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1. 发明申请

WO2009072787A2 LIGHT EMITTING DEVICE USING COMPOUND SEMICONDUCTOR 审中-公开
标题翻译：使用化合物半导体的发光装置
公开(公告)号：WO2009072787A2
公开(公告)日：2009-06-11
申请号：PCT/KR2008/007104
申请日：2008-12-02
申请人： WOOREE LST CO., LTD. , KOO, Bun-Hei , OH, Jae-Eung
发明人： KOO, Bun-Hei , OH, Jae-Eung
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/04 , H01L33/32
摘要： There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.
摘要翻译：提供了使用化合物半导体的发光器件，其可以通过使活性层中的电子和空穴的复合速率最大化来改善电特性和内部量子效率。使用化合物半导体的发光元件包括：基板; 形成在所述基板上的化合物半导体层，所述化合物半导体层包含活性层; 以及形成在有源层的顶表面和底表面中的至少一个上的电流扩散层，电流扩散层允许电子或空穴均匀地扩散到有源层中。

2. 发明申请

WO2009035218A2 GAN-BASED LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：基于GAN的发光二极管及其制造方法
公开(公告)号：WO2009035218A2
公开(公告)日：2009-03-19
申请号：PCT/KR2008/004800
申请日：2008-08-19
申请人： WOOREE LST CO., LTD. , OH, Jae-Eung
发明人： OH, Jae-Eung
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/32 , H01L2933/0091
摘要： There are provided a GaN-based light emitting diode (LED) capable of minimizing the structural defect of the GaN-based LED when a substrate is separated from the GaN-based LED and of maximizing light extraction efficiency and a method of fabricating the same. The method of fabricating the GaN-based LED may include forming a plurality of scattering inducing patterns separated from each other at uniform intervals on a substrate, growing a GaN-based semiconductor layer formed of a plurality of layers on an entire surface of the substrate including the scattering inducing patterns, removing the scattering inducing patterns to form scattering inducing grooves in the GaN-based semiconductor layer, and separating the substrate from the GaN-based semiconductor layer by a laser lift off (LLO) method in a state where the scattering inducing patterns are removed.
摘要翻译：提供了一种GaN基发光二极管（LED），其能够使GaN基LED的结构缺陷最小化，并且最大程度地提高光提取效率及其制造方法。制造GaN基LED的方法可以包括在衬底上以均匀的间隔形成彼此分离的多个散射感应图案，在基板的整个表面上生长由多层形成的GaN基半导体层，包括散射诱导图案，去除散射诱导图案以在GaN基半导体层中形成散射感应槽，并且在散射诱导的状态下通过激光剥离（LLO）方法将GaN衬底与GaN基半导体层分离图案被删除。

3. 发明申请

WO2009119951A1 LIGHT GENERATING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2009119951A1
公开(公告)日：2009-10-01
申请号：PCT/KR2008/005927
申请日：2008-10-09
申请人： WOOREE LST CO., LTD. , AHN, Do-Yeol , PARK, Seoung-Hwan , OH, Jae-Eung
发明人： AHN, Do-Yeol , PARK, Seoung-Hwan , OH, Jae-Eung
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/16
摘要： A light generating device includes a substrate, an active layer, an N-type contact layer and a P-type contact layer. The active layer is formed on the substrate. The active layer includes nitride semiconductor crystal of which crystal axis is slant with respect to the substrate. The N-type contact layer provides the active layer with electrons. The P-type contact layer is disposed opposite to the N-type contact layer with respect to the active layer. The P-type contact layer provides the active layer with holes. Therefore, the light generating device generates a polarized light. Therefore, when the light generating device is employed by a backlight assembly of a liquid crystal display apparatus, light-using efficiency may be improved. Additionally, spontaneous emission is increased to improve internal quantum efficiency, and internal field of crystal is reduced to enhance light characteristics.
摘要翻译：发光装置包括基板，有源层，N型接触层和P型接触层。有源层形成在基板上。有源层包括晶体轴相对于衬底倾斜的氮化物半导体晶体。 N型接触层为活性层提供电子。 P型接触层相对于有源层与N型接触层相对设置。 P型接触层为活性层提供孔。因此，发光装置产生偏振光。因此，当通过液晶显示装置的背光组件使用发光装置时，可以提高光的使用效率。此外，增加自发发射以提高内部量子效率，并且降低晶体的内部场域以增强光特性。

4. 发明申请

WO2009035219A3 GAN-BASED LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：WO2009035219A3
公开(公告)日：2009-03-19
申请号：PCT/KR2008/004803
申请日：2008-08-19
申请人： WOOREE LST CO., LTD. , OH, Jae-Eung
发明人： OH, Jae-Eung
IPC分类号： H01L33/00
摘要： There are provided a GaN-based light emitting diode (LED) capable of minimizing the structural defect of the GaN-based LED when a substrate is separated from the GaN-based LED and of maximizing light extraction efficiency and a method of fabricating the same. The GaN- based LED including a GaN-based semiconductor layer formed of a plurality of layers. A scattering inducing unit for scattering light generated from the GaN-based semiconductor layer is provided at the lower end of the GaN-based semiconductor layer. The scattering inducing unit may include a plurality of scattering inducing grooves formed on the lower surface of the GaN- based semiconductor layer. The plurality of scattering inducing grooves may be separated from each other by a uniform distance.

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