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1. 发明申请

WO2018182967A1 ADVANCED OPTICAL SENSOR, SYSTEM, AND METHODOLOGIES FOR ETCH PROCESSING MONITORING 审中-公开
公开(公告)号：WO2018182967A1
公开(公告)日：2018-10-04
申请号：PCT/US2018/022209
申请日：2018-03-13
申请人： TOKYO ELECTRON LIMITED , TUITJE, Holger , TIAN, Xinkang , MENG, Ching-ling , VUONG, Vi , JIN, Wen , YAN, Zheng , MIHAYLOV, Mihail
发明人： TUITJE, Holger , TIAN, Xinkang , MENG, Ching-ling , VUONG, Vi , JIN, Wen , YAN, Zheng , MIHAYLOV, Mihail
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/66
摘要： An apparatus, system, and method for in-situ etching monitoring in a plasma processing chamber. The apparatus includes a continuous wave broadband light source; an illumination system configured to illuminate an area on a substrate with an incident light beam having a fixed polarization direction, the incident light beam from the broadband light source being modulated by a shutter; a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector; and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property value from the processed light, and control an etch process based on the determined property value.

2. 发明申请

WO2007103302A2 WEIGHTING FUNCTION OF ENHANCE MEASURED DIFFRACTION SIGNALS IN OPTICAL METROLOGY 审中-公开
标题翻译：光学计量学中加权偏差信号的加权函数
公开(公告)号：WO2007103302A2
公开(公告)日：2007-09-13
申请号：PCT/US2007/005573
申请日：2007-03-05
申请人： TOKYO ELECTRON LIMITED , VUONG, Vi , BAO, Junwei , LI, Shifang , CHEN, Yan
发明人： VUONG, Vi , BAO, Junwei , LI, Shifang , CHEN, Yan
IPC分类号： G01B11/14
CPC分类号： G01B11/24
摘要： A weighting function is obtained to enhance measured diffraction signals used in optical metrology. To obtain the weighting function, a measured diffraction signal is obtained. The measured diffraction signal was measured from a site on a wafer using a photometric device. A first weighting function is defined based on noise that exists in the measured diffraction signal. A second weighting function is defined based on accuracy of the measured diffraction signal. A third weighting function is defined based on sensitivity of the measured diffraction signal. A fourth weighting function is defined based on one or more of the first, second, and third weighting functions.
摘要翻译：获得加权函数以增强在光学计量学中使用的测量的衍射信号。为了获得加权函数，获得测量的衍射信号。使用光度测量装置从晶片上的位置测量测量的衍射信号。基于存在于测量的衍射信号中的噪声来定义第一加权函数。基于测量的衍射信号的精度来定义第二加权函数。基于测量的衍射信号的灵敏度来定义第三加权函数。基于第一，第二和第三加权函数中的一个或多个来定义第四加权函数。

3. 发明申请

WO2007123696A3 IN-DIE OPTICAL METROLOGY 审中-公开
公开(公告)号：WO2007123696A3
公开(公告)日：2007-11-01
申请号：PCT/US2007/007932
申请日：2007-03-29
申请人： TOKYO ELECTRON LIMITED , LI, Shifang , BAO, Junwei , VUONG, Vi
发明人： LI, Shifang , BAO, Junwei , VUONG, Vi
IPC分类号： G01N21/86 , G01V8/00
摘要： To determine one or more features of an in-die structure on a semiconductor wafer, a correlation is determined between one or more features of a test structure to be formed on a test pad and one or more features of a corresponding in-die structure. A measured diffraction signal measured off the test structure is obtained. One or more features of the test structure are determined using the measured diffraction signal. The one or more features of the in-die structure are determined based on the one or more determined features of the test structure and the determined correlation.

4. 发明申请

WO2007092229A2 TRANSFORMING METROLOGY DATA FROM A SEMICONDUCTOR TREATMENT SYSTEM USING MULTIVARIATE ANALYSIS 审中-公开
标题翻译：使用多重分析从半导体处理系统转换计量数据
公开(公告)号：WO2007092229A2
公开(公告)日：2007-08-16
申请号：PCT/US2007/002665
申请日：2007-01-30
申请人： TOKYO ELECTRON LIMITED , VUONG, Vi , BAO, Junwei , CHEN, Yan , HEIKO, Weichert , EGRET, Sebastien
发明人： VUONG, Vi , BAO, Junwei , CHEN, Yan , HEIKO, Weichert , EGRET, Sebastien
CPC分类号： G01N21/4788 , G01N21/211 , G01N2021/215
摘要： Metrology data from a semiconductor treatment system is transformed using multivariate analysis. In particular, a set of metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. One or more essential variables for the obtained set of metrology data is determined using multivariate analysis. A first metrology data measured or simulated for one or more substrates treated using the treatment system is obtained. The first obtained metrology data is not one of the metrology data in the set of metrology data earlier obtained. The first metrology data is transformed into a second metrology data using the one or more of the determined essential variables.
摘要翻译：来自半导体处理系统的测量数据使用多变量分析进行转换。特别地，获得了对使用该处理系统处理的一个或多个基底测量或模拟的一组度量数据。使用多变量分析确定获得的度量数据集的一个或多个基本变量。获得用于使用处理系统处理的一个或多个基底测量或模拟的第一测量数据。获得的第一个测量数据不是之前获得的测量数据集中的度量数据之一。使用所确定的一个或多个基本变量将第一计量数据转换成第二计量数据。

