To provide: a developer which does not cause pattern collapse even when forming fine patterns; and a pattern-forming process using the same. A developer to be used in a lithographic process, comprising both a polymer for forming a dry-etching mask and an organic solvent; a developer, wherein the polymer is a resin different from the resist; a developer, which is to be applied after the exposure of the resist; a developer, wherein the solvent is butyl acetate or a mixed solvent consisting of both butyl acetate and an alcohol, or alternatively, 2-pentanone or a mixed solvent consisting of both 2-pentanone and an alcohol; and a process for producing semiconductor devices, which includes a step (A) of applying a resist on a semiconductor substrate to form a resist layer, and subjecting the resist layer to exposure, a step (B) of bringing a developer into contact with the surface of the resist layer to form a polymer layer between the resist patterns, and a step (C) of removing the resist layer by dry etching to form a reverse pattern of the polymer.