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1. 发明申请

WO2007018495A2 METHOD FOR CONTROLLING DISLOCATION POSITIONS IN SILICON GERMANIUM BUFFER LAYERS 审中-公开
标题翻译：控制硅锗缓冲层位错位置的方法
公开(公告)号：WO2007018495A2
公开(公告)日：2007-02-15
申请号：PCT/US2005/026364
申请日：2005-07-25
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , XIE, Ya-Hong , YOON, Tae-Sik
发明人： XIE, Ya-Hong , YOON, Tae-Sik
IPC分类号： H01L21/322
CPC分类号： H01L29/1054 , B82Y10/00 , H01L21/26506 , H01L21/26533 , H01L21/266 , H01L2924/0002 , H01L2924/00
摘要： A method for controlling dislocation position in a silicon germanium buffer layer located on a substrate includes depositing a strained silicon germanium layer on the substrate and irradiating one or more regions of the silicon germanium layer with a dislocation inducing agent. The dislocation inducing agent may include ions, electrons, or other radiation source. Dislocations in the silicon germanium layer are located in one or more of the regions. The substrate and strained silicon germanium layer may then be subjected to an annealing process to transform the strained silicon germanium layer into a relaxed state. A top layer of strained silicon or silicon germanium may be deposited on the relaxed silicon germanium layer. Semiconductor-based devices may then be fabricated in the non-damaged regions of the strained silicon or silicon germanium layer. Threading dislocations are confined to damaged areas which may be transformed into SiO 2 isolation regions.
摘要翻译：用于控制位于衬底上的硅锗缓冲层中的位错位置的方法包括在衬底上沉积应变硅锗层并且用位错诱导剂照射硅锗层的一个或多个区域。位错诱导剂可以包括离子，电子或其他辐射源。硅锗层中的位错位于一个或多个区域中。然后可以对衬底和应变硅锗层进行退火处理以将应变硅锗层转化为松弛状态。应变硅或硅锗的顶层可以沉积在松弛硅锗层上。然后可以在应变硅或硅锗层的未受损区域中制造基于半导体的器件。线位错局限于可能转变成SiO 2隔离区的受损区域。

2. 发明申请

WO2007029987A1 MOLD FOR INJECTION MOLDING 审中-公开
标题翻译：注塑模具
公开(公告)号：WO2007029987A1
公开(公告)日：2007-03-15
申请号：PCT/KR2006/003590
申请日：2006-09-08
申请人： BESTNER INC. , YOON, Tae-Sik
发明人： YOON, Tae-Sik
IPC分类号： B29C45/26
CPC分类号： B29C45/4421 , B29C33/301
摘要： According to the present invention, there is provided with a mold for injection molding comprising a first mold having a concave first molding surface; and a second mold having a convex second molding surface, the second mold being arranged to be spaced from the first mold for a cavity to be defined between the first and second molding surfaces. At this time, the second mold includes a plurality of unit molds coupled with and disassembled from each other, and protrusions of a predetermined shape are formed on the second molding surface. Therefore, a hemispherical molded product can be easily removed from the mold when injection molding the molded product with protrusions of a predetermined shape formed on an inner surface thereof.
摘要翻译：根据本发明，提供了一种用于注塑的模具，包括具有凹形第一模制表面的第一模具; 以及具有凸形的第二成型表面的第二模具，所述第二模具被布置成与所述第一模具间隔开以形成在第一和第二模制表面之间的空腔。此时，第二模具包括多个单元模具，它们彼此联接和拆卸，并且在第二模制表面上形成预定形状的凸起。因此，当在其内表面上形成具有预定形状的突起的模制产品注射成型时，可以容易地从模具中移除半球状模制产品。

3. 发明申请

WO2004074173A1 METHOD OF FORMING QUANTUM LAYER AND PATTERNED STRUCTURE BY MULTIPLE DIP-COATING PROCESS 审中-公开
标题翻译：通过多种DIP涂层工艺形成量子层和形态结构的方法
公开(公告)号：WO2004074173A1
公开(公告)日：2004-09-02
申请号：PCT/KR2004/000350
申请日：2004-02-20
申请人： SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION , KIM, Ki-Bum , YOON, Tae-Sik
发明人： KIM, Ki-Bum , YOON, Tae-Sik
IPC分类号： B82B3/00
CPC分类号： B82Y30/00 , H01L21/02
摘要： The present invention relates to a method of adsorbing quantum dots in a colloid solution on a substrate using a multiple dip-coating process to increase the surface area coverage of quantum dots on the substrate to a level of single layer. Further, this invention relates to a method of forming a uniform pattern of quantum dot clusters on a substrate.
摘要翻译：本发明涉及使用多次浸涂法将基板上的胶体溶液中的量子点吸附在基板上的方法，以将基板上量子点的表面积覆盖率提高至单层。此外，本发明涉及在基板上形成量子点簇的均匀图案的方法。

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