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    • 2. 发明申请
    • SRAM CELL
    • WO2012012538A3
    • 2014-03-27
    • PCT/US2011044691
    • 2011-07-20
    • UNIV VIRGINIA PATENT FOUNDCALHOUN BENTON HMANN RANDY W
    • CALHOUN BENTON HMANN RANDY W
    • G11C17/00
    • H01L27/1104G11C11/412H01L21/28035H01L21/28088H01L21/28097H01L21/768Y10S257/903
    • Systems and methods of forming memory cells are described including memory cell topologies with cross-coupled inverters including substantially unidirectional gate conductors. Gate conductors for access transistors may also be provided that are substantially aligned with a long axis of the inverter gate conductor. Additionally, contacts of one inverter in a cross-coupled pair may be disposed substantially aligned with a long axis of the other inverter's gate conductor. Thus, the inverter gate conductors, access transistor gate conductors, and contacts may be formed substantially unidirectionally. Separately formed rectangular active regions may also be disposed orthogonal to the gate conductors across pull up, pull down and access transistors. The separate active regions may be formed such that active regions associated with an access transistor and/or a pull up transistor are noncontiguous with and narrower than, an active region associated with a pull down transistor of the inverter. Thus, 6T SRAM, and similar, memory cell topologies may be provided in which the major components are formed essentially from an array of rectangular lines, including unidirectional gate conductors and contacts, and unidirectional rectangular active regions crossing the gate conductors of the inverters and access transistors.
    • 描述形成存储器单元的系统和方法包括具有包括基本上单向栅极导体的交叉耦合反相器的存储单元拓扑。 还可以提供用于存取晶体管的栅极导体,其基本上与逆变器栅极导体的长轴对准。 此外,交叉耦合对中的一个逆变器的触点可以布置成与另一个逆变器的栅极导体的长轴基本对准。 因此,逆变器栅极导体,存取晶体管栅极导体和触点可以基本上单向地形成。 单独形成的矩形有源区也可以跨越上拉,下拉和接入晶体管而与栅极导体正交设置。 可以形成分离的有源区,使得与存取晶体管和/或上拉晶体管相关联的有源区域与与反相器的下拉晶体管相关联的有源区域不连续并且比其窄。 因此,可以提供6T SRAM和类似的存储单元拓扑结构,其中主要部件基本上由矩形线阵列形成,包括单向栅极导体和触点,以及与逆变器的栅极导体和通路的单向矩形有源区 晶体管。
    • 6. 发明申请
    • ENERGY HARVESTING AND CONTROL FOR SENSOR NODE
    • 传感器节能的能量采集和控制
    • WO2013123359A2
    • 2013-08-22
    • PCT/US2013026390
    • 2013-02-15
    • CALHOUN BENTON HOTIS BRIAN
    • CALHOUN BENTON HOTIS BRIAN
    • A61B5/0478
    • H02J50/12A61B5/04004A61B5/0402A61B5/0476A61B5/0488A61B2560/0214A61B2560/0219A61N1/3785A61N1/3787G05F1/613G06F1/3287H02J17/00H02J50/00Y02D10/171
    • An integrated circuit, such as included as a portion of a sensor node, can include a regulator circuit having an input coupleable to an energy harvesting transducer. The integrated circuit can include a wireless receiver circuit coupled to the regulator circuit and configured to wirelessly receive at least enough operating energy to establish operation of the sensor node without requiring the energy harvesting transducer. The integrated circuit can include a digital processor circuit coupled to the regulator circuit and a power management processor circuit. The digital processor circuit or one or more other circuits can include a subthreshold operational mode established by the power management processor circuit based on the selected energy consumption level. For example, establishing the subthreshold operational mode can include adjusting or selecting a supply voltage so as to establish subthreshold operation of a field effect transistor (FET) in the digital processor circuit or other circuits.
    • 诸如被包括为传感器节点的一部分的集成电路可以包括具有可耦合到能量收集传感器的输入的调节器电路。 集成电路可以包括耦合到调节器电路并被配置为无线地接收至少足够的操作能量以建立传感器节点的操作而无需能量采集传感器的无线接收器电路。 集成电路可以包括耦合到调节器电路的数字处理器电路和电源管理处理器电路。 数字处理器电路或一个或多个其它电路可以包括由电源管理处理器电路基于所选择的能量消耗水平建立的亚阈值操作模式。 例如,建立亚阈值操作模式可以包括调整或选择供电电压,以便在数字处理器电路或其它电路中建立场效应晶体管(FET)的亚阈值操作。