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1. 发明授权

US06894311B2 Active matrix substrate for liquid crystal display utilizing interconnection lines formed from multilayered films that include an aluminum-neodymium alloy layer 有权
标题翻译：使用由包括铝 - 钕合金层的多层膜形成的互连线的液晶显示器的有源矩阵基板
公开(公告)号：US06894311B2
公开(公告)日：2005-05-17
申请号：US10151544
申请日：2002-05-20
申请人： Akitoshi Maeda , Hiroaki Tanaka , Shigeru Kimura , Satoshi Kimura
发明人： Akitoshi Maeda , Hiroaki Tanaka , Shigeru Kimura , Satoshi Kimura
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/28 , H01L21/306 , H01L21/3205 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/786 , H01L23/532 , G02F1/1345 , H01L31/0392
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said Al—Nd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.
摘要翻译：有源矩阵基板包括TFT的矩阵阵列。双层膜包括铝 - 钕（Al-Nd）合金的底层和高熔点金属的上层。双层膜形成用于连接到TFT的第一互连线。三层膜包括所述高熔点金属的下层，所述Al-Nd合金的中间层和高熔点金属的上层。三层膜形成用于连接到TFT的第二互连线。

2. 发明授权

US07037766B2 Method of fabricating an active matrix substrate for liquid crystal display utilizing interconnection lines formed from multilayered films that include an aluminum-neodymium alloy layer 有权
标题翻译：使用由多层膜形成的互连线制造用于液晶显示器的有源矩阵基板的方法包括铝 - 钕合金层
公开(公告)号：US07037766B2
公开(公告)日：2006-05-02
申请号：US10793086
申请日：2004-03-04
申请人： Akitoshi Maeda , Hiroaki Tanaka , Shigeru Kimura , Satoshi Kimura
发明人： Akitoshi Maeda , Hiroaki Tanaka , Shigeru Kimura , Satoshi Kimura
IPC分类号： H01L21/84 , H01L21/441
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： An active matrix substrate comprises a matrix array of TFTs. A double-layered film includes an under-layer of aluminum-neodymium (Al—Nd) alloy and an over-layer of high melting point metal. The double-layered film forms first interconnection lines for connection to the TFTs. A triple-layered film includes an under-layer of said high melting point metal, a middle-layer of said Al—Nd alloy and an over-layer of the high melting point metal. The triple-layered film forms second interconnection lines for connection to the TFTs.
摘要翻译：有源矩阵基板包括TFT的矩阵阵列。双层膜包括铝 - 钕（Al-Nd）合金的底层和高熔点金属的上层。双层膜形成用于连接到TFT的第一互连线。三层膜包括所述高熔点金属的下层，所述Al-Nd合金的中间层和高熔点金属的上层。三层膜形成用于连接到TFT的第二互连线。

3. 发明申请

US20050248521A1 LCD device having scanning lines and common lines 有权
公开(公告)号：US20050248521A1
公开(公告)日：2005-11-10
申请号：US11152422
申请日：2005-06-14
申请人： Shigeru Kimura , Hiroaki Tanaka , Akira Fujita , Kiyofumi Kudou , Takahiko Watanabe , Hiroyuki Uchida , Akitoshi Maeda
发明人： Shigeru Kimura , Hiroaki Tanaka , Akira Fujita , Kiyofumi Kudou , Takahiko Watanabe , Hiroyuki Uchida , Akitoshi Maeda
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1368 , G09F9/00 , G09G3/36
CPC分类号： G02F1/134363 , G02F1/1345
摘要： An active matrix LCD device includes a TFT panel, a counter panel and liquid crystal interposed therebetween. The TFT panel includes a plurality of scanning lines and a plurality of common lines formed in one layer and extending in a row direction, and a plurality of signal lines extending in a column direction. A coupling line for coupling the common lines together is disposed outside the pixel array of the TFT panel, such as in a TCP mounted on the TFT panel and mounting thereon a driver IC for driving the scanning lines.

