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1. 发明申请

WO0169602A3 FERROELECTRIC MEMORY AND METHOD OF OPERATING SAME 审中-公开
标题翻译：电磁存储器及其操作方法
公开(公告)号：WO0169602A3
公开(公告)日：2002-02-21
申请号：PCT/US0105622
申请日：2001-02-22
申请人： SYMETRIX CORP
发明人： CHEN ZHENG , JOSHI VIKRAM , LIM MYOUNGHO , PAZ DE ARAUJO CARLOS A , MCMILLAN LARRY D
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric non-volatile memory (100, 436) comprising: a plurality of memory cells (14, 116, 117, 118, 119), each containing an FeFET (40, 140A) and a MOSFET (20, 120A), each of said FeFETs (14) having a source (42), a drain (44), a substrate (45), and a gate (58), and each MOSFET (20) having a pair of source/drains (22, 23) and a gate (21). The cells are arranged in an array comprising a plurality of rows (180) and a plurality of columns (184). A gate line (132) and a bit line (134) are associated with each column, and a word line (136), a drain line (139), and a substrate line (138) are associated with each row. A read MOSFET (160) is connected between a drain input (137) and the drain line associated with each row. The gate (165) of the read MOSFET is connected to an input for the read enable signal.
摘要翻译：一种铁电非易失性存储器（100,436），包括：多个存储单元（14,116,117,118,119），每个存储单元包含FeFET（40,140A）和MOSFET（20,120A），每个所述FeFET（14）具有源极（42），漏极（44），衬底（45）和栅极（58），并且每个MOSFET（20）具有一对源极/漏极（22,23）和一个门（21）。电池被布置成包括多个行（180）和多个列（184）的阵列。栅极线（132）和位线（134）与每列相关联，并且字线（136），漏极线（139）和衬底线（138）与每一行相关联。读取MOSFET（160）连接在漏极输入（137）和与每行相关联的漏极线之间。读取MOSFET的栅极（165）连接到用于读使能信号的输入端。

2. 发明申请

WO0225667A2 FERROELECTRIC MEMORY AND METHOD OF OPERATING SAME 审中-公开
标题翻译：铁电存储器及其操作方法
公开(公告)号：WO0225667A2
公开(公告)日：2002-03-28
申请号：PCT/US0142288
申请日：2001-09-25
申请人： SYMETRIX CORP , MATSUSHITA ELECTRIC IND CO LTD , CHEN ZHENG , KATO YOSHIHISA , JOSHI VIKRAM , LIM MYOUNGHO , PAZ DE ARAUJO CARLOS A , MCMILLAN LARRY D , SHIMADA YASUHIRO , OTSUKI TATSUO
发明人： CHEN ZHENG , KATO YOSHIHISA , JOSHI VIKRAM , LIM MYOUNGHO , PAZ DE ARAUJO CARLOS A , MCMILLAN LARRY D , SHIMADA YASUHIRO , OTSUKI TATSUO
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： A ferroelectric memory 636 includes a group of memory cells (645, 12, 201, 301, 401, 501), each cell having a ferroelectric memory element (44, 218, etc.), a drive line (122, 322, 422, 522 etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (25, 49, 125, 325, 425, 525, etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (20, 42, 120, 320, 420, etc.) between the memory cells and the bit line, a set switch (14, 114, 314, 414, 514, etc.) connected between the drive line and the memory cells, and a reset switch (16, 116, 316, 416, 516, etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.
摘要翻译：铁电存储器636包括一组存储单元（645,12,201,301,401,501），每个单元具有铁电存储元件（44,218等），驱动线（122,322,422等） 522等），在其上放置用于向该组存储器单元写入信息的电压;位线（25,49,125,325,425,525等），在该位线上将要从其中读出信息存储器单元被放置在存储器单元与位线之间的前置放大器（20,42,120,320,420等），连接在存储器单元与位线之间的置位开关（14,114,314,414,514等）驱动线和存储器单元，以及与前置放大器并联连接到存储器单元的复位开关（16,116,316,416,516等）。通过在存储元件上放置比铁电存储元件的矫顽电压小的电压来读取存储器。在读取之前，通过使铁电存储器元件的两个电极接地来放电来自电池组的噪声。

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