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1. 发明申请

WO0241361A3 METHOD FOR FABRICATING INTERFACIAL OXIDE IN A TRANSISTOR AND RELATED STRUCTURE 审中-公开
标题翻译：在晶体管和相关结构中制备界面氧化物的方法
公开(公告)号：WO0241361A3
公开(公告)日：2003-04-03
申请号：PCT/US0143219
申请日：2001-11-19
申请人： CONEXANT SYSTEMS INC
发明人： JOSHI PANKAJ N , SCHUEGRAF KLAUS F
IPC分类号： H01L21/316 , H01L21/331 , C23C13/10 , B05D7/22 , C23C16/00
CPC分类号： H01L29/66242 , H01L21/02126 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02312 , H01L21/31662
摘要： According to a disclosed embodiment, a gas is supplied at a certain partial pressure for a chemical reaction with a top surface of a base (120) in a transistor (100). The top surface of the base (120) is heated to a certain temperature to promote the chemical reaction. For example, the gas can be oxygen, the base (120) can be an epitaxial single crystal silicon-germanium base of a heterojunction bipolar transistor ("HBT"), and the chemical reaction can be oxidation of the silicon in the top surface of the silicon-germanium base (120). In one embodiment of the invention, the partial pressure of oxygen is maintained at 0.1 atmosphere and the top surface of the base (120) is heated using rapid thermal processing ("RTP") to a temperature of 500 °C. The chemical reaction forms a dielectric layer on the top surface of the base (120). For example, using oxygen as stated above, a dielectric layer of silicon oxide ("interfacial oxide") is formed. Controlling the thickness and density of the interfacial oxide causes the gain of the transistor (100) to be as desired. For example, using oxygen in the silicon-germanium HBT at 0.1 atmosphere partial pressure, and RTP to heat the top surface of the base (120) of the HBT to 500 C, an interfacial oxide is formed with thickness approximately 9.0 to 13.0 Angstroms and area density in a range of approximately 1 * 10 to 4 *10 atoms per square centimeter, which causes the gain of the HBT to be the desired value of approximately 100.0.
摘要翻译：根据所公开的实施例，以一定的分压供应气体以与晶体管（100）中的基极（120）的顶表面进行化学反应。将基底（120）的顶表面加热到一定温度以促进化学反应。例如，气体可以是氧，基极（120）可以是异质结双极晶体管（“HBT”）的外延单晶硅 - 锗基底，并且化学反应可以是氧化顶部表面的硅硅 - 锗基底（120）。在本发明的一个实施方案中，氧的分压保持在0.1大气压，并且使用快速热处理（“RTP”）将基体（120）的顶表面加热到500℃的温度。化学反应在基底（120）的顶表面上形成介电层。例如，如上所述使用氧，形成氧化硅的介电层（“界面氧化物”）。控制界面氧化物的厚度和密度导致晶体管（100）的增益是所需的。例如，在0.1分压的硅 - 锗HBT中使用氧，并且将RTP将HBT的基底（120）的顶表面加热至500℃，形成厚度约为9.0至13.0埃的界面氧化物，面积密度在每平方厘米约1×10 15至4×10 15原子的范围内，这导致HBT的增益为约100.0的期望值。

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