4. 发明授权

US06930741B2 LCD device having scanning lines and common lines 有权
标题翻译：具有扫描线和公共线的LCD装置
公开(公告)号：US06930741B2
公开(公告)日：2005-08-16
申请号：US09965566
申请日：2001-09-27
申请人： Shigeru Kimura , Hiroaki Tanaka , Akira Fujita , Kiyofumi Kudou , Takahiko Watanabe , Hiroyuki Uchida , Akitoshi Maeda
发明人： Shigeru Kimura , Hiroaki Tanaka , Akira Fujita , Kiyofumi Kudou , Takahiko Watanabe , Hiroyuki Uchida , Akitoshi Maeda
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1368 , G09F9/00
CPC分类号： G02F1/134363 , G02F1/1345
摘要： An active matrix LCD device includes a TFT panel, a counter panel and liquid crystal interposed therebetween. The TFT panel includes a plurality of scanning lines and a plurality of common lines formed in one layer and extending in a row direction, and a plurality of signal lines extending in a column direction. A coupling line for coupling the common lines together is disposed outside the pixel array of the TFT panel, such as in a TCP mounted on the TFT panel and mounting thereon a driver IC for driving the scanning lines.
摘要翻译：有源矩阵LCD装置包括TFT面板，对面板和插入其间的液晶。 TFT面板包括形成在一个层中并沿行方向延伸的多条扫描线和多条公共线，以及沿列方向延伸的多条信号线。用于将公共线连接在一起的耦合线设置在TFT面板的像素阵列的外部，诸如安装在TFT面板上的TCP中，并且安装用于驱动扫描线的驱动器IC。

5. 发明授权

US07626671B2 LCD device having scanning lines and common lines 有权
公开(公告)号：US07626671B2
公开(公告)日：2009-12-01
申请号：US11152422
申请日：2005-06-14
申请人： Shigeru Kimura , Hiroaki Tanaka , Akira Fujita , Kiyofumi Kudou , Takahiko Watanabe , Hiroyuki Uchida , Akitoshi Maeda
发明人： Shigeru Kimura , Hiroaki Tanaka , Akira Fujita , Kiyofumi Kudou , Takahiko Watanabe , Hiroyuki Uchida , Akitoshi Maeda
IPC分类号： G02F1/1345
CPC分类号： G02F1/134363 , G02F1/1345
摘要： An active matrix LCD device includes a TFT panel, a counter panel and liquid crystal interposed therebetween. The TFT panel includes a plurality of scanning lines and a plurality of common lines formed in one layer and extending in a row direction, and a plurality of signal lines extending in a column direction. A coupling line for coupling the common lines together is disposed outside the pixel array of the TFT panel, such as in a TCP mounted on the TFT panel and mounting thereon a driver IC for driving the scanning lines.

6. 发明授权

US06890783B2 Active matrix substrate plate and manufacturing method therefor 失效
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US06890783B2
公开(公告)日：2005-05-10
申请号：US10242011
申请日：2002-09-12
申请人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
发明人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/00 , H01L21/3205 , H01L21/336 , H01L21/84 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/036
CPC分类号： G02F1/134363
摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
摘要翻译：使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极，通过蚀刻除去沟道间隙的+非晶硅层。在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

7. 发明授权

US06632696B2 Manufacturing method of active matrix substrate plate and manufacturing method therefor 有权
标题翻译：有源矩阵基板的制造方法及其制造方法
公开(公告)号：US06632696B2
公开(公告)日：2003-10-14
申请号：US09745657
申请日：2000-12-20
申请人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
发明人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
IPC分类号： H01L2100
CPC分类号： G02F1/134363
摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
摘要翻译：使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到提供TFT部分的半导体层。在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。

