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    • 1. 发明申请
    • NON-VOLATILE RESISTANCE SWITCHING DEVICES
    • 非易失性电阻开关器件
    • WO2015179593A1
    • 2015-11-26
    • PCT/US2015031889
    • 2015-05-21
    • TRUSTEES OF THE UNVERSITY OF PENNSYLVANIA
    • CHEN I-WEILU YANG
    • H01L47/00
    • H01L45/06H01L45/141H01L45/145H01L45/147H01L45/1625
    • The present disclosure provides, inter alia, amorphous materials useful in electronic devices such as memory devices. In some embodiments, these materials include a semiconductor having an electronegative element doped within. The present invention may b understood more readily by reference to the following detailed description taken in connection with the accompanying figures and examples, which form a part of this disclosure. It is to be understood that this invention is not limited to the specific devices, methods, applications, conditions or parameters described and/or shown herein, and that the terminology used herein is for the purpose of describing particular embodiments by way of example only and is not intended to be limiting of the claimed invention.
    • 本公开尤其提供了用于诸如存储器件的电子设备中的无定形材料。 在一些实施例中,这些材料包括掺杂有电负性元素的半导体。 通过参考形成本公开的一部分的附图和实施例的以下详细描述,本发明可以更容易理解。 应当理解,本发明不限于本文所描述和/或示出的具体设备,方法,应用,条件或参数,并且本文使用的术语仅用于通过示例的方式描述特定实施例, 不旨在限制所要求保护的发明。