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    • 4. 发明申请
    • THIN FILM FIELD EFFECT TRANSISTORS HAVING SCHOTTKY GATE-CHANNEL JUNCTIONS
    • 具有肖特基通道通道的薄膜场效应晶体管
    • WO2006099744A1
    • 2006-09-28
    • PCT/CA2006/000445
    • 2006-03-24
    • THE UNIVERSITY OF BRITISH COLUMBIATAKSHI, ArashMADDEN, John
    • TAKSHI, ArashMADDEN, John
    • H01L29/47H01L51/10H01L29/786H01L29/772
    • H01L51/0508H01L29/812
    • An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.
    • 有源电子器件具有用半导体层形成欧姆导体的漏极和源极。 半导体层可以是有机或非晶半导体的薄层。 漏极和源电极位于半导体层的第一面上,在沟道的任一侧间隔开。 器件在与沟道相邻的半导体层的第二面上具有栅电极。 栅电极与半导体形成肖特基接触,以在沟道中产生耗尽区。 栅电极可以封装通道,使得通道被保护以免与氧气,水分子或环境中的其它材料接触。 在一些实施例中,器件具有通过绝缘层与半导体层分离的附加栅电极。 这样的实施例组合OFET和MESFET的特征。