8. 发明授权

US07663146B2 Active matrix addressing liquid-crystal display device 有权
标题翻译：有源矩阵寻址液晶显示装置
公开(公告)号：US07663146B2
公开(公告)日：2010-02-16
申请号：US10028778
申请日：2001-12-28
申请人： Hiroaki Tanaka , Akira Fujita , Shigeru Kimura , Akitoshi Maeda , Takasuke Hayase
发明人： Hiroaki Tanaka , Akira Fujita , Shigeru Kimura , Akitoshi Maeda , Takasuke Hayase
IPC分类号： G02F1/1343
CPC分类号： H01L29/4908 , G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L29/458
摘要： An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.
摘要翻译：提供了一种有源矩阵寻址LCD器件，其具有形成有导电线的有源矩阵基板，其抑制了AI小丘，而不会使线的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了连接可靠性。该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al文件可以用Al合金代替。

9. 发明授权

US07532270B2 Manufacturing method of a liquid crystal display device using a photo resist having regions with different thicknesses, ashing, and reflow processing 有权
标题翻译：使用具有不同厚度的区域的光刻胶的液晶显示装置的制造方法，灰化和回流处理
公开(公告)号：US07532270B2
公开(公告)日：2009-05-12
申请号：US12020390
申请日：2008-01-25
申请人： Yoshiaki Hashimoto , Hiroaki Tanaka , Shigeru Kimura , Syuusaku Kido
发明人： Yoshiaki Hashimoto , Hiroaki Tanaka , Shigeru Kimura , Syuusaku Kido
IPC分类号： G02F1/136 , G02F1/1343
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2001/136236
摘要： A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes the steps of forming a gate electrode metal layer and forming a gate electrode by patterning using photolithography; forming an interlayer insulating film, an a−Si layer, an n+ a−Si layer, and a drain electrode metal layer and forming a drain line and an island by performing patterning, ashing processing, reflow processing using photolithography, and peeling; forming an insulating film on a transparent insulating substrate and forming an insulating film contact used to provide a connection to a source electrode of an island at a specified position by patterning or a printing method; forming a transparent conductive film and forming a pixel electrode and common electrode by patterning using photolithography.
摘要翻译：一种提供宽视角的液晶显示器的制造方法，其制造工艺缩短并提供高可靠性。该方法包括以下步骤：通过使用光刻法进行图案化形成栅极金属层并形成栅电极; 形成层间绝缘膜，a-Si层，n + a-Si层和漏电极金属层，并通过进行图案化，灰化处理，使用光刻法的回流处理和剥离来形成漏极线和岛; 在透明绝缘基板上形成绝缘膜，形成用于通过图案化或打印方法提供到指定位置处的岛状源极的连接的绝缘膜接触; 形成透明导电膜，并通过使用光刻图案化形成像素电极和公共电极。

10. 发明申请

US20080124825A1 MANUFACTURING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置的制造方法
公开(公告)号：US20080124825A1
公开(公告)日：2008-05-29
申请号：US12020390
申请日：2008-01-25
申请人： Yoshiaki Hashimoto , Hiroaki Tanaka , Shigeru Kimura , Syuusaku Kido
发明人： Yoshiaki Hashimoto , Hiroaki Tanaka , Shigeru Kimura , Syuusaku Kido
IPC分类号： H01L33/00
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2001/136236
摘要： A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes a process of forming a gate electrode metal layer, gate insulator, and a—Si layer and forming an island by patterning using photolithography, a process of forming an interlayer insulating film and drain electrode metal layer and forming a drain line by patterning using photolithography, a process of forming an organic insulating film and forming an organic insulating contact used to provide a connection to a source electrode and a drain electrode at a specified position by photolithography, and a process of forming a transparent conductive layer and forming a pixel electrode and common electrode by patterning using photolithography.
摘要翻译：一种提供宽视角的液晶显示器的制造方法，其制造工艺缩短并提供高可靠性。该方法包括通过使用光刻法图案化形成栅电极金属层，栅极绝缘体和a-Si层并形成岛的工艺，形成层间绝缘膜和漏电极金属层的步骤，以及通过图案化形成漏极线使用光刻法，形成有机绝缘膜并形成用于通过光刻在特定位置提供与源电极和漏电极的连接的有机绝缘接触的工艺，以及形成透明导电层并形成像素的工艺电极和公共电极。

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