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    • 1. 发明授权
    • Method for manufacturing display device
    • 显示装置制造方法
    • US08035107B2
    • 2011-10-11
    • US12368759
    • 2009-02-10
    • Takafumi MizoguchiMayumi MikamiYumiko Saito
    • Takafumi MizoguchiMayumi MikamiYumiko Saito
    • H01L29/786
    • H01L21/764H01L27/1288
    • A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
    • 形成第一导电膜,第一绝缘膜,半导体膜,杂质半导体膜,第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻,以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层,源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。
    • 2. 发明授权
    • Electrochemical capacitor
    • 电化学电容器
    • US08755169B2
    • 2014-06-17
    • US12891321
    • 2010-09-27
    • Kazutaka KurikiKiyofumi OginoYumiko Saito
    • Kazutaka KurikiKiyofumi OginoYumiko Saito
    • H01G9/00H01G9/02
    • H01G11/76H01G11/02H01G11/10H01G11/56H01G11/62H01G11/72Y02E60/13
    • An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
    • 提出了能增加容量的电化学电容器。 电化学电容器是在基板的表面平面上形成的正极和负极。 此外,电化学电容器具有电解质,正极和负极与电解质的相同的表面接触。 换句话说,电化学电容器在电解质的表面上具有正极活性物质和负极活性物质,与正极活性物质接触的正极集电体和负极集电体 与负极活性物质接触。 通过上述结构,能够提高电化学电容器的容量。
    • 4. 发明授权
    • Method for manufacturing display device
    • 显示装置制造方法
    • US08901561B2
    • 2014-12-02
    • US13238019
    • 2011-09-21
    • Takafumi MizoguchiMayumi MikamiYumiko Saito
    • Takafumi MizoguchiMayumi MikamiYumiko Saito
    • H01L33/08H01L27/12H01L21/764
    • H01L21/764H01L27/1288
    • A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion.
    • 形成第一导电膜,第一绝缘膜,半导体膜,杂质半导体膜,第二导电膜和第一抗蚀剂掩模; 执行第一蚀刻以暴露第一导电膜的至少一个表面; 在第一导电膜的一部分上进行伴随着侧蚀刻的第二蚀刻,以形成栅电极层; 形成第二抗蚀剂掩模; 执行第三蚀刻以形成源极和漏极电极层,源极和漏极区域以及半导体层; 形成第二绝缘膜; 在第二绝缘膜中形成开口部分以部分地暴露源极或漏极电极层; 在开口部分和第二绝缘膜上选择性地形成像素电极; 并且在与开口部重叠的区域中形成使用该栅电极层形成的支撑部。
    • 7. 发明申请
    • REDOX CAPACITOR AND MANUFACTURING METHOD THEREOF
    • REDOX电容器及其制造方法
    • US20110073991A1
    • 2011-03-31
    • US12891461
    • 2010-09-27
    • Kazutaka KurikiKiyofumi OginoYumiko SaitoJunichiro Sakata
    • Kazutaka KurikiKiyofumi OginoYumiko SaitoJunichiro Sakata
    • H01L27/08H01L21/02
    • H01G11/02H01G9/038H01G9/22H01G11/28H01G11/56H01G11/68H01G11/70H01G11/84H01L21/02565H01L21/02631H01L28/40Y02E60/13
    • To provide a redox capacitor that can be used at room temperature and a manufacturing method thereof. Amorphous semiconductor including hydrogen is used as an electrolyte of a redox capacitor. As a typical example of the amorphous semiconductor including hydrogen, an amorphous semiconductor including a semiconductor element such as amorphous silicon, amorphous silicon germanium, or amorphous germanium can be used. As another example of the amorphous semiconductor including hydrogen, oxide semiconductor including hydrogen can be used. As typical examples of the oxide semiconductor including hydrogen, an amorphous semiconductor including a single-component oxide semiconductor such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, and indium oxide can be given. As another example of oxide semiconductor including hydrogen, a multi-component oxide semiconductor such as InMO3(ZnO)m (m>0 and M is one or more metal elements selected from Ga, Fe, Ni, Mn, and Co) can be used.
    • 提供可在室温下使用的氧化还原电容器及其制造方法。 包括氢的非晶半导体被用作氧化还原电容器的电解质。 作为包括氢的非晶半导体的典型实例,可以使用包括诸如非晶硅,非晶硅锗或无定形锗的半导体元件的非晶半导体。 作为包括氢的非晶半导体的另一例子,可以使用包括氢的氧化物半导体。 作为包括氢的氧化物半导体的典型实例,可以给出包括氧化锌,氧化钛,氧化镍,氧化钒和氧化铟等单组分氧化物半导体的非晶半导体。 作为包含氢的氧化物半导体的另一个实例,可以使用诸如InMO 3(ZnO)m(m> 0和M是选自Ga,Fe,Ni,Mn和Co中的一种或多种金属元素)的多组分氧化物半导体 。
    • 10. 发明申请
    • ELECTROCHEMICAL CAPACITOR
    • 电化学电容器
    • US20110075322A1
    • 2011-03-31
    • US12891321
    • 2010-09-27
    • Kazutaka KurikiKiyofumi OginoYumiko Saito
    • Kazutaka KurikiKiyofumi OginoYumiko Saito
    • H01G9/155
    • H01G11/76H01G11/02H01G11/10H01G11/56H01G11/62H01G11/72Y02E60/13
    • An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
    • 提出了能增加容量的电化学电容器。 电化学电容器是在基板的表面平面上形成的正极和负极。 此外,电化学电容器具有电解质,正极和负极与电解质的相同的表面接触。 换句话说,电化学电容器在电解质的表面上具有正极活性物质和负极活性物质,与正极活性物质接触的正极集电体和负极集电体 与负极活性物质接触。 通过上述结构,能够提高电化学电容器的容量。