基本信息:
- 专利标题： 사파이어 잉곳 제조용 성장로의 사이드 실드
- 专利标题（英）：Side shield of crucible for manufacturing sapphire ingot
- 专利标题（中）：用于制造SAPPHIRE INGOT的可溶性粘合剂
- 申请号：KR1020120000202 申请日：2012-01-02
- 公开(公告)号：KR101367762B1 公开(公告)日：2014-02-27
- 发明人： 박종인 , 홍영곤 , 김현수 , 이종찬
- 申请人： 주식회사 케이엠에이치하이텍 , 비아이신소재 주식회사
- 申请人地址： 충청남도 아산시 음봉면 연암율금로 ***
- 专利权人： 주식회사 케이엠에이치하이텍,비아이신소재 주식회사
- 当前专利权人： 주식회사 케이엠에이치하이텍,비아이신소재 주식회사
- 当前专利权人地址： 충청남도 아산시 음봉면 연암율금로 ***
- 代理人： 조영현; 나승택
- 主分类号： C30B35/00
- IPC分类号： C30B35/00 ; C30B29/20 ; C30B11/00
The present invention relates to a side shield to the sapphire ingot manufacture growth, the side shield to the sapphire ingot manufacture growth in accordance with the present invention two or more cylindrical heat insulating plate is superimposed arranged to surround the side of a sapphire ingot growing a multi-layer; and the spacer is interposed between the cylindrical heat insulating plates to keep the spacing between the cylindrical heat insulating plate; And, fastening the fastening member to pass through the said two or more cylindrical heat insulating plate; it characterized in that it comprises a. In this way, the side shield of the side shield shape accuracy and the ingot for producing a sapphire growth to facilitate the securing of a placement accuracy of that affect the formation of the temperature distribution in the ingot as a sapphire growth is provided.
公开/授权文献:
- KR1020130078995A 사파이어 잉곳 제조용 성장로의 사이드 실드 公开/授权日：2013-07-10