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    • 4. 发明申请
    • 電圧発生回路
    • 电压发生电路
    • WO2014200027A1
    • 2014-12-18
    • PCT/JP2014/065492
    • 2014-06-11
    • シャープ株式会社
    • 石丸 昌晃
    • G05F1/613G05F3/22
    • G05F3/16G05F3/227H03F1/30H03F3/189
    •  電圧発生回路であって、電源端子104が抵抗106、107によって電圧出力端子105に接続されている。ベースとコレクタが抵抗102で接続され、エミッタが接地されたトランジスタ103と、ベースとコレクタが抵抗108で接続され、ベースが電圧出力端子105に接続され、エミッタがトランジスタ103のコレクタに接続されたトランジスタ109と、ベースとコレクタが抵抗110で接続され、ベースが抵抗112、113によって電源端子117に接続され、エミッタはトランジスタ103のベースに接続されているトランジスタ111とを備えている。
    • 提供一种电压产生电路,其中电源端子(104)通过电阻(106,107)连接到电压输出端子(105)。 本发明提供:晶体管(103),其中发射极接地,并且基极和集电极通过电阻(102)连接; 其中发射极连接到晶体管(103)的集电极并且基极和集电极通过电阻器(108)连接的晶体管(109),所述基极连接到电压输出端子(105); 以及其中发射极连接到晶体管(103)的基极并且基极和集电极通过电阻器(110)连接的晶体管(111),所述基极通过电阻器(110)连接到电源端子(117) 112,113)。
    • 5. 发明申请
    • ULTRA-LOW NOISE VOLTAGE REFERENCE CIRCUIT
    • 超低噪声电压参考电路
    • WO2013116749A3
    • 2014-05-08
    • PCT/US2013024472
    • 2013-02-01
    • ANALOG DEVICES INC
    • KALB ARTHUR JSHAFRAN JOHN SAWA
    • G05F3/20G05F3/16G05F3/30
    • G05F3/16G05F3/20G05F3/30
    • A voltage reference circuit comprises a plurality of &Dgr;VBE cells, each comprising four bipolar junction transistors (BJTs) connected in a cross-quad configuration and arranged to generate a &Dgr;VBE voltage. The plurality of &Dgr;VBE cells are stacked such that their &Dgr;VBE voltages are summed. A last stage is coupled to the summed &Dgr;VBE voltages and arranged to generate one or more VBE voltages which are summed with the &Dgr;VBE voltages to provide a reference voltage. This arrangement serves to cancel out first-order noise and mismatch associated with the two current sources present in each &Dgr;VBE cell, such that the voltage reference circuit provides ultra-low 1/f noise in the bandgap voltage output.
    • 一个电压参考电路包括多个&Dgr; VBE单元,每个单元包括四个双极结型晶体管(BJT),它们以交叉 - 四边形配置连接并被布置成产生&Dgr; VBE电压。 堆叠多个&Dgr; VBE单元,使得它们的&Dgr; VBE电压相加。 最后阶段耦合到总和的Dgr; VBE电压,并被布置成产生一个或多个VBE电压,其与Dgr; VBE电压相加以提供参考电压。 这种布置用于消除与每个&Dgr; VBE单元中存在的两个电流源相关联的一阶噪声和失配,使得该参考电压在带隙电压输出中提供超低的1 / f噪声。
    • 6. 发明申请
    • ULTRA-LOW NOISE VOLTAGE REFERENCE CIRCUIT
    • 超低噪声电压参考电路
    • WO2013116749A2
    • 2013-08-08
    • PCT/US2013/024472
    • 2013-02-01
    • ANALOG DEVICES, INC.
    • KALB, Arthur, J.SHAFRAN, John, Sawa
    • G05F3/30
    • G05F3/16G05F3/20G05F3/30
    • A voltage reference circuit comprises a plurality of ΔV BE cells, each comprising four bipolar junction transistors (BJTs) connected in a cross-quad configuration and arranged to generate a ΔV BE voltage. The plurality of ΔV BE cells are stacked such that their ΔV BE voltages are summed. A last stage is coupled to the summed ΔV BE voltages and arranged to generate one or more V BE voltages which are summed with the ΔV BE voltages to provide a reference voltage. This arrangement serves to cancel out first-order noise and mismatch associated with the two current sources present in each ΔV BE cell, such that the voltage reference circuit provides ultra-low 1/f noise in the bandgap voltage output.
