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    • 2. 发明申请
    • 不揮発論理回路を駆動する方法
    • 驱动非易失逻辑电路的方法
    • WO2011142067A1
    • 2011-11-17
    • PCT/JP2011/001116
    • 2011-02-25
    • パナソニック株式会社金子 幸広
    • 金子 幸広
    • H03K19/185H01L21/822H01L27/04H03K19/20
    • H01L27/10G11C11/22H01L27/101H01L27/11502
    •  不揮発論理回路(20)では、強誘電体膜(13)の長手方向に沿って、第1の入力電極(17a)および第2の入力電極(17b)は、電源電極(15)および出力電極(16)の間に挟まれている。当該長手方向に直交する方向に沿って、第1の入力電極(17a)は第2の入力電極(17b)に隣接する。本発明の不揮発論理回路(20)の駆動方法は、4つの状態から選択される1つの状態を当該状態に応じてそれぞれ規定された電圧V1、Va、およびVbをそれぞれ制御電極(12)、第1の入力電極(17a)、および第2の入力電極(17b)に印加して不揮発論理回路(20)に書き込む工程と、電源電極(15)および出力電極(16)の間に電圧を印加することによって生じた電流に基づいて高抵抗状態または低抵抗状態のどちらを不揮発論理回路(20)が有するかを決定する工程と、を具備する。
    • 在非易失性逻辑电路(20)中,沿着铁电体膜(13)的长度方向,将第一输入电极(17a)和第二输入电极(17b)夹在电源电极(15)和 输出电极(16)。 沿垂直于纵向的方向,第一输入电极(17a)与第二输入电极(17b)相邻。 公开的驱动非易失性逻辑电路(20)的方法具有通过施加电压V1,Va和Vb将从四种状态中选出的一种状态写入非易失性逻辑电路(20)的步骤 根据选择的状态对控制电极(12),第一输入电极(17a)和第二输入电极(17b)中的每一个进行控制。 以及基于通过在电源电极(15)之间施加电压而产生的电流来确定非易失性逻辑电路(20)将具有的高电阻状态或低电阻状态中的哪一个的步骤 )和输出电极(16)。
    • 3. 发明申请
    • LEVEL SHIFTING MULTIPLEXING CIRCUIT FOR CONNECTING A TWO CONDUCTOR FULL DUPLEX BUS TO A BIDIRECTIONAL SINGLE CONDUCTOR BUS
    • 用于将两个导体全双工总线连接到双向单向导体总线的水平移位多路复用电路
    • WO2007092548A1
    • 2007-08-16
    • PCT/US2007/003349
    • 2007-02-07
    • KYOCERA WIRELESS CORP.TAYLOR, John, Philip
    • TAYLOR, John, Philip
    • H03K19/185G06F13/40
    • H03K19/01759G06F13/4072H03K17/002H04L5/14H04L5/1461H04L5/16H04L25/0272
    • A level shifting multiplexing circuit provides an interface between a two conductor full duplex bus (two conductor bus 102) and a single conductor bidirectional half duplex bus (single conductor bus 106) where the two conductor bus (102) is operates at a first supply voltage (VDDl) and the single conductor bus (106) operates at a second supply voltage (VDD2). A first switching circuit (116) connected between the single conductor bus (105) and the reception conductor (112) of the two conductor bus (102) is configured to provide a low logic signal to the reception conductor (112) when a first switching voltage threshold is exceeded and to provide a high logic signal, otherwise. A second switching circuit (118) connected between the single conductor bus (106) and the transmission conductor (110) of the two conductor bus (102) is configured to provide a voltage less than the first switching voltage threshold when voltage at the transmission conductor (110) exceeds a second switching voltage threshold unless a high logic signal is received on the single conductor bus (106). The second switching circuit (118) is further configured to provide a voltage greater than the first switching voltage when the transmission conductor voltage exceeds the second switching voltage threshold unless a low logic signal is received on the single conductor bus (106).
