In certain embodiments, the treatment involves exposing the surface to activated species, such as activated species of one or more of nitrogen, oxygen, and hydrogen. In certain embodiments, the treatment involves exposing the surface to a plasma generated from a mixture of nitrogen and oxygen. The treatment may enable uniform nucleation of the flowable dielectric film, reduce nucleation delay, increase deposition rate and enhance feature-to-feature fill height uniformity.
摘要翻译：提供了用可流动电介质材料填充间隙的新颖方法。根据各种实施例，所述方法包括在间隙上执行表面处理以增强间隙的随后的向上填充。在某些实施方案中，处理包括将表面暴露于活化物质，例如氮，氧和氢中的一种或多种的活化物质。在某些实施方案中，处理包括将表面暴露于由氮和氧的混合物产生的等离子体。该处理可以实现可流动电介质膜的均匀成核，减少成核延迟，增加沉积速率并增强特征 - 特征填充高度均匀性。

7. 发明授权

US08278216B1 Selective capping of copper 有权
标题翻译：铜的选择性封盖
公开(公告)号：US08278216B1
公开(公告)日：2012-10-02
申请号：US11506761
申请日：2006-08-18
申请人： Glenn Alers , Nerissa Draeger , Michael Carolus , Julie Carolus, legal representative
发明人： Glenn Alers , Nerissa Draeger , Michael Carolus
IPC分类号： H01L21/44
CPC分类号： C23C16/04 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76849
摘要： The present invention provides methods of selectively depositing refractory metal and metal nitride cap layers onto copper lines inlaid in a dielectric layer. The methods result in formation of a cap layer on the copper lines without significant formation on the surrounding dielectric material. The methods typically involve exposing the copper lines to a nitrogen-containing organo-metallic precursor and a reducing agent under conditions that the metal or metal nitride layer is selectively deposited. In a particular embodiment, an amino-containing tungsten precursor is used to deposit a tungsten nitride layer. Deposition methods such as CVD or ALD may be used.
摘要翻译：本发明提供了将难熔金属和金属氮化物覆盖层选择性地沉积在嵌入介电层中的铜线上的方法。该方法导致在铜线上形成覆盖层，而不会在周围的电介质材料上形成明显的形成。所述方法通常包括在选择性沉积金属或金属氮化物层的条件下将铜线暴露于含氮有机金属前体和还原剂。在一个具体实施方案中，使用含氨基的钨前体沉积氮化钨层。可以使用CVD或ALD等沉积方法。

8. 发明授权

US08058179B1 Atomic layer removal process with higher etch amount 有权
标题翻译：具有更高蚀刻量的原子层去除工艺
公开(公告)号：US08058179B1
公开(公告)日：2011-11-15
申请号：US12343102
申请日：2008-12-23
申请人： Nerissa Draeger , Harald te Nijenhuis , Henner Meinhold , Bart van Schravendijk , Lakshmi Nittala
发明人： Nerissa Draeger , Harald te Nijenhuis , Henner Meinhold , Bart van Schravendijk , Lakshmi Nittala
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/76837
摘要： Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process.
摘要翻译：实现更高的总体蚀刻速率和原子层去除（ALR）的吞吐量。反应是一种自限制过程，因此限制了每个循环可蚀刻的材料的总量。通过在反应操作之间泵送工艺站，反应部分地“重新设置”。通过多次曝光通过泵浦ALR工艺实现更高的总体蚀刻速率。

9. 发明授权

US07629227B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US07629227B1
公开(公告)日：2009-12-08
申请号：US11925514
申请日：2007-10-26
申请人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger
发明人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。催化剂可以并入到一种反应物中和/或作为单独的反应物引入。还提供了将可流动膜转化为固体电介质膜的方法。本发明的方法可用于对高纵横比间隙进行线或填充，包括具有3:1至10:1的纵横比的间隙。

10. 发明申请

US20130230987A1 FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE 有权
公开(公告)号：US20130230987A1
公开(公告)日：2013-09-05
申请号：US13493936
申请日：2012-06-11
申请人： Nerissa Draeger , Karena Shannon , Bart van Schravendijk , Kaihan Ashtiani
发明人： Nerissa Draeger , Karena Shannon , Bart van Schravendijk , Kaihan Ashtiani
IPC分类号： H01L21/268
CPC分类号： H01L21/0234 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/02299 , H01L21/02337 , H01L21/02343 , H01L21/02348 , H01L21/31111
摘要： Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

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