基本信息:
- 专利标题： 襯底熱處理裝置
- 专利标题（英）：Substrate heat treatment apparatus
- 专利标题（中）：衬底热处理设备
- 申请号：TW106100637 申请日：2017-01-09
- 公开(公告)号：TW201802983A 公开(公告)日：2018-01-16
- 发明人： 王暉 , WANG, HUI , 楊宏超 , YANG, HONG-CHAO , 吳均 , WU, JUN , 王文軍 , WANG, WEN-JUN , 陳福平 , CHEN, FU-PING , 方志友 , FANG, ZHI-YOU
- 申请人： 盛美半導體設備(上海)有限公司 , ACM RESEARCH (SHANGHAI) INC.
- 专利权人： 盛美半導體設備(上海)有限公司,ACM RESEARCH (SHANGHAI) INC.
- 当前专利权人： 盛美半導體設備(上海)有限公司,ACM RESEARCH (SHANGHAI) INC.
- 代理人： 蔡坤財; 李世章
- 优先权： PCT/CN2016/076681 20160318
- 主分类号： H01L21/67
- IPC分类号： H01L21/67
A substrate heat treatment apparatus for heat treating a substrate, comprising a bake plate, a plurality of support components, a baffle plate, and a driving device. The bake plate defines at least one gas passage. The plurality of support components support the substrate. The baffle plate is fixed on a top surface of the bake plate. The baffle plate surrounds the substrate and a gap is formed between an inner circumferential wall of the baffle plate and the substrate. A driving device drives the plurality of support components to move up or down. When heat treating the substrate, a hot gas is supplied to the space between the substrate and the top surface of the bake plate through the gas passage of the bake plate, and the hot gas flows out through the gap for-med between the inner circumferential wall of the baffle plate and the substrate.
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |