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1. 发明申请

WO2010025408A2 BONE-DERIVED INTERSPINOUS SPACER 审中-公开
标题翻译：骨衍生的间质间隔物
公开(公告)号：WO2010025408A2
公开(公告)日：2010-03-04
申请号：PCT/US2009055428
申请日：2009-08-28
申请人： SYNTHES USA LLC , SYNTHES GMBH , ASCHMANN FELIX , COPPES JUSTIN , DELURIO ROBERT , BARRALL BENJAMIN , CHOW DAVID , ANGERT NICHOLAS
发明人： ASCHMANN FELIX , COPPES JUSTIN , DELURIO ROBERT , BARRALL BENJAMIN , CHOW DAVID , ANGERT NICHOLAS
IPC分类号： A61B17/70
CPC分类号： A61B17/7065
摘要： An allograft interspinous spacer for implantation into an interspinous space located between spinous process of adjacent vertebrae. The spacer preferably includes a body, a core and a plurality of dep lovable retainers. The body may be operatively associated with the plurality of deployable retainers. In use, after the body has been inserted into the interspinous space, the plurality of retainers is deployed so that they prevent migration of the spacer. The core is preferably sized and configured to be inserted and/or moved into operatively engagement with the body to deploy the plurality of retainers.
摘要翻译：用于植入位于相邻椎骨的棘突之间的椎间间隙的同种异体移植椎间间隔物。间隔件优选地包括主体，芯体和多个可爱的保持器。主体可以与多个可展开保持器可操作地关联。在使用中，在身体插入椎间空间之后，多个保持器被展开以防止间隔物的移动。芯部的尺寸和构造优选地被设计成插入和/或移动成与本体可操作地接合以展开多个保持器。

2. 发明申请

WO2012006627A4 FACET FUSION IMPLANT 审中-公开
公开(公告)号：WO2012006627A4
公开(公告)日：2012-02-23
申请号：PCT/US2011043579
申请日：2011-07-11
申请人： SYNTHES USA LLC , SYNTHES GMBH , ANGERT NICKOLAS , BARRALL BENJAMIN , CHOW DAVID , COPPES JUSTIN , PIETRUSZYNSKI LAUREN
发明人： ANGERT NICKOLAS , BARRALL BENJAMIN , CHOW DAVID , COPPES JUSTIN , PIETRUSZYNSKI LAUREN
IPC分类号： A61B17/00 , A61B17/17 , A61B17/70 , A61F2/44
CPC分类号： A61B17/7064 , A61B17/1671 , A61B17/1757 , A61B17/3472 , A61B17/864 , A61B17/8872 , A61B17/92
摘要： Facet fusion implants with various body geometries are provided. The bodies of the facet fusion implants can be configured to minimize migration of the implants when the implants are inserted into facet joints. Surgical methods and accompanying surgical instrumentation for inserting the facet fusion implants into facet joints are provided.
摘要翻译：提供了具有各种身体几何形状的面融合植入物。小面融合植入物的主体可以被配置为当将植入物插入小关节时使植入物的迁移最小化。提供了将小面融合植入物插入小关节的手术方法和伴随的手术器械。

3. 发明申请

WO2007089905A3 INTERSPINOUS PROCESS SPACER 审中-公开
公开(公告)号：WO2007089905A3
公开(公告)日：2007-10-04
申请号：PCT/US2007002791
申请日：2007-01-31
申请人： SYNTHES USA , SYNTHES GMBH , JACKSON BENJAMIN L , CHOW DAVID , DELURIO ROBERT J
发明人： JACKSON BENJAMIN L , CHOW DAVID , DELURIO ROBERT J
IPC分类号： A61B17/70 , A61F2/44
CPC分类号： A61B17/7062 , A61B2017/0256
摘要： An interspinous process spacer (100) is generally rectangular and may have an upper face (106) that generally opposes a lower face (105), front and back sides (104,103) that generally oppose each other, an end side, and a nose (110) that generally opposes the end side. The spacer preferably has rounded edges between the upper face and the front, end, and back sides and between the lower face and the front, end, and back sides. The nose of the spacer is preferably asymmetrical and tapers integrally, distally, and inwardly from the first and second faces to form a generally pointed or rounded distal tip. A spacer may be inserted laterally into the interspinous space through a small, posterior midline incision, allowing the preservation of the supraspinous ligament.
摘要翻译：棘突间间隔物（100）通常是矩形的并且可以具有通常与下表面（105），通常彼此相对的前侧和后侧（104,103）相对的上表面（106），端面和鼻部 110）通常反对终端。间隔件优选地在上表面与前端，端部和后侧之间以及下表面与前端，端侧和后侧之间具有圆形边缘。间隔件的鼻部优选地是不对称的并且从第一和第二表面一体地，远端地和向内逐渐变细，以形成大致尖的或圆形的远侧末端。间隔物可以通过小的后中线切口横向插入椎间盘间隙，允许保留上棘韧带。

