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1. 发明申请

WO0207191A3 SILICA ZEOLITE LOW-K DIELECTRIC THIN FILMS 审中-公开
标题翻译：二氧化硅沸石低K电介质薄膜
公开(公告)号：WO0207191A3
公开(公告)日：2002-04-18
申请号：PCT/US0121439
申请日：2001-07-06
申请人： UNIVERSTY OF CALIFORNIA , WANG HUANTING , YAN YUSHAN , WANG ZHENGBAO
发明人： YAN YUSHAN , WANG ZHENGBAO
IPC分类号： C01B37/02 , H01L21/316 , H01L21/768 , C01B39/00
CPC分类号： H01L21/02126 , C01B37/02 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02345 , H01L21/02356 , H01L21/31604 , H01L21/31695 , H01L21/76801 , H01L21/7682
摘要： Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure silica zeolites such as pure-silica MFI. The films have low k values, generally below about 2.7, ranging downwards to k values below 2.2. The films have relatively uniform pore distribution, good mechanical strength and adhesion, are relatively little affected by moisture, and are thermally stable. The films may be produced from a starting zeolite synthesis or precursor composition containing a silica source and an organic zeolite structure-directing agent such as a quaternary ammonium hydroxide. In one process the films are produced from the synthesis composition by in-situ crystallization on a substrate. In another process, the films are produced by spin-coating, either through production of a suspension of zeolite crystals followed by redispersion by in-situ crystallization or by using an excess of the alkanol produced in preparing the synthesis composition. Zeolite films having patterned surfaces may also be produced.
摘要翻译：用作半导体和其他器件中的电介质的薄膜由二氧化硅沸石，优选纯二氧化硅沸石如纯二氧化硅MFI制备。该膜具有低k值，通常低于约2.7，向下至k值低于2.2。该膜具有相对均匀的孔分布，良好的机械强度和附着力，相对较少受潮湿影响，并且是热稳定的。该膜可以由含有二氧化硅源和有机沸石结构定向剂如季铵氢氧化物的起始沸石合成或前体组合物制备。在一个过程中，通过在基底上原位结晶从合成组合物制备膜。在另一种方法中，通过旋涂生产膜，或者通过生产沸石晶体的悬浮液，然后通过原位结晶再分散或者通过使用制备合成组合物时产生的过量的链烷醇来制备。具有图案化表面的沸石膜也可以被生产。

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