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1. 发明申请

WO2005015982A3 METHOD OF MAKING POLYMER DEVICE 审中-公开
标题翻译：聚合物装置的制造方法
公开(公告)号：WO2005015982A3
公开(公告)日：2005-04-28
申请号：PCT/GB2004003452
申请日：2004-08-11
申请人： UNIV CAMBRIDGE TECH , CHUA LAY-LAY , HO PETER KIAN-HOON , SIRRINGHAUS HENNING , FRIEND RICHARD HENRY
发明人： CHUA LAY-LAY , HO PETER KIAN-HOON , SIRRINGHAUS HENNING , FRIEND RICHARD HENRY
IPC分类号： B05D5/12 , H01L51/40 , A01G29/00
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , H01L51/0012 , H01L51/0028
摘要： A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.
摘要翻译：一种制造具有第一和第二电极，半导体层和介电层的晶体管的方法; 所述半导体层包含半导体聚合物并且所述介电层包含绝缘聚合物; 其特征在于所述方法包括以下步骤：（i）在第一电极上沉积含有用于形成半导体层的材料和用于形成电介质层的材料的溶液层; 和（ii）任选地固化步骤（i）中沉积的层; 其中在步骤（i）中，选择溶剂中的溶剂干燥时间，第一电极的温度和（用于形成电介质层的材料）:(溶液中用于形成半导体层的材料）的重量比，使得材料用于形成半导体层和用于形成介质层的材料通过自组织相分离，以在用于形成半导体层的材料和用于形成介质层的材料之间形成界面。

2. 发明申请

WO2005098959A3 DUAL-GATE TRANSISTORS 审中-公开
标题翻译：双门极晶体管
公开(公告)号：WO2005098959A3
公开(公告)日：2006-04-27
申请号：PCT/GB2005001309
申请日：2005-04-05
申请人： UNIV CAMBRIDGE TECH , CHUA LAY-LAY , HO PETER KIAN HOON , FRIEND RICHARD HENRY
发明人： CHUA LAY-LAY , HO PETER KIAN HOON , FRIEND RICHARD HENRY
IPC分类号： H01L51/10 , H01L27/28 , H01L29/00
CPC分类号： H01L51/0508 , H01L27/283 , H01L51/0512 , H01L51/0554
摘要： A field Effect transistor device comprising: a source electrode (13 or 14); a drain electrode (13 or 14); a semiconductive region comprising an organic semiconductor material and defining a channel (12) of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode (10 or 16) and a first dielectric region (11 or 15) located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode (10 or 16) and a second dielectric region (11 or 15) located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.
摘要翻译：场效应晶体管器件，包括：源电极（13或14）; 漏电极（13或14）; 半导体区域，包括有机半导体材料并且限定在所述源电极和所述漏电极之间的所述器件的沟道（12）; 第一栅极结构，包括位于第一栅极电极和半导体区域之间的第一栅电极（10或16）和第一介电区域（11或15）以及第二栅极结构，包括位于所述第二栅电极和所述半导体区之间的第二栅电极（10或16）和第二电介质区（11或15）由此沟道中的半导体区域的电导可以受单独施加的电位或第一栅极电极和第二栅极电极的影响。

3. 发明申请

WO2004100282A3 MANUFACTURE OF A POLYMER DEVICE 审中-公开
标题翻译：聚合物装置的制造
公开(公告)号：WO2004100282A3
公开(公告)日：2005-01-20
申请号：PCT/GB2004002078
申请日：2004-05-12
申请人： UNIV CAMBRIDGE TECH , CHUA LAY-LAY , HO PETER KIAN-HOON , FRIEND RICHARD HENRY
发明人： CHUA LAY-LAY , HO PETER KIAN-HOON , FRIEND RICHARD HENRY
IPC分类号： C07C247/16 , C07C311/37 , G03C1/695 , G03F7/004 , G03F7/008 , G03F7/012 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L51/20 , C07C247/00
CPC分类号： G03F7/0046 , C07C247/16 , C07C311/37 , G03C1/695 , G03F7/008 , G03F7/012 , H01L51/0002 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/052 , Y02E10/549 , Y02P70/521
摘要： A method of forming a polymer device including the steps of: (i) depositing on a substrate a solution comprising a polymer or oligomer and a crosslinking moiety, to form a layer; (ii) curing the layer formed in step (i) under conditions to form an insoluble crosslinked polymer; characterised in that the crosslinking moiety is present in step (i) in an amount in the range of from 0.05 to 5 mol % based on the total number of moles of repeat units of the polymer or oligomer and the crosslinking moiety in the solution.
摘要翻译：一种形成聚合物器件的方法，包括以下步骤：（i）在基底上沉积包含聚合物或低聚物和交联部分的溶液以形成层; （ii）在形成不溶性交联聚合物的条件下固化步骤（i）中形成的层; 其特征在于，相对于聚合物或低聚物的重复单元的总摩尔数和溶液中的交联部分，在步骤（i）中交联部分的存在量为0.05-5mol％。

4. 发明申请

WO2007004033A3 AN ELECTRICALLY CONDUCTIVE COMPOSITE 审中-公开
标题翻译：电导电复合材料
公开(公告)号：WO2007004033A3
公开(公告)日：2007-03-29
申请号：PCT/IB2006001829
申请日：2006-07-03
申请人： UNIV SINGAPORE , HO PETER KIAN-HOON , CHUA LAY-LAY , SIVARAMAKRISHNAN SANKARAN , CHIA PERQ-JON
发明人： HO PETER KIAN-HOON , CHUA LAY-LAY , SIVARAMAKRISHNAN SANKARAN , CHIA PERQ-JON
IPC分类号： H01B1/22 , B22F9/24 , C09C1/62 , C09C3/08 , H05K1/09
CPC分类号： H01B1/22 , H01L2924/0002 , H01L2924/00
摘要： An electrically conductive composite comprises a suspension matrix (e.g. a conductive polymer matrix) and metal nanoparticles suspended within the suspension matrix wherein the conductive composite has conductivity greater than 10 4 S cm -1 . A method for preparing metal composite nanoparticles comprises mixing a. protective monolayer material (e.g. an ?-carboxyl- or ?-hydroxyl- functionalised alkylthiol such as 11-mercapto-1-undecanol or 16-mercapto- hexadecanoic acid) with a metal salt (e.g. hydrogen tetrachloroaureate), a reducing agent (e.g. sodium borohydride) and a phase transfer agent (e.g. tetraoctylammonium bromide) and extracting protected metal nanoparticles from the mixture, wherein the protective monolayer material comprises one or more alkyl chains or aromatic moieties functionalised at one end with a group (X) capable of binding to the protected metal nanoparticles, and at the other end with a group (Y) capable of solvation in a non-organic solvent, such that the distance between X and Y is more than 10 Ångstroms.
摘要翻译：导电复合材料包括悬浮在悬浮基质中的悬浮基质（例如，导电聚合物基质）和金属纳米颗粒，其中导电复合材料具有大于10 4 S cm -1 -1 / >。制备金属复合纳米颗粒的方法包括混合a。保护性单层材料（例如α-羧基或β-羟基官能化的烷基硫醇，如11-巯基-1-十一烷醇或16-巯基 - 十六烷酸）与金属盐（例如四氯化碳酸铵），还原剂（例如钠硼氢化物）和相转移剂（例如四辛基溴化铵），并从混合物中提取受保护的金属纳米颗粒，其中保护性单层材料包含一个或多个在一端官能化的烷基链或芳族部分与能够结合并且在另一端具有能够在非有机溶剂中溶剂化的基团（Y），使得X和Y之间的距离大于10埃。

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