4. 发明申请

WO2006044920A3 ADJUSTABLE INSTRUMENTATION FOR SPINAL IMPLANT INSERTION 审中-公开
标题翻译：用于脊柱植入物的可调节仪器
公开(公告)号：WO2006044920A3
公开(公告)日：2006-12-21
申请号：PCT/US2005037493
申请日：2005-10-19
申请人： OSTEOTECH INC , MARTZ ERIK O , LIN JO-WEN , CHOW DAVID , ROSENTHAL DANIEL
发明人： MARTZ ERIK O , LIN JO-WEN , CHOW DAVID , ROSENTHAL DANIEL
IPC分类号： A61F2/46 , A61B17/16 , A61B17/28 , A61B17/88
CPC分类号： A61F2/4611 , A61B17/1604 , A61B17/1606 , A61B17/1659 , A61B17/1671 , A61B17/320016 , A61B90/50 , A61B2017/00261 , A61B2017/00464 , A61B2017/0256 , A61B2017/2904 , A61B2017/2931 , A61F2/442 , A61F2/4455 , A61F2002/30538 , A61F2002/30795 , A61F2002/4624 , A61F2002/4627 , A61F2002/4628 , A61F2002/4629 , A61F2002/4679 , A61F2250/0006
摘要： A plurality of differently configured bone spinal implants for insertion in a spine have a cylindrical bore for receiving an insertion head stud. A plurality of instruments are disclosed each of which have a first connection element which is either a male or female member such as e.g., a ball and socket, a cylinder and socket and so on for forming either a stationary or articulating interchangeable joint for a plurality of disc processing heads or implant insertion heads. The plurality of disc space processing heads or implant insertion heads have a complementary second joint member for interchangeable attachment to the first connection element. The implant insertion heads or disc processing heads have different configurations for different shaped implants. Different instrument insertion or disc processing heads such as implant inserters, impactors, rasps, distractors, curettes, rongeur, and so on are disclosed as being interchangeable with a common instrument in which articulating or fixed joints are provided the interchangeable heads.
摘要翻译：用于插入脊椎的多个不同构造的骨脊椎植入物具有用于接收插入头钉的圆柱形孔。公开了多个仪器，每个仪器具有第一连接元件，该第一连接元件是阳或阴构件，例如球窝，气缸和插座等，用于形成用于多个的静止或关节可互换接头的盘处理头或植入物插入头。多个盘空间处理头或植入物插入头具有用于可互换连接到第一连接元件的互补的第二关节构件。植入物插入头或椎间盘处理头具有不同形状的植入物的不同构型。公开了不同的仪器插入或盘处理头，例如植入物插入器，冲击器，锉刀，牵引器，刮刀，护腿等，其可与可互换的头部提供关节或固定接头的通用仪器互换。

5. 发明申请

WO03052832A2 LOW BASE-EMITTER VOLTAGE HETEROJUNCTION BIPOLAR TRASISTOR 审中-公开
标题翻译：低基站电压异常双极性探测器
公开(公告)号：WO03052832A2
公开(公告)日：2003-06-26
申请号：PCT/US0240543
申请日：2002-12-18
申请人： HRL LAB LLC , CHOW DAVID , ELLIOTT KENNETH , NGUYEN CHANH
发明人： CHOW DAVID , ELLIOTT KENNETH , NGUYEN CHANH
IPC分类号： H01L29/737
CPC分类号： H01L29/7371
摘要： A heterojunction bipolar transistor is presented, comprising a substrate having formed thereon a heterojunction bipolar transistor layer structure, and including an emitter layer. The emitter layer includes a strained, n−doped compound of indium arsenic and phosphorus. The transistor further comprises, between the substrate and emitter layer, a subcollector layer, a collector layer, a base layer, and an optional spacer layer. The emitter layer may include a graded portion. A contact layer is formed on the emitter layer to provide contacts for the device.
摘要翻译：提出了一种异质结双极晶体管，其包括在其上形成有异质结双极晶体管层结构并且包括发射极层的衬底。发射极层包括铟砷和磷的应变的n掺杂化合物。晶体管还包括在衬底和发射极层之间的子集电极层，集电极层，基极层和可选的间隔层。发射极层可以包括渐变部分。在发射极层上形成接触层以提供器件的触点。

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