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1. 发明申请

WO2016191371A1 METHODS FOR REMOVING NUCLEI FORMED DURING EPITAXIAL GROWTH 审中-公开
标题翻译：在外源性生长期间去除核形成的方法
公开(公告)号：WO2016191371A1
公开(公告)日：2016-12-01
申请号：PCT/US2016/033783
申请日：2016-05-23
申请人： STRATIO, INC. , STRATIO
发明人： LEE, Jae Hyung , NA, Yeul , KIM, Youngsik , JUNG, Woo-shik
IPC分类号： H01L21/02 , H01L21/308
CPC分类号： H01L21/3081 , H01L21/02057 , H01L21/02082 , H01L21/02636 , H01L21/30604
摘要： A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
摘要翻译：一种用于去除在选择性外延生长工艺过程中形成的核的方法包括用一个或多个掩模层在衬底上外延生长第一组一个或多个半导体结构。在一个或多个掩模层上形成第二组多个半导体结构。该方法还包括在一个或多个半导体结构的第一组上形成一个或多个保护层。多个半导体结构的第二组的至少一个子集从一个或多个保护层露出。该方法还包括：在一个或多个半导体结构的第一组上形成一个或多个保护层之后，至少蚀刻多个半导体结构的第二组的子集。

2. 发明申请

WO2016100373A1 REDUCTION OF SURFACE ROUGHNESS IN EPITAXIALLY GROWN GERMANIUM BY CONTROLLED THERMAL OXIDATION 审中-公开
标题翻译：通过控制热氧化还原外源性锗原子表面粗糙度
公开(公告)号：WO2016100373A1
公开(公告)日：2016-06-23
申请号：PCT/US2015/065869
申请日：2015-12-15
申请人： STRATIO, INC.
发明人： JUNG, Woo-shik , NA, Yeul , KIM, Youngsik , LEE, Jae, Hyung , LEE, Jin, Hyung
IPC分类号： H01L21/02
CPC分类号： H01L21/02236 , H01L21/02255 , H01L21/02381 , H01L21/02532 , H01L21/02664 , H01L21/26513 , H01L21/302 , H01L21/30604 , H01L21/31111 , H01L21/3247
摘要： Methods for reducing surface roughness of germanium are described herein. In some embodiments, the surface roughness is reduced by thermal oxidation of germanium. In some embodiments, the surface roughness is further reduced by controlling a rate of the thermal oxidation. In some embodiments, the surface roughness is reduced by thermal annealing.
摘要翻译：本文描述了降低锗表面粗糙度的方法。在一些实施例中，通过锗的热氧化来减少表面粗糙度。在一些实施方案中，通过控制热氧化的速率进一步降低表面粗糙度。在一些实施例中，通过热退火来降低表面粗糙度。

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