专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012082198A1 DOPANT APPLICATOR SYSTEM AND METHOD OF APPLYING VAPORIZED DOPING COMPOSITIONS TO PV SOLAR WAFERS 审中-公开
标题翻译：施加剂系统及将蒸发的掺杂组合物应用于太阳能光伏太阳能的方法
公开(公告)号：WO2012082198A1
公开(公告)日：2012-06-21
申请号：PCT/US2011/051250
申请日：2011-09-12
申请人： TP SOLAR, INC. , REY GARCIA, Luis, Alejandro , RAGAY, Peter, G. , PARKS, Richard, W.
发明人： REY GARCIA, Luis, Alejandro , RAGAY, Peter, G. , PARKS, Richard, W.
IPC分类号： H01L21/00
CPC分类号： H01L31/1876 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Silicon wafer processing system, apparatus and method of doping silicon wafers with hot concentrated acid dopant compositions for forming p-n junction and back contact layers during processing into PV solar cells. Highly concentrated acid dopant is atomized with pressurized gas and heated in the range of 80 - 200°C, then introduced into a concentrated acid vapor processing chamber to apply vapor over 1.5 - 6 min. to wafers moving horizontally on a multi-lane conveyor system through the processing chamber. The wafers are dried and forwarded to a diffusion furnace. An optional UV pre-treatment assembly pre-conditions the wafers with UV radiation prior to dopant application, and doped wafers may be post-treated in a UV treatment module before being fired. The wafers may be cooled in the processing chamber. Post- firing, the wafers exhibit excellent sheet resistance in the 60 - 95Ω/sq range, and are highly uniform across the wafers and wafer-to-wafer.
摘要翻译：硅晶片处理系统，用热浓缩酸性掺杂剂组合物掺杂硅晶片的装置和方法，用于在加工成PV太阳能电池期间形成p-n结和背接触层。高浓度的酸性掺杂剂用加压气体雾化并在80-200℃的范围内加热，然后引入浓酸蒸汽处理室中以在1.5-6分钟内施加蒸气。通过处理室在多通道输送系统上水平移动的晶片。将晶片干燥并转移至扩散炉。可选的UV预处理组件在掺杂剂施加之前用UV辐射预处理晶片，并且在烧制之前可以在UV处理模块中对掺杂晶片进行后处理。晶片可以在处理室中冷却。后焙烧时，晶片在60 - 95O / sq范围内表现出优异的薄层电阻，并且在晶片和晶圆与晶圆之间具有高度均匀性。

2. 发明申请

WO2010121190A1 DIFFUSION FURNACES EMPLOYING ULTRA LOW MASS TRANSPORT SYSTEMS AND METHODS OF WAFER RAPID DIFFUSION PROCESSING 审中-公开
标题翻译：使用超低质量运输系统的扩散炉和WAFER RAPID扩散加工方法
公开(公告)号：WO2010121190A1
公开(公告)日：2010-10-21
申请号：PCT/US2010/031473
申请日：2010-04-16
申请人： TP SOLAR, INC. A CORPORATION OF CA , PARKS, Richard, W. , REY GARCIA, Luis, Alejandro , RAGAY, Peter, G.
发明人： PARKS, Richard, W. , REY GARCIA, Luis, Alejandro , RAGAY, Peter, G.
IPC分类号： H01L21/677
CPC分类号： H01L21/2254 , F27B9/20 , F27B9/243 , F27B17/0025 , F27D5/0037 , H01L21/324 , H01L21/67115 , H01L21/67173 , H01L21/67706 , H01L21/6776 , H01L31/18 , Y10S438/905 , Y10S438/907
摘要： Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling zone(s). The transport of solar cell wafers, e.g., silicon, selenium, germanium or gallium-based solar cell wafers, through the furnace is implemented by use of an ultra low- mass, wafer transport system comprising laterally spaced shielded metal bands or chains carrying non-rotating alumina tubes suspended on wires between them. The wafers rest on raised circumferential standoffs spaced laterally along the alumina tubes, which reduces contamination. The bands or chains are driven synchronously at ultra-low tension by a pin drive roller or sprocket at either the inlet or outlet end of the furnace, with appropriate tensioning systems disposed in the return path. The high intensity IR flux rapidly photo-radiation conditions the wafers so that diffusion occurs > 3X faster than conventional high-mass thermal furnaces.
摘要翻译：具有多个辐射元件（SiC）或/和高强度IR灯加热过程区域的多区域太阳能电池扩散炉，包括挡板，斜坡上升，点火，均热和冷却区域。太阳能电池晶片（例如硅，硒，锗或镓基太阳能电池晶片）通过炉子的输送通过使用超低质量晶片输送系统来实现，该超低质量晶片输送系统包括横向间隔开的屏蔽金属带或链，旋转氧化铝管悬挂在它们之间的电线上。晶片搁置在沿氧化铝管横向分开的凸起的周向支座上，这减少了污染。带或链通过销的驱动辊或链轮在炉的入口端或出口端以超低张力同步地驱动，并且适当的张紧系统设置在返回路径中。高强度IR通量快速光辐射条件使晶片发生扩散，比传统的高质量热熔炉快3倍。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式