基本信息:
- 专利标题： 반도체 집적 회로 및 프로세서
- 专利标题（英）：Semiconductor integrated circuit and processor
- 专利标题（中）：半导体集成电路和处理器
- 申请号：KR1020120049092 申请日：2012-05-09
- 公开(公告)号：KR101363656B1 公开(公告)日：2014-02-14
- 发明人： 후지따시노부 , 아베게이꼬
- 申请人： 가부시끼가이샤 도시바
- 申请人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 专利权人： 가부시끼가이샤 도시바
- 当前专利权人： 가부시끼가이샤 도시바
- 当前专利权人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 代理人： 장수길; 박충범; 이중희
- 优先权： JPJP-P-2011-166070 2011-07-28
- 主分类号： G11C11/41
- IPC分类号： G11C11/41
In one embodiment, the first inverter, the second inverter, once the first transistor is connected to the first bit line is connected to a first input terminal of the other end of the first inverter, includes a second transistor, one end of the first claim to be connected to the first output terminal of the inverter and the other end is connected to the second bit line first element group, the third transistor and the self-containing the magnetoresistive element to resist this change, once the first inverter and the second inverter being connected, there is provided a semiconductor integrated circuit including a second element group is connected to the other end to a first terminal to which a predetermined potential is applied in accordance with the operation.
公开/授权文献:
- KR1020130014336A 반도체 집적 회로 및 프로세서 公开/授权日：2013-02-07