    • 一个电压参考电路包括多个DeltaVBE电池,每个都包括四个双极结型晶体管(BJT),它们以十字交叉配置连接并且被布置成产生一个ΔVV电压。 多个DeltaVBE单元被堆叠,使得它们的DeltaVBE电压相加。 最后一级耦合到总和的ΔVVV电压并被布置成产生一个或多个VBE电压,它们与DeltaVBE电压相加以提供参考电压。 这种布置用于抵消与每个DeltaVBE单元中存在的两个电流源相关联的一阶噪声和失配,使得电压参考电路在带隙电压输出中提供超低的1 / f噪声。
    • 7. 发明申请
    • REFERENCE CIRCUIT ARRANGEMENT AND METHOD FOR GENERATING A REFERENCE VOLTAGE
    • 参考电路布置和产生参考电压的方法
    • WO2013017567A1
    • 2013-02-07
    • PCT/EP2012/064884
    • 2012-07-30
    • AMS AGPAGLINO, LorenzoVERRI, Simone
    • PAGLINO, LorenzoVERRI, Simone
    • G05F3/26G05F3/30
    • G05F3/262G05F3/16G05F3/20G05F3/26G05F3/30
    • Reference circuit arrangement according to this invention comprises a branched current path (BE) connecting a first and second terminal (T+, T-) via an intermediate terminal (TN). The intermediate terminal (TN) is connected to a reference terminal (GND). A current path (PTAT) is coupled between the first and second terminal (T+, T-) via the reference terminal (GND). A feedback loop (FB) is connected to the first and second terminal (T+, T-) and designed to control, at the first and second terminal (T+, T-), a virtual ground potential. A reference path (REF) is connected to the feedback loop (FB) having a reference input for receiving from the feedback loop a reference current (Iref) and reference output (Vref) to provide a reference voltage.
    • 根据本发明的参考电路装置包括经由中间端子(TN)连接第一和第二端子(T +,T)的分支电流路径(BE)。 中间端子(TN)连接到参考端子(GND)。 电流路径(PTAT)通过参考端(GND)耦合在第一和第二端(T +,T-)之间。 反馈回路(FB)连接到第一和第二端子(T +,T),并被设计成在第一和第二端子(T +,T)处控制虚拟接地电位。 参考路径(REF)连接到具有用于从反馈回路接收参考电流(Iref)和参考输出(Vref)的参考输入的反馈回路(FB),以提供参考电压。
    • 8. 发明申请
    • A DIRECT COUPLED BIASING CIRCUIT FOR HIGH FREQUENCY APPLICATIONS
    • 用于高频应用的直接耦合偏置电路
    • WO2012174497A1
    • 2012-12-20
    • PCT/US2012/042837
    • 2012-06-16
    • TENSORCOM INC.THAM, KhongMengSOE, Zaw
    • THAM, KhongMengSOE, Zaw
    • H04B7/00
    • H03K3/012G05F3/16H01Q1/50H03K17/56H04B5/0075
    • This invention eliminates the need for "capacitor coupling" or "transformer coupling," and the associated undesirable parasitic capacitance and inductance associated with these coupling techniques when designing high frequency (~60GHz) circuits. At this frequency, the distance between two adjacent stages needs to be minimized. A resonant circuit in series with the power or ground leads is used to isolate a biasing signal from a high frequency signal. The introduction of this resonant circuit allows a first stage to be "directly coupled" to a next stage using a metallic trace. The "direct coupling" technique passes both the high frequency signal and the biasing voltage to the next stage. The "direct coupling" approach overcomes the large die area usage when compared to either the "AC coupling" or "transformer coupling" approach since neither capacitors nor transformers are required to transfer the high frequency signals between stages.
    • 当设计高频(〜60GHz)电路时,本发明消除了对“电容器耦合”或“变压器耦合”的需要以及与这些耦合技术相关联的不期望的寄生电容和电感。 在这个频率下,两个相邻阶段之间的距离需要最小化。 与电源或接地引线串联的谐振电路用于将偏置信号与高频信号隔离开来。 该谐振电路的引入允许使用金属迹线将第一级“直接耦合”到下一级。 “直接耦合”技术将高频信号和偏置电压都通过下一级。 与“AC耦合”或“变压器耦合”方法相比,“直接耦合”方法克服了大的管芯面积使用,因为既不需要电容器也不需要变压器来在级之间传输高频信号。
    • 10. 发明申请
    • LOW-POWER PULSED BANDGAP REFERENCE
    • 低功率脉冲带参考
    • WO2017093911A1
    • 2017-06-08
    • PCT/IB2016/057219
    • 2016-11-30
    • MARVELL WORLD TRADE LTD.
    • BARBELENET, Cedric
    • G05F3/16G05F3/20G05F3/30
    • G05F1/468G05F3/08G05F3/16G05F3/30
    • An electronic circuit (20, 24) includes a bandgap circuit (48), a capacitor (52), a switch (56) and a control circuit (60). The bandgap circuit is configured to generate a predefined reference voltage. The capacitor is coupled to an output port of the electronic circuit on which an output voltage is to be provided. The switch is connected between the bandgap circuit and the capacitor. The control circuit is configured to control the bandgap circuit and the switch so as to alternate between: first time intervals, during which the bandgap circuit is enabled and connected to the capacitor, the capacitor is charged using the reference voltage generated by the bandgap circuit, and the reference voltage is provided as the output voltage on the output port; and second time intervals, during which the bandgap circuit is disabled and disconnected from the capacitor, and the output voltage on the output port is supplied from the capacitor.
    • 电子电路20,24包括带隙电路48,电容器52,开关56和控制电路60。 带隙电路被配置为生成预定义的参考电压。 电容器被耦合到其上将提供输出电压的电子电路的输出端口。 开关连接在带隙电路和电容器之间。 控制电路被配置为控制带隙电路和开关以便在其间带隙电路被使能并连接到电容器的第一时间间隔之间交替使用由带隙电路生成的参考电压对电容器充电, 并提供参考电压作为输出端口上的输出电压; 以及第二时间间隔,在此期间禁带并断开带隙电路,并且输出端口上的输出电压由电容器提供。