    • 电平转换多路复用电路提供两导体全双工总线(两导体总线102)和单导体双向半双工总线(单导体总线106)之间的接口,其中两个导体总线(102)以第一电源电压 (VDD1)和单导体总线(106)工作在第二电源电压(VDD2)。 连接在单导体总线(105)和两个导体总线(102)的接收导体(112)之间的第一开关电路(116)被配置为当第一开关(112)向接收导体(112)提供低逻辑信号 超过电压阈值并提供高逻辑信号,否则。 连接在单导体总线(106)和两个导体总线(102)的传输导体(110)之间的第二开关电路(118)被配置为当传输导体上的电压时提供小于第一开关电压阈值的电压 (110)超过第二开关电压阈值,除非在单导体总线(106)上接收到高逻辑信号。 第二开关电路(118)还被配置为当发送导体电压超过第二开关电压阈值时提供大于第一开关电压的电压,除非在单导体总线(106)上接收到低逻辑信号。
    • 7. 发明申请
    • MEMRISTOR BASED LOGIC GATE
    • 基于MEMRISTOR的逻辑门
    • WO2017144862A1
    • 2017-08-31
    • PCT/GB2017/050431
    • 2017-02-20
    • OXFORD BROOKES UNIVERSITY
    • JABIR, Abusaleh MuhammadYANG, XiaohanADEYEMO, Adedotun Adedeji
    • G11C13/00H03K19/185H03K19/19
    • G11C13/0007G06F7/501H03K19/017509H03K19/173H03K19/20H03K19/21
    • A logic gate comprises a first input (A) and a second input (B), and further comprises a first memristor (M 1 ), a second memristor (M 2 ), a third memristor (M 3 ), and a fourth memristor (M 4 ), each memristor having a positive terminal and a negative terminal. The logic gate also comprises a first output (12) and a second output (14). The memristors are connected in a bridge arrangement whereby: the negative terminal of the first memristor and the positive terminal of the second memristor are connected in common to the first input;the negative terminal of the third memristor and the positive terminal of the fourth memristor are connected in common to the second input; the negative terminal of the second memristor and the negative terminal of the fourth memristor are connected in common to the first output; and the positive terminal of the first memristor and the positive terminal of the third memristor are connected in common to the second output. In use, the voltage of at least one of the outputs, or the voltage difference between the first and second outputs, corresponds to the result of a logic operation relative to voltages applied to the first and second inputs.
    • 逻辑门包括第一输入端(A)和第二输入端(B),并且还包括第一忆阻器(M 1),第二忆阻器(M 1) ,第三忆阻器(M 3)和第四忆阻器(M 4),每个忆阻器具有正端子和负端子 。 逻辑门还包括第一输出(12)和第二输出(14)。 忆阻器以桥接方式连接,其中:第一忆阻器的负极端子和第二忆阻器的正极端子共同连接到第一输入端;第三忆阻器的负极端子和第四忆阻器的正极端子是 共同连接到第二输入; 第二忆阻器的负端和第四忆阻器的负端共同连接到第一输出端; 并且第一忆阻器的正极端子和第三忆阻器的正极端子共同连接到第二输出端。 在使用中,至少一个输出的电压或者第一和第二输出之间的电压差对应于相对于施加到第一和第二输入的电压的逻辑操作的结果。
    • 8. 发明申请
    • A FERROELECTRIC DATA PROCESSING DEVICE
    • 铁电数据处理装置
    • WO9912170A3
    • 1999-05-06
    • PCT/NO9800237
    • 1998-08-13
    • OPTICOM ASGUDESEN HANS GUDENORDAL PER ERIKLEISTAD GEIRR I
    • GUDESEN HANS GUDENORDAL PER-ERIKLEISTAD GEIRR I
    • G11C11/22H01L21/8246H01L27/06H01L27/105H01L27/115H03K19/177H03K19/185
    • H01L27/11502G11C11/22H01L27/0688
    • In a ferroelectric data processing device for processing and/or storage of data with passive or electrical addressing a data-carrying medium is used in the form of a thin film (1) of ferroelectric material which by an applied electric field is polarized to determined polarization states or switched between these and is provided as a continuous layer in or adjacent to electrode structures in the form of a matrix. A logic element (4) is formed at the intersection between an x electrode (2) and a y electrode (3) of the electrode matrix. The logic element (4) is addressed by applying to the electrodes (2, 3) a voltage greater than the coercivity field of the ferroelectric material. Dependent on the polarization state and the form of the hysteresis loop of the ferroelectric material a distinct detection of the polarization state in the logic element (4) is obtained and it may also be possible to switch between the polarization states of the logic element, which hence may be used for implementing a bistable switch or a memory cell. The data processing device according to the invention may be stacked layerwise if the separate layers are separated by an electrical isolating layer and hence be used for implementing volumetric data processing devices.
    • 在用于处理和/或存储具有无源或电寻址数据的铁电数据处理设备中,以铁电材料的薄膜(1)的形式使用数据载体介质,所述铁电材料的薄膜(1)通过施加的电场被极化以确定极化 状态或者在它们之间切换,并且以矩阵形式的电极结构中或附近的连续层提供。 逻辑元件(4)形成在电极矩阵的x电极(2)和y电极(3)之间的交叉处。 逻辑元件(4)通过向电极(2,3)施加大于铁电材料的矫顽力场的电压来寻址。 取决于铁电材料的偏振态和磁滞回线的形式,可以获得逻辑元件(4)中偏振态的明显检测,并且还可以在逻辑元件的偏振态之间切换,其中 因此可以用于实现双稳态开关或存储单元。 如果分离的层被电隔离层隔开并且因此用于实现容积式数据处理设备,则根据本发明的数据处理设备可以层叠地层叠。