5. 发明申请

WO2021034842A1 SYNTHETIC WAVELENGTHS FOR ENDPOINT DETECTION IN PLASMA ETCHING 审中-公开
公开(公告)号：WO2021034842A1
公开(公告)日：2021-02-25
申请号：PCT/US2020/046822
申请日：2020-08-18
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： CHEN, Yan , TIAN, Xinkang , VUONG, Vi
IPC分类号： H01J37/32 , H05H1/00 , H01L21/66
摘要： Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. OES data is acquired by a spectrometer in a plasma etch processing chamber. The acquired time -evolving spectral data is first filtered and de-meaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. Grouping of the principal components weights into two separate groups corresponding to positive and negative natural wavelengths, creates separate signed trends (synthetic wavelengths).

6. 发明申请

WO2004013568A2 METROLOGY HARDWARE ADAPTATION WITH UNIVERSAL LIBRARY 审中-公开
标题翻译：用通用库的计量硬件适应
公开(公告)号：WO2004013568A2
公开(公告)日：2004-02-12
申请号：PCT/US2003/024916
申请日：2003-08-06
申请人： TIMBRE TECHNOLOGIES, INC. , DREGE, Emmanuel , BAO, Junwei , DODDI, Srinivas , VUONG, Vi
发明人： DREGE, Emmanuel , BAO, Junwei , DODDI, Srinivas , VUONG, Vi
IPC分类号： G01B
CPC分类号： G03F7/70516 , G01N21/956 , G03F7/70625
摘要： To generate sets of coefficients for use in optical metrology of semiconductor structures, at least three optical metrology signals for a set of parameters are obtained. The optical metrology signals are indicative of light diffracted from a semiconductor structure, and a value of at least one parameter of the set of parameters is varied to produce each signal. Functional relationships between the at least three optical metrology signals are obtained, the functional relationships including at least three coefficient values. At least three sets of coefficients from the at least three coefficient values of the functional relationships are determined.
摘要翻译：为了生成用于半导体结构的光学计量的系数集合，获得用于一组参数的至少三个光学计量信号。光学计量信号指示从半导体结构衍射的光，并且该组参数中的至少一个参数的值被改变以产生每个信号。获得所述至少三个光学度量信号之间的函数关系，所述函数关系包括至少三个系数值。确定来自功能关系的至少三个系数值的至少三组系数。

7. 发明申请

WO2017087378A1 ADVANCED OPTICAL SENSOR AND METHOD FOR PLASMA CHAMBER 审中-公开
标题翻译：先进的光学传感器及等离子体室的方法
公开(公告)号：WO2017087378A1
公开(公告)日：2017-05-26
申请号：PCT/US2016/062017
申请日：2016-11-15
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： MIHAYLOV, Mihail , TIAN, Xinkang , MENG, Ching-Ling , FERNS, Jason , NG, Joel , HYATT, Badru D. , YAN, Zheng , VUONG, Vi
IPC分类号： G01J1/42 , G01J1/04 , H04N5/372 , C23C14/58
CPC分类号： H01J37/32917 , G01J1/42 , G01J1/46 , G01J3/28 , G01J3/2803 , G01J3/443 , G01J2001/4247 , H01J37/32944 , H01J37/32972
摘要： An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission signal in a plasma processing chamber. The at least one detected light emission signal including light emissions from an optical event. The method further includes processing the at least one light emission signal and detecting a signature of the optical event from the processed light emission signal.
摘要翻译：用于检测等离子体处理系统中的光学事件的先进的光学传感器和方法该方法包括检测等离子体处理室中的至少一个发光信号。该至少一个检测到的发光信号包括来自光学事件的光发射。该方法进一步包括处理至少一个发光信号并从处理的发光信号中检测光学事件的标记。

8. 发明申请

WO2014062886A1 PLASMA ETCHING ENDPOINT DETECTION USING MULTIVARIATE ANALYSIS 审中-公开
标题翻译：使用多重分析的等离子体蚀刻端点检测
公开(公告)号：WO2014062886A1
公开(公告)日：2014-04-24
申请号：PCT/US2013/065378
申请日：2013-10-17
申请人： TOKYO ELECTRON LIMITED , TOKYO ELECTRON U.S. HOLDINGS, INC.
发明人： CHEN, Yan , KOMAROV, Serguei , VUONG, Vi
IPC分类号： C23F1/00 , H01J37/32 , H05H1/00
CPC分类号： H01L22/26 , G06F17/16 , H01J37/32963 , H01L21/3065 , H01L21/67069
摘要： Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.
摘要翻译：公开了一种使用光发射光谱（OES）数据作为输入来确定蚀刻工艺的端点的方法。光发射光谱（OES）数据通过附着在等离子体蚀刻处理工具上的光谱仪获得。首先将所获取的时间演变的光谱数据进行滤波并分析，然后使用多元分析（如主成分分析）将其转换为变换的光谱数据或趋势，其中先前计算的主成分权重用于完成变换。可以使用包含多个趋势的功能形式来更准确地确定蚀刻工艺的终点。公开了一种基于从先前蚀刻处理收集的OES数据计算实际蚀刻之前的主要分量权重的方法，该方法有助于快速计算涉及多个趋势的趋势和功能形式，以有效和准确地在线确定蚀刻过程端点。

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