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1. 发明申请

WO2007025760A2 MELANOMA-ASSOCIATED MHC CLASS I ASSOCIATED OLIGOPEPTIDES AND THE USES THEREOF 审中-公开
标题翻译： MELANOM相关的MHC I类相关的寡肽及其用途
公开(公告)号：WO2007025760A2
公开(公告)日：2007-03-08
申请号：PCT/EP2006008533
申请日：2006-08-31
申请人： UNIV MAINZ JOHANNES GUTENBERG , EBERTS DANIELA , FATHO MARTINA , LENNERZ VOLKER , SCHMIDT CHRIS , VAN DER BRUGGEN PIERRE , WOELFEL CATHERINE , WOELFEL THOMAS
发明人： EBERTS DANIELA , FATHO MARTINA , LENNERZ VOLKER , SCHMIDT CHRIS , VAN DER BRUGGEN PIERRE , WOELFEL CATHERINE , WOELFEL THOMAS
IPC分类号： C07K14/47 , C07K16/18
CPC分类号： A61K39/0011 , A61K38/1774 , A61K2039/57 , A61K2039/572 , A61K2039/585 , C07K14/4748 , C07K16/3053
摘要： The invention relates to specific melanoma-associated oligopeptides that are identified by CD8 positive cytotoxic T lymphocytes (CTL) as peptide antigen and that induce CTL-induced lysis and/or apoptosis of tumor cells. The invention also relates to the use of said melanoma-associated oligopeptides in cancer therapy.
摘要翻译：本发明涉及某些黑素瘤相关寡肽（CTL）由CD8阳性细胞毒性T淋巴细胞识别为肽抗原和诱导肿瘤细胞的CTL诱导的裂解和/或细胞凋亡。此外，本发明涉及这些黑素瘤相关寡肽在癌症治疗中的用途。

2. 发明申请

WO2010107687A3 COMPOSITION AND METHOD OF FORMING AN INSULATING LAYER IN A PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：在光伏器件中形成绝缘层的组合物和方法
公开(公告)号：WO2010107687A3
公开(公告)日：2011-01-13
申请号：PCT/US2010027291
申请日：2010-03-15
申请人： MIASOLE , SCHMIDT CHRIS , HACHTMANN BRUCE
发明人： SCHMIDT CHRIS , HACHTMANN BRUCE
IPC分类号： H01L31/042
CPC分类号： H01L31/072 , C23C14/086 , C23C14/562 , H01L31/0322 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.
摘要翻译：太阳能电池包括位于基板上的第一电极，位于第一电极上方的至少一个p型半导体吸收体层，包含铜铟硒（CIS）基合金材料的p型半导体吸收层，n型位于p型半导体吸收体层上的半导体层，位于n型半导体层上方的绝缘铝氧化锌层，铝含量为100ppm〜5000ppm的绝缘铝氧化锌和绝缘铝上的第二电极层，第二电极是透明和导电的。铝含量为100ppm至5000ppm的绝缘铝氧化锌可以通过脉冲DC，非脉冲DC或AC溅射从铝含量为100ppm至5000ppm的铝掺杂氧化锌中沉积。

3. 发明申请

WO2010096433A2 PROTECTIVE LAYER FOR LARGE-SCALE PRODUCTION OF THIN-FILM SOLAR CELLS 审中-公开
标题翻译：用于大规模生产薄膜太阳能电池的保护层
公开(公告)号：WO2010096433A2
公开(公告)日：2010-08-26
申请号：PCT/US2010024406
申请日：2010-02-17
申请人： MIASOLE , SCHMIDT CHRIS , CORSON JOHN
发明人： SCHMIDT CHRIS , CORSON JOHN
IPC分类号： H01L31/042 , H01L31/0749
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 µm, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.
摘要翻译：一种太阳能电池，包括基板，位于基板的第一表面上方的保护层，位于基板的第二表面上方的第一电极，位于第一电极上方的至少一个p型半导体吸收层，位于该p型半导体吸收层上的半导体层，以及位于该n型半导体层上的第二电极。 p型半导体吸收层包括基于硒化铜铟（CIS）的合金材料，第二电极是透明且导电的。保护层在2μm的波长处具有大于0.25的发射率，与含硒气体的反应性低于基板的反应性，并且可以在组成，厚度，密度，发射率，电导率或应力状态。保护层的发射率分布可以是均匀的或不均匀的。

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