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1. 发明申请

WO03076954A2 HIGH RESOLUTION SCANNING MAGNETIC MICROSCOPE OPERABLE AT HIGH TEMPERATURE 审中-公开
标题翻译：高分辨率扫描磁性显微镜在高温下运行
公开(公告)号：WO03076954A2
公开(公告)日：2003-09-18
申请号：PCT/US0306973
申请日：2003-03-07
申请人： UNIV BROWN RES FOUND , XIAO GANG , SCHRAG BENAIAH D
发明人： XIAO GANG , SCHRAG BENAIAH D
IPC分类号： G01R33/09 , G01N27/72 , G01N27/82 , G01Q30/04 , G01Q60/50 , G01Q60/54 , G01R33/038 , H01L21/66 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , G01R
CPC分类号： G01Q60/50 , G01N27/82 , G01Q30/04 , G01Q60/54 , G01R33/0385
摘要： A scanning magnetic microscope (SMM) 20 includes a current source 27 for imposing an excitation current to a conductor-under-test (CUT) 70 and, if applicable, a reference current to a proximally located reference conductor 72. During accelerated testing, the SMM 20 corrects thermal drift of the CUT 70 via the reference conductor 72. A sensor 21 may be cooled by a heat sink 31 such as a pump 33 directing an airstream or a coldfinger 80. The sensor may switch from a contact to a non-contact mode of scanning the CUT 70. The SMM 20 and methods are useful for measuring electromigration in a CUT 70 as it occurs, for assembling the images into time lapsed representations such as a shape of the CUT 70, for measuring electromigration as a function of a cross sectional area of a wire under a dielectric material (DM) 78, for determining electrical parameters of the CUT 70, and for optimizing a thickness of a DM 78 over a CUT 70. The SMM 20 and methods are further useful for measuring morphological changes in a CUT 70 due to other stressing conditions, such as temperature, excitation current, physical stress(es), hostile environment, aging, semiconductor "burn-in", or irradiation.
摘要翻译：扫描磁显微镜（SMM）20包括用于向被测导体（CUT）70施加激励电流的电流源27，以及适用时向基准导体72施加参考电流。在加速测试期间， SMM20通过参考导体72校正CUT 70的热漂移。传感器21可以由诸如指示空气流或冷指针80的泵33之类的散热器31来冷却。传感器可以从触点切换到非接触式扫描CUT 70的接触模式.SMM 20和方法可用于在CUT 70发生时测量电迁移，用于将图像组装成时间过长的表示，例如CUT 70的形状，用于测量电迁移作为在电介质材料（DM）78下方的导线的横截面积，用于确定CUT 70的电参数，并优化CUT 70上的DM 78的厚度.SMM 20和方法进一步用于测量形态学由于其他应力条件，如温度，激发电流，物理应力，敌对环境，老化，半导体“老化”或照射，CUT 70会发生变化。

2. 发明申请

WO2004017102A3 SCANNING MAGNETIC MICROSCOPE HAVING IMPROVED MAGNETIC SENSOR 审中-公开
标题翻译：扫描磁性显微镜具有改进的磁传感器
公开(公告)号：WO2004017102A3
公开(公告)日：2004-04-29
申请号：PCT/US0325390
申请日：2003-08-14
申请人： UNIV BROWN RES FOUND , XIAO GANG
发明人： XIAO GANG
IPC分类号： G01R33/038 , H01J47/00 , H01J47/252
CPC分类号： G01Q60/54 , G01Q10/04 , G01Q30/04 , G01R33/0385
摘要： A scanning magnetic microscope SMM (20) includes a sensor (10) for sensing a magnetic field generated by a specimen (78), the sensor including one of a MTJ, a GMR, or an EHE sensor; translation apparatus (22A-C, 52) for translating the sensor relative to a surface of sad specimen; and a data processor (50), having an input coupled to an output of said sensor, for constructing an image of said magnetic field. The sensor preferably includes one to three sensing units each defining a sensing axis for sensing a component of a magnetic field from a specimen, the sensing units disposed such that the sensing axes are orthogonal to one another. Pluralities of such sensors can be disposed in two or three dimensional arrays. The SMM can be used for examining the current flow in ICs, electromigration, magnetic data storage media, biomagnetic systems and magnetic ink used to print currency.
摘要翻译：扫描型磁性显微镜SMM（20）包括用于感测由样本（78）产生的磁场的传感器（10），所述传感器包括MTJ，GMR或EHE传感器中的一个; 平移装置（22A-C，52），用于相对于伤心样本的表面平移传感器; 和数据处理器（50），具有耦合到所述传感器的输出的输入，用于构建所述磁场的图像。传感器优选地包括一个至三个感测单元，每个感测单元限定用于感测来自样本的磁场的分量的感测轴，感测单元布置成使得感测轴彼此正交。多个这种传感器可以布置成二维或三维阵列。 SMM可用于检查IC，电子迁移，磁性数据存储介质，生物磁性系统和用于印刷货币的磁性墨水中的电流。

3. 发明申请

WO03083910B1 REDUCTION OF NOISE, AND OPTIMIZATION OF MAGNETIC FIELD SENSITIVITY AND ELECTRICAL PROPERTIES IN MAGNETIC TUNNEL JUNCTION DEVICES 审中-公开
标题翻译：降低噪声，优化磁隧道结器件的磁场灵敏度和电学性能
公开(公告)号：WO03083910B1
公开(公告)日：2003-12-18
申请号：PCT/US0305663
申请日：2003-02-26
申请人： UNIV BROWN RES FOUND
发明人： XIAO GANG , LIU XIAOYONG
IPC分类号： H01F10/32 , H01F41/30 , H01L43/12 , H01L21/00
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3268 , H01F41/302 , H01L43/12
摘要： Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabrication of said MTJ is also disclosed wherein a series of materials are layered upon a substrate under controlled conditions, patterned and subjected to a period of annealing for simultaneously optimizing a plurality of performance parameters.
摘要翻译：本文公开了可用于感测和存储器应用并以降低的电阻，磁噪声，增加的灵敏度和增加的磁阻为特征的磁隧道结器件（MTJ）。还公开了一种用于制造所述MTJ的方法，其中在受控条件下将一系列材料层叠在衬底上，将其图案化并经历一段退火时间以同时优化多个性能参数。

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